公开(公告)号：US20220236250A1

公开(公告)日：2022-07-28

申请号：US17617153

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Joseph R. JOHNSON ,  Roger QUON ,  Archana KUMAR ,  Ryan Scott SMITH ,  Jeremiah HEBDING ,  Raghav SREENIVASAN

IPC: G01N33/487

Abstract: Embodiments of the present disclosure provide methods of forming solid state dual pore sensors which may be used for biopolymer sequencing and dual pore sensors formed therefrom. In one embodiment, a dual pore sensor features a substrate having a patterned surface comprising two recessed regions spaced apart by a divider wall and a membrane layer disposed on the patterned surface. The membrane layer, the divider wall, and one or more surfaces of each of the two recessed regions collectively define a first fluid reservoir and a second fluid reservoir. A first nanopore is disposed through a portion of the membrane layer disposed over the first fluid reservoir and a second nanopore is disposed through a portion of the membrane layer disposed over the second fluid reservoir. Herein, opposing surfaces of the divider wall are sloped to each form an angle of less than 90° with a respective reservoir facing surface of the membrane layer.

公开(公告)号：US20240282809A1

公开(公告)日：2024-08-22

申请号：US18171090

申请日：2023-02-17

Applicant: Applied Materials, Inc.

Inventor： Amirhasan NOURBAKHSH ,  Raman GAIRE ,  Pei LIU ,  Tyler SHERWOOD ,  Ryan Scott SMITH ,  Roger QUON ,  Siddarth KRISHNAN

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66477

Abstract: A super junction device with an increased voltage rating may be formed by decreasing the width of the P-type region and increasing the doping concentration, while also increasing the height of the overall device. However, instead of etching a trench in the N-type material to fill with the P-type material, a trench may be etched for both the P-type region and an adjacent N-type region. This allows the height of the overall device to be increased while maintaining a feasible aspect ratio for the trench. The P-type material may then be formed as a sidewall liner on the trench that is relatively thin compared to the remaining width of the trench. The trench may then be filled with N-type material such that the P-type region fills the space between the N-type regions without any voids or seams, while having a width that would be unattainable using traditional etch-and-fill methods for the P-type region alone.

公开(公告)号：US20220242725A1

公开(公告)日：2022-08-04

申请号：US17617151

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Joseph R. JOHNSON ,  Roger QUON ,  Archana KUMAR ,  Ryan Scott SMITH ,  Jeremiah HEBDING ,  Raghav SREENIVASAN

IPC: B82B3/00 ,  B81C1/00 ,  B82Y15/00 ,  B82Y40/00

Abstract: Embodiments of the present disclosure provide methods of forming solid state dual pore sensors which may be used for biopolymer sequencing and dual pore sensors formed therefrom. In one embodiment, a method of forming a dual pore sensor includes providing a pattern in a surface of a substrate. Generally, the pattern features two fluid reservoirs separated by a divider wall. The method further includes depositing a layer of sacrificial material into the two fluid reservoirs, depositing a membrane layer, patterning two nanopores through the membrane layer, removing the sacrificial material from the two fluid reservoirs, and patterning one or more fluid ports and a common chamber.

公开(公告)号：US20220016628A1

公开(公告)日：2022-01-20

申请号：US16933597

申请日：2020-07-20

Applicant: Applied Materials, Inc.

Inventor： Ryan Scott SMITH ,  Roger QUON ,  David COLLINS ,  George ODLUM ,  Raghav SREENIVASAN ,  Joseph R. JOHNSON

IPC: B01L3/00 ,  B82B1/00 ,  B82B3/00 ,  G01N27/447 ,  G01N27/40 ,  G01N33/487

Abstract: Embodiments of the present disclosure provide nanopore devices, such as nanopore sensors and/or other nanofluidic devices. In one or more embodiments, a nanopore device contains a substrate, an optional lower protective oxide layer disposed on the substrate, a membrane disposed on the lower protective oxide layer, and an optional upper protective oxide layer disposed on the membrane. The membrane has a pore and contains silicon nitride. The silicon nitride has a nitrogen to silicon ratio of about 0.98 to about 1.02 and the membrane has an intrinsic stress value of about −1,000 MPa to about 1,000 MPa. The nanopore device also contains a channel extending through at least the substrate, the lower protective oxide layer, the membrane, the upper protective oxide layer, and the upper protective silicon nitride layer.