公开(公告)号：US20040014315A1

公开(公告)日：2004-01-22

申请号：US10299212

申请日：2002-11-18

Applicant: Applied Materials, Inc.

Inventor： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

IPC: H01L021/44

CPC classification number: C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

Abstract translation: 提供了沉积钨膜的方法。 所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

公开(公告)号：US20030190423A1

公开(公告)日：2003-10-09

申请号：US10118605

申请日：2002-04-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael Xi Yang ,  Hyungsuk Alexander Yoon ,  Hui Zhang ,  Hongbin Fang ,  Ming Xi

IPC: C23C016/00

CPC classification number: C23C16/45544 ,  C23C16/45531 ,  C23C16/45561

Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.

Abstract translation: 本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。 在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。 一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。 在一个方面，三元材料层包括但不限于钨硼硅（WBxSiy），氮化硅钛（TiSixNy），氮化钽（TaSixNy），氧氮化硅（SiOxNy）和氧化铪铪（HfSixOy） 。 在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

公开(公告)号：US20040013803A1

公开(公告)日：2004-01-22

申请号：US10321033

申请日：2002-12-16

Applicant: Applied Materials, Inc.

Inventor： Hua Chung ,  Hongbin Fang ,  Ken K. Lai ,  Jeong Soo Byun ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi ,  Moris Kori ,  Xinliang Lu ,  Ping Jian

IPC: C23C016/34 ,  B32B009/00

CPC classification number: C23C16/34 ,  C23C16/45525

Abstract: Methods of depositing titanium nitride (TiN) films on a substrate are disclosed. The titanium nitride (TiN) films may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor and a NH3 gas on the substrate. The titanium-containing precursor and the NH3 gas react to form the titanium nitride (TiN) layer on the substrate. The titanium nitride (TiN) films are compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is fabricated. The titanium nitride films may also be used as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.

Abstract translation: 公开了在衬底上沉积氮化钛（TiN）膜的方法。 氮化钛（TiN）膜可以通过在衬底上交替吸附含钛前体和NH 3气体的循环沉积工艺来形成。 含钛前体和NH 3气体反应以在衬底上形成氮化钛（TiN）层。 氮化钛（TiN）膜与集成电路制造工艺兼容。 在一个集成电路制造工艺中，制造互连结构。 氮化钛膜也可以用作三维电容器结构的电极，例如沟槽电容器和冠状电容器。

公开(公告)号：US20030153181A1

公开(公告)日：2003-08-14

申请号：US10074898

申请日：2002-02-11

Applicant: Applied Materials, Inc.

Inventor： Hyungsuk A. Yoon ,  Hongbin Fang ,  Michael X. Yang

IPC: H01L021/44

CPC classification number: C23C16/45525 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76877

Abstract: A method of forming a composite tungsten film on a substrate is described. The composite tungsten film comprises sequentially deposited tungsten nucleation layers and tungsten bulk layers. Each of the tungsten nucleation layers and the tungsten bulk layers have a thickness less than about 300 null. The tungsten nucleation layers and the tungsten bulk layers are formed one over the other until a desired thickness for the composite tungsten film is achieved. The resulting composite tungsten film exhibits good film morphology. The tungsten nucleation layers may be formed using a cyclical deposition process by alternately adsorbing a tungsten-containing precursor and a reducing gas on the substrate. The tungsten bulk layers may be formed using a chemical vapor deposition (CVD) process by thermally decomposing a tungsten-containing precursor.

Abstract translation: 描述了在基板上形成复合钨膜的方法。 复合钨膜包括顺序沉积的钨成核层和钨体层。 每个钨成核层和钨体层具有小于约的厚度。 钨成核层和钨本体层之间形成一个直到形成用于复合钨膜的期望厚度。 所得的复合钨膜表现出良好的膜形态。 可以通过在基板上交替吸附含钨前体和还原气体的循环沉积工艺来形成钨成核层。 钨体层可以通过热分解含钨前体的化学气相沉积（CVD）工艺来形成。