公开(公告)号：US12110590B2

公开(公告)日：2024-10-08

申请号：US18381534

申请日：2023-10-18

Applicant: Applied Materials, Inc.

Inventor： Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Gregory Eugene Chichkanoff ,  Xinhai Han ,  Masaki Ogata ,  Kristopher Enslow ,  Wenjiao Wang

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/45536 ,  C23C16/4583 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32458 ,  H01J2237/3321

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US20210040607A1

公开(公告)日：2021-02-11

申请号：US16986632

申请日：2020-08-06

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Hang Yu ,  Kesong Hu ,  Kristopher Enslow ,  Masaki Ogata ,  Wenjiao Wang ,  Chuan Ying Wang ,  Chuanxi Yang ,  Joshua Maher ,  Phaik Lynn Leong ,  Qi En Teong ,  Alok Jain ,  Nagarajan Rajagopalan ,  Deenesh Padhi

IPC: C23C16/34 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11578 ,  C23C16/40

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

公开(公告)号：US12195846B2

公开(公告)日：2025-01-14

申请号：US16986632

申请日：2020-08-06

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Hang Yu ,  Kesong Hu ,  Kristopher R. Enslow ,  Masaki Ogata ,  Wenjiao Wang ,  Chuan Ying Wang ,  Chuanxi Yang ,  Joshua Maher ,  Phaik Lynn Leong ,  Grace Qi En Teong ,  Alok Jain ,  Nagarajan Rajagopalan ,  Deenesh Padhi ,  SeoYoung Lee

IPC: C23C16/00 ,  C23C16/34 ,  C23C16/40 ,  H10B41/20 ,  H10B41/35 ,  H10B43/20 ,  H10B43/35

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

公开(公告)号：US09816187B2

公开(公告)日：2017-11-14

申请号：US15278455

申请日：2016-09-28

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: G01N21/00 ,  C23C16/52 ,  G01B11/06 ,  H01L21/00 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  G01N21/55 ,  G01N21/65 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US09157730B2

公开(公告)日：2015-10-13

申请号：US14056203

申请日：2013-10-17

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik

IPC: G01B11/06 ,  H01L21/00

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract translation: 描述了根据PECVD工艺处理衬底的方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。

公开(公告)号：US11898249B2

公开(公告)日：2024-02-13

申请号：US18108989

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward W. Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/458 ,  C23C16/4557 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687 ,  G01N2201/1222

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US11530482B2

公开(公告)日：2022-12-20

申请号：US16894355

申请日：2020-06-05

Applicant: Applied Materials, Inc.

Inventor： Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Gregory Eugene Chichkanoff ,  Xinhai Han ,  Masaki Ogata ,  Kristopher Enslow ,  Wenjiao Wang

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US11339475B2

公开(公告)日：2022-05-24

申请号：US16678996

申请日：2019-11-08

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Deenesh Padhi ,  Daemian Raj Benjamin Raj ,  Kristopher Enslow ,  Wenjiao Wang ,  Masaki Ogata ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Gregory Eugene Chichkanoff ,  Shailendra Srivastava ,  Jonghoon Baek ,  Zakaria Ibrahimi ,  Juan Carlos Rocha-Alvarez ,  Tza-Jing Gung

IPC: C23C16/505 ,  C23C16/455 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  C23C16/34 ,  H01J37/32 ,  C23C16/40

Abstract: An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

公开(公告)号：US11276569B2

公开(公告)日：2022-03-15

申请号：US16515230

申请日：2019-07-18

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Tza-Jing Gung ,  Masaki Ogata ,  Yusheng Zhou ,  Xinhai Han ,  Deenesh Padhi ,  Juan Carlos Rocha ,  Amit Kumar Bansal ,  Mukund Srinivasan

IPC: H01L21/02

Abstract: Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO2. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of Si3N4. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.

公开(公告)号：US10060032B2

公开(公告)日：2018-08-28

申请号：US15802496

申请日：2017-11-03

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: G01B11/06 ,  C23C16/52 ,  H01L21/687 ,  C23C16/509 ,  H01L21/67 ,  G01N21/55 ,  G01N21/65 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455 ,  H01L21/00

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.