公开(公告)号：US09523158B2

公开(公告)日：2016-12-20

申请号：US14606884

申请日：2015-01-27

Applicant: Applied Materials, Inc.

Inventor： Takao Yonehara ,  Karl J. Armstrong ,  Fatih Mert Ozkeskin

IPC: B32B38/10 ,  C30B33/00 ,  C30B25/02 ,  H01L21/677 ,  H01L21/304 ,  H01L21/306 ,  B32B43/00 ,  H01L21/673 ,  H01L21/683 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: C30B33/00 ,  B32B38/10 ,  B32B43/006 ,  C30B25/02 ,  H01L21/02005 ,  H01L21/02513 ,  H01L21/02658 ,  H01L21/304 ,  H01L21/306 ,  H01L21/67092 ,  H01L21/67383 ,  H01L21/6776 ,  H01L21/6838 ,  H01L21/68721 ,  H01L21/68764 ,  H01L2221/683 ,  H01L2221/68318 ,  H01L2221/68363 ,  Y10T156/1121 ,  Y10T156/1132 ,  Y10T156/19 ,  Y10T156/1922 ,  Y10T156/1944

Abstract: Method and apparatus for forming free-standing, substantially monocrystalline semiconductor substrates is described. A template substrate is subjected to a process of forming a porous layer on each major surface of the template substrate. The porous layer is smoothed, and then an epitaxial layer is formed on each porous layer. Mechanical energy is used to separate the epitaxial layers from the template substrate, which is recycled by removing any remaining porous and epitaxial material.

Abstract translation: 描述了用于形成独立的，基本单晶半导体衬底的方法和装置。 对模板基板进行在模板基板的每个主表面上形成多孔层的工艺。 使多孔层平滑，然后在每个多孔层上形成外延层。 使用机械能来将外延层与模板衬底分离，通过去除任何剩余的多孔和外延材料来再循环外延层。