公开(公告)号：US20250069894A1

公开(公告)日：2025-02-27

申请号：US18223382

申请日：2023-07-18

Applicant: Applied Materials Inc.

Inventor： Doreen Wei Ying Yong ,  Tuck Foong Koh ,  Mikhail Korolik ,  John Sudijono ,  Paul E. Gee

IPC: H01L21/311

Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and an amine or a phosphine, or a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species with a sulfur-containing species, into a semiconductor processing chamber containing a substrate, and forming an activated species of the precursor to etch a substrate. The substrate has a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.

公开(公告)号：US20240420962A1

公开(公告)日：2024-12-19

申请号：US18210918

申请日：2023-06-16

Applicant: Applied Materials, Inc.

Inventor： Doreen Wei Ying Yong ,  Tuck Foong Koh ,  John Sudijono ,  Mikhail Korolik ,  Paul E. Gee ,  Thai Cheng Chua ,  Philip A. Kraus

IPC: H01L21/311 ,  H01J37/32

Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include an etching chemistry (a plasma of a fluorine-containing precursor and a first gas mixture), and a passivating chemistry (a plasma of a sulfur-containing precursor and a second gas mixture). In some embodiments, the sulfur-containing precursor and the second gas mixture are present in a ratio of sulfur-containing precursor to second gas mixture in a range of from 0.01 to 5. The methods include etching a substrate having a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.

公开(公告)号：US20210111033A1

公开(公告)日：2021-04-15

申请号：US16598167

申请日：2019-10-10

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Mikhail Korolik ,  Paul E. Gee ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Doreen Wei Ying Yong ,  Kah Wee Ang ,  Debanjan Jana ,  Niharendu Mahapatra

IPC: H01L21/311

Abstract: Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The fluorine-containing precursor may be characterized by a molecular formula of XFy, and y may be greater than or equal to 5. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include laterally etching the layers of silicon nitride.

公开(公告)号：US20240120210A1

公开(公告)日：2024-04-11

申请号：US17963687

申请日：2022-10-11

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Paul E. Gee ,  Wei Ying Doreen Yong ,  Tuck Foong Koh ,  John Sudijono ,  Philip A. Kraus ,  Thai Cheng Chua

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/32136 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/3065

Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.

公开(公告)号：US20220293430A1

公开(公告)日：2022-09-15

申请号：US17590142

申请日：2022-02-01

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Mikhail Korolik ,  Paul E. Gee ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Wei Ying Doreen Yong ,  Kah Wee Ang ,  Samarth Jain

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

Abstract: Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.