公开(公告)号：US09117855B2

公开(公告)日：2015-08-25

申请号：US14230237

申请日：2014-03-31

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Yi-Heng Sen ,  Soonam Park ,  Dmitry Lubomirsky

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32036 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32541 ,  H01L21/3065

Abstract: Methods of controlling the polarity of capacitive plasma power applied to a remote plasma are described. Rather than applying a plasma power which involves both a positive and negative voltage swings equally, a capacitive plasma power is applied which favors either positive or negative voltage swings in order to select desirable process attributes. For example, the plasma power may be formed by applying a unipolar oscillating voltage between an electrode and a perforated plate. The unipolar oscillating voltage may have only positive or only negative voltages between the electrode and the perforated plate. The unipolar oscillating voltage may cross electrical ground in some portion of its oscillating voltage.

Abstract translation: 描述了控制施加到远程等离子体的电容等离子体功率的极性的方法。 不是施加包括正电压和负电压均等摆动的等离子体功率，而是施加电容性等离子体功率，其有利于正或负电压摆幅，以便选择期望的工艺属性。 例如，可以通过在电极和多孔板之间施加单极振荡电压来形成等离子体功率。 单极振荡电压在电极和多孔板之间可能仅具有正电压或仅负电压。 单极振荡电压可能在其振荡电压的某些部分交叉电接地。

公开(公告)号：US20150060265A1

公开(公告)日：2015-03-05

申请号：US14468066

申请日：2014-08-25

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Yi-Heng Sen ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32596 ,  H01J37/32018 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568

Abstract: Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.

Abstract translation: 本技术的实施例可以包括处理半导体衬底的方法。 该方法可以包括在处理区域中提供半导体衬底。 另外，该方法可以包括使气体流过由动力电极限定的空腔。 该方法可以进一步包括向被动电极施加负电压。 此外，该方法可以包括在空腔中冲击空心阴极放电以从气体形成空心阴极排出流出物。 然后可以通过由电接地电极限定的多个孔将空心阴极排出流出物流动到处理区域。 该方法可以包括使空心阴极排出流体与处理区域中的半导体衬底反应。

公开(公告)号：US20150155189A1

公开(公告)日：2015-06-04

申请号：US14230237

申请日：2014-03-31

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Yi-Heng Sen ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32036 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32541 ,  H01L21/3065

Abstract: Methods of controlling the polarity of capacitive plasma power applied to a remote plasma are described. Rather than applying a plasma power which involves both a positive and negative voltage swings equally, a capacitive plasma power is applied which favors either positive or negative voltage swings in order to select desirable process attributes. For example, the plasma power may be formed by applying a unipolar oscillating voltage between an electrode and a perforated plate. The unipolar oscillating voltage may have only positive or only negative voltages between the electrode and the perforated plate. The unipolar oscillating voltage may cross electrical ground in some portion of its oscillating voltage.

Abstract translation: 描述了控制施加到远程等离子体的电容等离子体功率极性的方法。 不是施加包括正电压和负电压均等摆动的等离子体功率，而是施加电容性等离子体功率，其有利于正或负电压摆幅，以便选择期望的工艺属性。 例如，可以通过在电极和多孔板之间施加单极振荡电压来形成等离子体功率。 单极振荡电压在电极和多孔板之间可能仅具有正电压或仅负电压。 单极振荡电压可能在其振荡电压的某些部分交叉电接地。

公开(公告)号：US09773648B2

公开(公告)日：2017-09-26

申请号：US14468066

申请日：2014-08-25

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Yi-Heng Sen ,  Soonam Park ,  Dmitry Lubomirsky

IPC: C23C14/32 ,  H01J37/32

CPC classification number: H01J37/32596 ,  H01J37/32018 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568

Abstract: Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.