Method of photoresist removal in the presence of a dielectric layer having a low k-value
    1.
    发明申请
    Method of photoresist removal in the presence of a dielectric layer having a low k-value 有权
    存在具有低k值的介电层的光致抗蚀剂去除方法

    公开(公告)号:US20030075524A1

    公开(公告)日:2003-04-24

    申请号:US09978121

    申请日:2001-10-15

    摘要: A method of photoresist removal is described. A substrate is located in a processing chamber. A mixture of gases is excited, the mixture comprising a majority component of a reducing process gas and a minority component of between 0.1% and 10% by volume of an oxidizing process gas. Reactive gas species are thereby generated. A photoresist layer with an exposed dielectric layer on the substrate in the chamber is then exposed to the reactive gas mixture to selectively remove the photoresist layer from the dielectric layer.

    摘要翻译: 描述了光致抗蚀剂去除的方法。 衬底位于处理室中。 激发气体的混合物,该混合物包含还原过程气体的主要成分和少于0.1-10体积%的氧化处理气体的少数成分。 由此产生反应性气体物质。 然后在腔室中的衬底上具有暴露的电介质层的光致抗蚀剂层暴露于反应性气体混合物以从介电层选择性地去除光致抗蚀剂层。