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公开(公告)号：US11608558B2
公开(公告)日：2023-03-21
申请号：US16843347
申请日：2020-04-08
Applicant: Applied Materials, Inc.
Inventor： Karl J. Armstrong , Ludovic Godet , Brian Alexander Cohen , Wayne McMillan , James D. Strassner , Benjamin Riordon
IPC: C23C16/40 , C23C14/04 , C23C16/04 , C23C16/455 , C23C14/08 , C23C14/06 , C23C14/14 , C23C16/24 , C23C16/34 , H01L21/677 , C23C16/56 , G02B6/132
Abstract: Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.
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公开(公告)号：US11976002B2
公开(公告)日：2024-05-07
申请号：US17141813
申请日：2021-01-05
Applicant: Applied Materials, Inc.
Inventor： Alexia Adilene Portillo Rivera , Andrew Ceballos , Kenichi Ohno , Rami Hourani , Karl J. Armstrong , Brian Alexander Cohen
CPC classification number: C03C17/3615 , C03C17/3626 , C03C17/3642 , C03C17/3644 , C03C17/3663 , C23C14/0652 , C23C14/08 , C23C14/18 , C23C14/3407 , C03C2218/154
Abstract: Embodiments of the present disclosure generally relate to encapsulated optical devices and methods for fabricating the encapsulated optical devices. In one or more embodiments, a method for encapsulating an optical device includes depositing a metallic silver layer on a substrate, depositing a barrier layer on the metallic silver layer, where the barrier layer contains silicon nitride, a metallic element, a metal nitride, or any combination thereof, and depositing an encapsulation layer containing silicon oxide on the barrier layer.
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3.发明授权公开(公告)号：US11735723B2
公开(公告)日：2023-08-22
申请号：US17939121
申请日：2022-09-07
Applicant: Applied Materials, Inc.
CPC classification number: H01M4/366 , H01M4/0404 , H01M4/0423 , H01M4/134 , H01M4/382 , H01M4/62 , H01M4/661 , H01M4/667 , H01M2004/027
Abstract: Implementations described herein generally relate to metal electrodes, more specifically lithium-containing anodes, high performance electrochemical devices, such as secondary batteries, including the aforementioned lithium-containing electrodes, and methods for fabricating the same. In one implementation, an anode electrode structure is provided. The anode electrode structure comprises a current collector comprising copper. The anode electrode structure further comprises a lithium metal film formed on the current collector. The anode electrode structure further comprises a solid electrolyte interface (SEI) film stack formed on the lithium metal film. The SEI film stack comprises a chalcogenide film formed on the lithium metal film. In one implementation, the SEI film stack further comprises a lithium oxide film formed on the chalcogenide film. In one implementation, the SEI film stack further comprises a lithium carbonate film formed on the lithium oxide film.
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公开(公告)号：US12084761B2
公开(公告)日：2024-09-10
申请号：US18111385
申请日：2023-02-17
Applicant: Applied Materials, Inc.
Inventor： Karl J. Armstrong , Ludovic Godet , Brian Alexander Cohen , Wayne McMillan , James D. Strassner , Benjamin B. Riordon
IPC: H01L21/677 , C23C14/04 , C23C14/06 , C23C14/08 , C23C14/14 , C23C16/04 , C23C16/24 , C23C16/34 , C23C16/40 , C23C16/455 , C23C16/56 , H01L21/68 , H01L21/683 , G02B6/132
CPC classification number: C23C16/405 , C23C14/042 , C23C14/0652 , C23C14/083 , C23C14/086 , C23C14/14 , C23C16/042 , C23C16/24 , C23C16/345 , C23C16/407 , C23C16/45525 , C23C16/56 , H01L21/67766 , H01L21/67778 , H01L21/682 , H01L21/6838 , G02B6/132
Abstract: Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.
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Patent Agency Ranking
公开(公告)号：US11976351B2
公开(公告)日：2024-05-07
申请号：US17692465
申请日：2022-03-11
Applicant: Applied Materials, Inc.
Inventor： Kenichi Ohno , Andrew Ceballos , Karl J. Armstrong , Takashi Kuratomi , Rami Hourani , Ludovic Godet
CPC classification number: C23C14/083 , C03C17/2456 , C23C14/35 , C23C14/54 , G02B1/10 , G02B1/041
Abstract: An optical device is provided. The optical device includes an optical device substrate having a first surface; and an optical device film disposed over the first surface of the optical device substrate. The optical device film is formed of titanium oxide. The titanium oxide is selected from the group of titanium(IV) oxide (TiO2), titanium monoxide (TiO), dititanium trioxide (Ti2O3), Ti3O, Ti2O, δ-TiOx, where x is 0.68 to 0.75, and TinO2n-1, where n is 3 to 9, the optical device film has a refractive index greater than 2.72 at a 520 nanometer (nm) wavelength, and a rutile phase of the titanium oxide comprises greater than 94 percent of the optical device film.
