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公开(公告)号:US20180047599A1
公开(公告)日:2018-02-15
申请号:US15674180
申请日:2017-08-10
Applicant: Applied Materials, Inc.
Inventor: Kang-Lie CHIANG , Greg A. BLACKBURN , Pallavi ZHANG , Michael D. ARMACOST , Nitin KHURANA
IPC: H01L21/67 , G01R19/165 , G01R21/06
CPC classification number: H01L21/67253 , G01R19/16576 , G01R21/06 , H01L21/67069 , H01L21/67242 , H01L21/67276
Abstract: Embodiments of the present disclosure provide a method, system, and computer program product for monitoring a service life of a chamber component. In one example, the method includes receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber. The processor compares the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component. The processor determines whether the one or more power measurements exceed the threshold values. If the processor determines that the one or more power measurements exceed the threshold values, the processor takes remedial measures for the service life of the chamber component.
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公开(公告)号:US20160358803A1
公开(公告)日:2016-12-08
申请号:US15152489
申请日:2016-05-11
Applicant: Applied Materials, Inc.
Inventor: Leung Kway LEE , Michael S. COX , Pallavi ZHANG
IPC: H01L21/683 , H01L21/677
CPC classification number: H01L21/6833 , H01L21/67336
Abstract: Embodiments described herein provide an electrostatic carrier for transferring a substrate. The electrostatic carrier may have a transparent body. The transparent body may have a first surface sized to transport the substrate into and out of a processing chamber. The electrostatic carrier may also have one or more electrostatic chucking electrodes coupled to the transparent body. The one or more electrostatic chucking electrodes may include a transparent conductive oxide material. In certain embodiments the transparent conductive oxide material is an indium-tin oxide material.
Abstract translation: 本文所述的实施例提供了用于转移衬底的静电载体。 静电载体可以具有透明体。 透明体可以具有尺寸适于将衬底输送进出处理室的第一表面。 静电载体也可以具有一个或多个耦合到透明体的静电吸附电极。 一个或多个静电吸附电极可以包括透明导电氧化物材料。 在某些实施方案中,透明导电氧化物材料是氧化铟锡材料。
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公开(公告)号:US20180330977A1
公开(公告)日:2018-11-15
申请号:US15593502
申请日:2017-05-12
Applicant: Applied Materials, Inc.
Inventor: Chong JIANG , Lei JING , Mingte LIU , Adolph Miller ALLEN , Michael W. JOHNSON , Pallavi ZHANG , Michael D. ARMACOST
IPC: H01L21/683 , H01L21/66 , H01L21/67 , H01L21/02
CPC classification number: H01L21/6833 , H01J37/32091 , H01J37/32577 , H01J37/32697 , H01J37/32706 , H01J37/32715 , H01J37/32935 , H01J37/3299
Abstract: Embodiments of the disclosure relate to methods and a system for adjusting the chucking voltage of an electrostatic chuck. In one embodiment, a system for plasma processing a substrate includes a plasma processing chamber, a radio-frequency (RF) matching circuit coupled to the chamber, a sensor and a controller. The chamber includes a chamber body having an inner volume, a bipolar electrostatic chuck disposed in the inner volume and a power supply configured to provide chucking voltage to a pair of electrodes embedded within the electrostatic chuck. When plasma is energized within the chamber by the application of RF power through an RF matching circuit, the sensor is configured to detect a change in an electrical characteristic at the RF matching circuit. The controller is coupled to the power supply and configured to adjust the chucking voltage in response to the change in the electrical characteristic detected by the sensor.
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公开(公告)号:US20190148194A1
公开(公告)日:2019-05-16
申请号:US16240318
申请日:2019-01-04
Applicant: Applied Materials, Inc.
Inventor: Kang-Lie CHIANG , Greg A. BLACKBURN , Pallavi ZHANG , Michael D. ARMACOST , Nitin KHURANA
IPC: H01L21/67 , G01R19/165 , G01R21/06
CPC classification number: H01L21/67253 , G01R19/16576 , G01R21/06 , H01L21/67069 , H01L21/67242 , H01L21/67276
Abstract: Embodiments of the present disclosure provide a method, system, and computer program product for monitoring a service life of a chamber component. In one example, the method includes receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber. The processor compares the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component. The processor determines whether the one or more power measurements exceed the threshold values. If the processor determines that the one or more power measurements exceed the threshold values, the processor takes remedial measures for the service life of the chamber component.
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