公开(公告)号：US20240183035A1

公开(公告)日：2024-06-06

申请号：US17991931

申请日：2022-11-22

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Long Liu

IPC分类号： C23C16/455 ,  C23C16/02 ,  C23C16/04

CPC分类号： C23C16/45553 ,  C23C16/0272 ,  C23C16/045

摘要： Methods of selectively depositing a selectively deposited layer are described. Exemplary processing methods may include treating a substrate comprising a non-hydroxyl-containing surface and a second surface with one or more of ozone, hydrogen peroxide, or a hydrogen plasma to passivate the second surface. In one or more embodiments, a selectively deposited layer is then selectively deposited on the non-hydroxyl-containing surface and not on the second surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the non-hydroxyl-containing surface and not on the second surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial selectively deposited layer. The methods may include removing a second precursor effluent from the substrate.

公开(公告)号：US11894230B2

公开(公告)日：2024-02-06

申请号：US18101317

申请日：2023-01-25

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Eswaranand Venkatasubramanian ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC分类号： H10B41/27 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/0332 ,  H01L21/0337 ,  H10B41/27 ,  H01L21/31122 ,  H01L21/31144

摘要： Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

公开(公告)号：US20230260800A1

公开(公告)日：2023-08-17

申请号：US17671938

申请日：2022-02-15

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Jiteng Gu ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31144 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02205

摘要： Hard masks and methods of forming hard masks are described. The hard mask has an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa. The method comprises exposing a substrate to a deposition gas comprising a dopant gas or a precursor (solid (e.g. Alkylborane compounds) or liquid (e.g. Borazine)), a carbon gas and argon at a temperature less than or equal to 550 C, and igniting a plasma from the deposition gas to form an ultrananocrystalline diamond film having an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa.

公开(公告)号：US20220131096A1

公开(公告)日：2022-04-28

申请号：US17078509

申请日：2020-10-23

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Xinke Wang ,  John Sudijono ,  Xiao Gong

IPC分类号： H01L51/05 ,  H01L27/28 ,  H01L51/00 ,  H01L51/10

摘要： Devices comprising a resistance-switching polymer film are described. Also described are methods of making the devices comprising the resistance-switching polymer film.

公开(公告)号：US20210111033A1

公开(公告)日：2021-04-15

申请号：US16598167

申请日：2019-10-10

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Mikhail Korolik ,  Paul E. Gee ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Doreen Wei Ying Yong ,  Kah Wee Ang ,  Debanjan Jana ,  Niharendu Mahapatra

IPC分类号： H01L21/311

摘要： Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The fluorine-containing precursor may be characterized by a molecular formula of XFy, and y may be greater than or equal to 5. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include laterally etching the layers of silicon nitride.

公开(公告)号：US20230253201A1

公开(公告)日：2023-08-10

申请号：US18134802

申请日：2023-04-14

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC分类号： H01L21/02 ,  C23C16/44 ,  C23C16/34 ,  C23C16/455

CPC分类号： H01L21/02211 ,  H01L21/0217 ,  C23C16/4408 ,  C23C16/345 ,  C23C16/45553 ,  H01L21/0228

摘要： Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US20230170217A1

公开(公告)日：2023-06-01

申请号：US18101317

申请日：2023-01-25

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Eswaranand Venkatasubramanian ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC分类号： H01L21/033 ,  H10B41/27

CPC分类号： H01L21/0332 ,  H01L21/0337 ,  H10B41/27 ,  H01L21/31144

摘要： Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

公开(公告)号：US11594416B2

公开(公告)日：2023-02-28

申请号：US17007441

申请日：2020-08-31

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Eswaranand Venkatasubramanian ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC分类号： H01L21/033 ,  H01L27/11556 ,  H01L21/311

摘要： Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

公开(公告)号：US11552265B2

公开(公告)日：2023-01-10

申请号：US17078509

申请日：2020-10-23

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Xinke Wang ,  John Sudijono ,  Xiao Gong

IPC分类号： H01L51/05 ,  H01L51/10 ,  H01L51/00 ,  H01L27/28

摘要： Devices comprising a resistance-switching polymer film are described. Also described are methods of making the devices comprising the resistance-switching polymer film.

公开(公告)号：US20220293430A1

公开(公告)日：2022-09-15

申请号：US17590142

申请日：2022-02-01

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Mikhail Korolik ,  Paul E. Gee ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Wei Ying Doreen Yong ,  Kah Wee Ang ,  Samarth Jain

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01J37/32

摘要： Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.