公开(公告)号：US20240186458A1

公开(公告)日：2024-06-06

申请号：US18413013

申请日：2024-01-15

Applicant: Applied Materials, Inc.

Inventor： Kai Ding ,  Lisong Xu ,  Mingwei Zhu ,  Zhiyong Li ,  Hou T. Ng ,  Sivapackia Ganapathiappan ,  Nag Patibandla

IPC: H01L33/46 ,  H01L25/16

CPC classification number: H01L33/46 ,  H01L25/167 ,  H01L2933/0025

Abstract: Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using multiple layers in a distributed Bragg reflector configuration. This reflective coating may be formed during the LED fabrication process before the micro-LED structure is coupled to the backplane. The pixel isolation structures on the backplane may also include a reflective coating that is applied above the LED epilayers.

公开(公告)号：US20240097081A1

公开(公告)日：2024-03-21

申请号：US18468091

申请日：2023-09-15

Applicant: Applied Materials, Inc.

Inventor： Jiacheng Fan ,  Zhiyong Li

IPC: H01L33/50

CPC classification number: H01L33/502

Abstract: Embodiments of the present technology include pixel structures. The pixel structures include a light emitting diode structure to generate ultraviolet light. The pixel structures further include a photoluminescent region containing a photoluminescent material. The pixel structures additionally include a first bandpass filter positioned between the light emitting diode structure and the photoluminescent region, where the first bandpass filter is operable to transmit greater than 50% of light having a wavelength less than or about 400 nm. The pixel structures yet additionally include a second bandpass filter positioned on an opposite side of the photoluminescent region as the first bandpass filter, where the second bandpass filter is operable to transmit greater than 50% of light having a wavelength greater than 400 nm.

公开(公告)号：US20230290909A1

公开(公告)日：2023-09-14

申请号：US18182856

申请日：2023-03-13

Applicant: Applied Materials, Inc.

Inventor： Zhiyong Li ,  Mingwei Zhu ,  Hou T. Ng ,  Nag Patibandla ,  Lisong Xu ,  Kai Ding ,  Sivapackia Ganapathiappan

IPC: H01L33/50 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/502 ,  H01L33/005 ,  H01L25/0753 ,  H01L2933/0041

Abstract: Exemplary pixel structures are described that include a first light emitting diode structure, operable to generate blue light characterized by a peak emission wavelength of greater than or about 450 nm, and a second light emitting diode structure positioned on the first light emitting diode structure. The second light emitting diode structure is operable to generate ultraviolet light characterized by a peak emission wavelength of less than or about 380 nm. The pixel structures may also include a photoluminescent region, containing a photoluminescent material, that is positioned on the second light emitting diode structure.

公开(公告)号：US20240096854A1

公开(公告)日：2024-03-21

申请号：US18244466

申请日：2023-09-11

Applicant: Applied Materials, Inc.

Inventor： Zhiyong Li ,  Sivapackia Ganapathiappan ,  Kulandaivelu Sivanandan ,  Hao Yu ,  Hou T. Ng ,  Nag Patibandla ,  Mingwei Zhu ,  Lisong Xu ,  Kai Ding

IPC: H01L25/075

CPC classification number: H01L25/0753 ,  H01L33/56

Abstract: Processing methods are described that include forming a group of LED structures on a substrate layer to form a patterned LED substrate. The methods also include depositing a light absorption material on the pattered LED substrate, where the light absorption material includes at least one photocurable compound and at least one ultraviolet light absorbing material. The methods further include exposing a portion of the light absorption material to patterned light, wherein the patterned light cures the exposed portion of the light absorption material into pixel isolation structures. The methods additionally include depositing an isotropic layer on a top portion and a side portion of the pixel isolation structures, where the LED structures are substantially free of the as-deposited isotropic light reflecting layer.

公开(公告)号：US20230343904A1

公开(公告)日：2023-10-26

申请号：US18305852

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Kai Ding ,  Lisong Xu ,  Mingwei Zhu ,  Zhiyong Li ,  Hou T. Ng ,  Sivapackia Ganapathiappan ,  Nag Patibandla

IPC: H01L33/46 ,  H01L25/16

CPC classification number: H01L33/46 ,  H01L25/167 ,  H01L2933/0025

Abstract: Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using multiple layers in a distributed Bragg reflector configuration. This reflective coating may be formed during the LED fabrication process before the micro-LED structure is coupled to the backplane. The pixel isolation structures on the backplane may also include a reflective coating that is applied above the LED epilayers.