公开(公告)号：US20220076944A1

公开(公告)日：2022-03-10

申请号：US17529130

申请日：2021-11-17

Applicant: Applied Materials, Inc.

Inventor： Wenguang Li ,  James S. Papanu

IPC: H01L21/027 ,  H01L21/3065 ,  H01L21/78 ,  H01L21/308 ,  H01L21/822

Abstract: Water soluble organic-inorganic hybrid masks and mask formulations, and methods of dicing semiconductor wafers are described. In an example, a mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. A p-block metal compound, an s-block metal compound, or a transition metal compound is dissolved throughout the water-soluble matrix.

公开(公告)号：US11158540B2

公开(公告)日：2021-10-26

申请号：US15606456

申请日：2017-05-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenguang Li ,  James S. Papanu ,  Wei-Sheng Lei ,  Prabhat Kumar ,  Brad Eaton ,  Ajay Kumar ,  Alexander N. Lerner

IPC: H01L21/78 ,  H01L21/311 ,  H01L21/02 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/308

Abstract: Light-absorbing masks and methods of dicing semiconductor wafers are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits involves forming a mask above the semiconductor wafer. The mask includes a water-soluble matrix based on a solid component and water, and a light-absorber species throughout the water-soluble matrix. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask with gaps and corresponding trenches in the semiconductor wafer in regions between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the patterned mask to extend the trenches and to singulate the integrated circuits. The patterned mask protects the integrated circuits during the plasma etching.

公开(公告)号：US11211247B2

公开(公告)日：2021-12-28

申请号：US16777610

申请日：2020-01-30

Applicant: Applied Materials, Inc.

Inventor： Wenguang Li ,  James S. Papanu

IPC: H01L21/027 ,  H01L21/3065 ,  H01L21/78 ,  H01L21/308 ,  H01L21/822

Abstract: Water soluble organic-inorganic hybrid masks and mask formulations, and methods of dicing semiconductor wafers are described. In an example, a mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. A p-block metal compound, an s-block metal compound, or a transition metal compound is dissolved throughout the water-soluble matrix.

公开(公告)号：US11764061B2

公开(公告)日：2023-09-19

申请号：US17529130

申请日：2021-11-17

Applicant: Applied Materials, Inc.

Inventor： Wenguang Li ,  James S. Papanu

IPC: H01L21/027 ,  H01L21/3065 ,  H01L21/78 ,  H01L21/308 ,  H01L21/822

CPC classification number: H01L21/0275 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/30655 ,  H01L21/78 ,  H01L21/822

Abstract: Water soluble organic-inorganic hybrid masks and mask formulations, and methods of dicing semiconductor wafers are described. In an example, a mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. A p-block metal compound, an s-block metal compound, or a transition metal compound is dissolved throughout the water-soluble matrix.

公开(公告)号：US20210242014A1

公开(公告)日：2021-08-05

申请号：US16777610

申请日：2020-01-30

Applicant: Applied Materials, Inc.

Inventor： Wenguang Li ,  James S. Papanu

IPC: H01L21/027 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/78

Abstract: Water soluble organic-inorganic hybrid masks and mask formulations, and methods of dicing semiconductor wafers are described. In an example, a mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. A p-block metal compound, an s-block metal compound, or a transition metal compound is dissolved throughout the water-soluble matrix.

公开(公告)号：US20180342422A1

公开(公告)日：2018-11-29

申请号：US15606456

申请日：2017-05-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenguang Li ,  James S. Papanu ,  Wei-Sheng Lei ,  Prabhat Kumar ,  Brad Eaton ,  Ajay Kumar ,  Alexander N. Lerner

IPC: H01L21/78 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/268 ,  H01L21/02

Abstract: Light-absorbing masks and methods of dicing semiconductor wafers are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits involves forming a mask above the semiconductor wafer. The mask includes a water-soluble matrix based on a solid component and water, and a light-absorber species throughout the water-soluble matrix. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask with gaps and corresponding trenches in the semiconductor wafer in regions between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the patterned mask to extend the trenches and to singulate the integrated circuits. The patterned mask protects the integrated circuits during the plasma etching.

公开(公告)号：US09793132B1

公开(公告)日：2017-10-17

申请号：US15154790

申请日：2016-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenguang Li ,  James S. Papanu ,  Ramesh Krishnamurthy ,  Prabhat Kumar ,  Brad Eaton ,  Ajay Kumar ,  Alexander N. Lerner

IPC: H01L21/00 ,  H01L21/308 ,  H01L21/78 ,  H01L21/3065

CPC classification number: H01L21/3086 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/78

Abstract: Etch masks and methods of dicing semiconductor wafers are described. In an example, an etch mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. The etch mask also includes a plurality of particles dispersed throughout the water-soluble matrix. The plurality of particles has an average diameter approximately in the range of 5-100 nanometers. A ratio of weight % of the solid component to weight % of the plurality of particles is approximately in the range of 1:0.1-1:4.