公开(公告)号：US11670513B2

公开(公告)日：2023-06-06

申请号：US17227327

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng Ow ,  Junqi Wei ,  Wen Long Favier Shoo ,  Ananthkrishna Jupudi ,  Takashi Shimizu ,  Kelvin Boh ,  Tuck Foong Koh

IPC: H01L21/02 ,  H01L21/30 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L21/3003 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US11610807B2

公开(公告)日：2023-03-21

申请号：US17227354

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V. Kesapragada ,  Clinton Goh

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US11569122B2

公开(公告)日：2023-01-31

申请号：US17217179

申请日：2021-03-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V. Kesapragada ,  Clinton Goh

IPC: H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US20240120210A1

公开(公告)日：2024-04-11

申请号：US17963687

申请日：2022-10-11

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Paul E. Gee ,  Wei Ying Doreen Yong ,  Tuck Foong Koh ,  John Sudijono ,  Philip A. Kraus ,  Thai Cheng Chua

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/32136 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/3065

Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.

公开(公告)号：US10978334B2

公开(公告)日：2021-04-13

申请号：US14602885

申请日：2015-01-22

Applicant: Applied Materials, Inc.

Inventor： Chin Hock Toh ,  Tuck Foong Koh ,  Sriskantharajah Thirunavukarasu ,  Jen Sern Lew ,  Arvind Sundarrajan ,  Seshadri Ramaswami

IPC: H01L21/687 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67

Abstract: A sealing structure is between a workpiece or substrate and a carrier for plasma processing. In one example, a substrate carrier has a top surface for holding a substrate, the top surface having a perimeter and a resilient sealing ridge on the perimeter of the top surface to contact the substrate when the substrate is being carried on the carrier.

公开(公告)号：US20250069894A1

公开(公告)日：2025-02-27

申请号：US18223382

申请日：2023-07-18

Applicant: Applied Materials Inc.

Inventor： Doreen Wei Ying Yong ,  Tuck Foong Koh ,  Mikhail Korolik ,  John Sudijono ,  Paul E. Gee

IPC: H01L21/311

Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and an amine or a phosphine, or a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species with a sulfur-containing species, into a semiconductor processing chamber containing a substrate, and forming an activated species of the precursor to etch a substrate. The substrate has a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.

公开(公告)号：US11629409B2

公开(公告)日：2023-04-18

申请号：US16424302

申请日：2019-05-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Ribhu Gautam ,  Ananthkrishna Jupudi ,  Tuck Foong Koh ,  Preetham P. Rao ,  Vinodh Ramachandran ,  Yueh Sheng Ow ,  Yuichi Wada ,  Cheng-Hsiung Tsai ,  Kai Liang Liew

IPC: C23C16/511 ,  B01J19/12 ,  C23C16/54 ,  H05B6/64 ,  H01J37/32

Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

公开(公告)号：US11328929B2

公开(公告)日：2022-05-10

申请号：US16399478

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng Ow ,  Junqi Wei ,  Wen Long Favier Shoo ,  Ananthkrishna Jupudi ,  Takashi Shimizu ,  Kelvin Boh ,  Tuck Foong Koh

IPC: H01L21/311 ,  H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US10991617B2

公开(公告)日：2021-04-27

申请号：US16403796

申请日：2019-05-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V Kesapragada ,  Clinton Goh

IPC: H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US20240420962A1

公开(公告)日：2024-12-19

申请号：US18210918

申请日：2023-06-16

Applicant: Applied Materials, Inc.

Inventor： Doreen Wei Ying Yong ,  Tuck Foong Koh ,  John Sudijono ,  Mikhail Korolik ,  Paul E. Gee ,  Thai Cheng Chua ,  Philip A. Kraus

IPC: H01L21/311 ,  H01J37/32

Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include an etching chemistry (a plasma of a fluorine-containing precursor and a first gas mixture), and a passivating chemistry (a plasma of a sulfur-containing precursor and a second gas mixture). In some embodiments, the sulfur-containing precursor and the second gas mixture are present in a ratio of sulfur-containing precursor to second gas mixture in a range of from 0.01 to 5. The methods include etching a substrate having a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.