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    Formation of refractory metal nitrides using chemisorption techniques
    1.
    发明申请
    Formation of refractory metal nitrides using chemisorption techniques 审中-公开
    使用化学吸附技术形成难熔金属氮化物

    公开(公告)号：US20030049931A1

    公开(公告)日：2003-03-13

    申请号：US09960469

    申请日：2001-09-19

    申请人： APPLIED MATERIALS, INC.

    发明人： Jeong Soo Byun ,  Lin Yin ,  Frederick C. Wu ,  Ramanujapuram A. Srinivas ,  Avgerinos Gelatos ,  Alfred W. Mak ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha

    IPC分类号： H01L021/4763

    CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/76876

    摘要： Refractory metal nitride layers for integrated circuit fabrication are described. The refractory metal nitride layer may be formed by sequentially chemisorbing alternating monolayers of a nitrogen-containing compound and a refractory metal compound onto a substrate. A composite refractory metal nitride layer is also described. The composite refractory metal nitride layer may be formed by sequentially chemisorbing monolayers of a nitrogen-containing compound and two or more refractory metal compounds onto a substrate.

    摘要翻译： 描述了用于集成电路制造的耐火金属氮化物层。 难熔金属氮化物层可以通过将含氮化合物和难熔金属化合物的单层依次化学吸附到基底上而形成。 还描述了复合耐火金属氮化物层。 复合耐火金属氮化物层可以通过将含氮化合物和两种或更多种难熔金属化合物的单层依次化学吸附在基材上而形成。

    Pulsed nucleation deposition of tungsten layers
    4.
    发明申请
    Pulsed nucleation deposition of tungsten layers 有权
    钨层的脉冲成核沉积

    公开(公告)号：US20030127043A1

    公开(公告)日：2003-07-10

    申请号：US10194629

    申请日：2002-07-12

    申请人： Applied Materials, Inc.

    发明人： Xinliang Lu ,  Ping Jian ,  John Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

    IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

    CPC分类号： H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

    摘要： A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

    摘要翻译： 使用顺序沉积工艺形成钨成核层的方法。 钨成核层通过在处理室中使含钨前体和还原气体的脉冲反应而在基底上沉积钨而形成。 此后，从处理室除去从钨沉积产生的反应副产物。 在从处理室中除去反应副产物之后，将还原气体的流动提供给处理室以与其中剩余的含钨前体反应。 这种沉积工艺形成具有良好阶梯覆盖的钨成核层。 可以重复将含钨前体和还原气体的脉冲反应，除去反应副产物以及向处理室提供还原气体流的顺序沉积过程，直到钨成核层的期望厚度为 形成。

    Formation of titanium nitride films using a cyclical deposition process
    8.
    发明申请
    Formation of titanium nitride films using a cyclical deposition process 审中-公开
    使用循环沉积工艺形成氮化钛膜

    公开(公告)号：US20040013803A1

    公开(公告)日：2004-01-22

    申请号：US10321033

    申请日：2002-12-16

    申请人： Applied Materials, Inc.

    发明人： Hua Chung ,  Hongbin Fang ,  Ken K. Lai ,  Jeong Soo Byun ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi ,  Moris Kori ,  Xinliang Lu ,  Ping Jian

    IPC分类号： C23C016/34 ,  B32B009/00

    CPC分类号： C23C16/34 ,  C23C16/45525

    摘要： Methods of depositing titanium nitride (TiN) films on a substrate are disclosed. The titanium nitride (TiN) films may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor and a NH3 gas on the substrate. The titanium-containing precursor and the NH3 gas react to form the titanium nitride (TiN) layer on the substrate. The titanium nitride (TiN) films are compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is fabricated. The titanium nitride films may also be used as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.

    摘要翻译： 公开了在衬底上沉积氮化钛（TiN）膜的方法。 氮化钛（TiN）膜可以通过在衬底上交替吸附含钛前体和NH 3气体的循环沉积工艺来形成。 含钛前体和NH 3气体反应以在衬底上形成氮化钛（TiN）层。 氮化钛（TiN）膜与集成电路制造工艺兼容。 在一个集成电路制造工艺中，制造互连结构。 氮化钛膜也可以用作三维电容器结构的电极，例如沟槽电容器和冠状电容器。