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公开(公告)号：US12077860B2
公开(公告)日：2024-09-03
申请号：US17366832
申请日：2021-07-02
Applicant: Applied Materials, Inc.
Inventor： Andrew Ceballos , Ludovic Godet , Karl J. Armstrong , Rami Hourani
IPC: G02B1/10 , C23C16/455 , C23C16/56
CPC classification number: C23C16/45563 , C23C16/56 , G02B1/10
Abstract: Embodiments of the present disclosure generally relate to methods and materials for optical device fabrication. More specifically, embodiments described herein provide for optical film deposition methods and materials to expand the process window for amorphous optical film deposition via incorporation of dopant atoms by suppressing the crystal growth of optical materials during deposition. By enabling amorphous films to be deposited at higher temperatures, significant cost savings and increased throughput are possible.
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公开(公告)号：US11565489B2
公开(公告)日：2023-01-31
申请号：US16253661
申请日：2019-01-22
Applicant: Applied Materials, Inc.
Inventor： Karl J. Armstrong , Jinxin Fu , Wilson Banez
IPC: B29D11/00
Abstract: Embodiments described herein relate to methods and materials for optical device fabrication. In one embodiment, a method of fabricating an optical device is provided. The method includes depositing a dielectric film on a substrate, depositing a wetting layer on the dielectric film, and depositing a metal containing film on the wetting layer. In another embodiment, an optical device is provided. The device includes a substrate, a dielectric film deposited on and contacting the substrate, a wetting layer deposited on and contacting the dielectric film, and a metal containing film deposited on and contacting the wetting layer.
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8.发明授权公开(公告)号：US11462733B2
公开(公告)日：2022-10-04
申请号：US17194899
申请日：2021-03-08
Applicant: Applied Materials, Inc.
Abstract: Implementations described herein generally relate to metal electrodes, more specifically lithium-containing anodes, high performance electrochemical devices, such as secondary batteries, including the aforementioned lithium-containing electrodes, and methods for fabricating the same. In one implementation, an anode electrode structure is provided. The anode electrode structure comprises a current collector comprising copper. The anode electrode structure further comprises a lithium metal film formed on the current collector. The anode electrode structure further comprises a solid electrolyte interface (SEI) film stack formed on the lithium metal film. The SEI film stack comprises a chalcogenide film formed on the lithium metal film. In one implementation, the SEI film stack further comprises a lithium oxide film formed on the chalcogenide film. In one implementation, the SEI film stack further comprises a lithium carbonate film formed on the lithium oxide film.
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公开(公告)号：US09523158B2
公开(公告)日：2016-12-20
申请号：US14606884
申请日：2015-01-27
Applicant: Applied Materials, Inc.
Inventor： Takao Yonehara , Karl J. Armstrong , Fatih Mert Ozkeskin
IPC: B32B38/10 , C30B33/00 , C30B25/02 , H01L21/677 , H01L21/304 , H01L21/306 , B32B43/00 , H01L21/673 , H01L21/683 , H01L21/67 , H01L21/687 , H01L21/02
CPC classification number: C30B33/00 , B32B38/10 , B32B43/006 , C30B25/02 , H01L21/02005 , H01L21/02513 , H01L21/02658 , H01L21/304 , H01L21/306 , H01L21/67092 , H01L21/67383 , H01L21/6776 , H01L21/6838 , H01L21/68721 , H01L21/68764 , H01L2221/683 , H01L2221/68318 , H01L2221/68363 , Y10T156/1121 , Y10T156/1132 , Y10T156/19 , Y10T156/1922 , Y10T156/1944
Abstract: Method and apparatus for forming free-standing, substantially monocrystalline semiconductor substrates is described. A template substrate is subjected to a process of forming a porous layer on each major surface of the template substrate. The porous layer is smoothed, and then an epitaxial layer is formed on each porous layer. Mechanical energy is used to separate the epitaxial layers from the template substrate, which is recycled by removing any remaining porous and epitaxial material.
Abstract translation: 描述了用于形成独立的，基本单晶半导体衬底的方法和装置。 对模板基板进行在模板基板的每个主表面上形成多孔层的工艺。 使多孔层平滑，然后在每个多孔层上形成外延层。 使用机械能来将外延层与模板衬底分离，通过去除任何剩余的多孔和外延材料来再循环外延层。
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