公开(公告)号：US20020190379A1

公开(公告)日：2002-12-19

申请号：US10104842

申请日：2002-03-22

申请人： Applied Materials, Inc.

发明人： Ping Jian ,  Seshadri Ganguli ,  Karl A. Littau ,  Christophe Marcadal ,  Ling Chen

IPC分类号： H01L021/44

CPC分类号： C23C16/0281 ,  C23C16/16 ,  H01L21/28556

摘要： In accordance with the present invention, a method is provided for forming an improved tungsten layer. In one embodiment, a CVD method for depositing a tungsten layer on a substrate includes forming a bilayer of titanium-nitride/titanium (TiN/Ti) over the substrate, placing the substrate in a deposition zone of a substrate processing chamber, and introducing a fluorine-free tungsten-containing precursor and a carrier gas into the deposition zone for forming a tungsten nucleation layer over the TiN/Ti bilayer. The Ti layer is between the TiN layer and the substrate. After the tungsten nucleation formation, a process gas including a tungsten-containing source and a reduction agent are introduced into the deposition zone for forming the bulk tungsten layer. In one embodiment, the fluorine-free tungsten-containing precursor includes W(CO)6, and the carrier gas is Argon.

摘要翻译： 根据本发明，提供一种用于形成改进的钨层的方法。 在一个实施例中，用于在衬底上沉积钨层的CVD方法包括在衬底上形成氮化钛/钛（TiN / Ti）的双层，将衬底放置在衬底处理室的沉积区中，并引入 无氟含钨前体和载气进入沉积区，用于在TiN / Ti双层上形成钨成核层。 Ti层位于TiN层和衬底之间。 在钨成核形成之后，将包含含钨源和还原剂的工艺气体引入用于形成体钨层的沉积区中。 在一个实施方案中，无氟含钨前体包括W（CO）6，载气为氩。

公开(公告)号：US20040013803A1

公开(公告)日：2004-01-22

申请号：US10321033

申请日：2002-12-16

申请人： Applied Materials, Inc.

发明人： Hua Chung ,  Hongbin Fang ,  Ken K. Lai ,  Jeong Soo Byun ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi ,  Moris Kori ,  Xinliang Lu ,  Ping Jian

IPC分类号： C23C016/34 ,  B32B009/00

CPC分类号： C23C16/34 ,  C23C16/45525

摘要： Methods of depositing titanium nitride (TiN) films on a substrate are disclosed. The titanium nitride (TiN) films may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor and a NH3 gas on the substrate. The titanium-containing precursor and the NH3 gas react to form the titanium nitride (TiN) layer on the substrate. The titanium nitride (TiN) films are compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is fabricated. The titanium nitride films may also be used as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.

摘要翻译： 公开了在衬底上沉积氮化钛（TiN）膜的方法。 氮化钛（TiN）膜可以通过在衬底上交替吸附含钛前体和NH 3气体的循环沉积工艺来形成。 含钛前体和NH 3气体反应以在衬底上形成氮化钛（TiN）层。 氮化钛（TiN）膜与集成电路制造工艺兼容。 在一个集成电路制造工艺中，制造互连结构。 氮化钛膜也可以用作三维电容器结构的电极，例如沟槽电容器和冠状电容器。

公开(公告)号：US20030127043A1

公开(公告)日：2003-07-10

申请号：US10194629

申请日：2002-07-12

申请人： Applied Materials, Inc.

发明人： Xinliang Lu ,  Ping Jian ,  John Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

摘要： A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

摘要翻译： 使用顺序沉积工艺形成钨成核层的方法。 钨成核层通过在处理室中使含钨前体和还原气体的脉冲反应而在基底上沉积钨而形成。 此后，从处理室除去从钨沉积产生的反应副产物。 在从处理室中除去反应副产物之后，将还原气体的流动提供给处理室以与其中剩余的含钨前体反应。 这种沉积工艺形成具有良好阶梯覆盖的钨成核层。 可以重复将含钨前体和还原气体的脉冲反应，除去反应副产物以及向处理室提供还原气体流的顺序沉积过程，直到钨成核层的期望厚度为 形成。