公开(公告)号：US11993842B2

公开(公告)日：2024-05-28

申请号：US18072392

申请日：2022-11-30

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Keith Tatseun Wong ,  Srinivas D. Nemani ,  Andrew C. Kummel ,  James Huang ,  Yunil Cho

IPC: C23C16/455 ,  C23C16/40 ,  C23C28/04

CPC classification number: C23C16/405 ,  C23C16/45523 ,  C23C28/04

Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US11542597B2

公开(公告)日：2023-01-03

申请号：US16902665

申请日：2020-06-16

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Keith Tatseun Wong ,  Srinivas D. Nemani ,  Andrew C. Kummel ,  James Huang ,  Yunil Cho

IPC: C23C16/455 ,  C23C16/40 ,  C23C28/04

Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US20250062107A1

公开(公告)日：2025-02-20

申请号：US18234169

申请日：2023-08-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Martin Hilkene ,  Tobin Kaufman-Osborn ,  Yunil Cho

IPC: H01J37/32 ,  H01J37/244

Abstract: A method of monitoring a plasma-based process in a process chamber includes measuring a first temperature at a first location associated with a process chamber during a plasma-based process; and determining a value representative of a first radical species flux associated with the plasma-based process based on the first temperature. The method includes a trained machine learning model to determine if a value representative of a radical species flux satisfies a radical species flux drift threshold.

公开(公告)号：US20240120195A1

公开(公告)日：2024-04-11

申请号：US17960979

申请日：2022-10-06

Applicant: Applied Materials, Inc. ,  Regents of the University of California

Inventor： Keith T. Wong ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Andrew C. Kummel ,  Yunil Cho ,  James Huang

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02068 ,  H01L21/02123 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/67017

Abstract: A method includes forming a conductive material on a first dielectric layer, exposing the conductive material to aniline to produce a passivated surface of the conductive material, and after exposing the conductive material to aniline, forming a second dielectric layer on the first dielectric layer using a deposition process. The deposition process is a water-free and plasma-free deposition process, and the second dielectric layer does not form on the passivated surface of the conductive material.