公开(公告)号：US20240120195A1

公开(公告)日：2024-04-11

申请号：US17960979

申请日：2022-10-06

Applicant: Applied Materials, Inc. ,  Regents of the University of California

Inventor： Keith T. Wong ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Andrew C. Kummel ,  Yunil Cho ,  James Huang

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02068 ,  H01L21/02123 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/67017

Abstract: A method includes forming a conductive material on a first dielectric layer, exposing the conductive material to aniline to produce a passivated surface of the conductive material, and after exposing the conductive material to aniline, forming a second dielectric layer on the first dielectric layer using a deposition process. The deposition process is a water-free and plasma-free deposition process, and the second dielectric layer does not form on the passivated surface of the conductive material.

公开(公告)号：US20240301552A1

公开(公告)日：2024-09-12

申请号：US18119432

申请日：2023-03-09

Applicant: APPLIED MATERIALS, INC. ,  The Regents of the University of California

Inventor： Harshil Kashyap ,  Andrew C. Kummel ,  Ajay Kumar Yadav ,  Keith T. Wong ,  Srinivas Nemani ,  Ellie Yieh

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/40

CPC classification number: C23C16/45529 ,  C23C16/24 ,  C23C16/40 ,  C23C16/45546 ,  C23C16/45553

Abstract: Described herein is a method for performing an atomic layer deposition process to form a silicon doped oxide film on a surface of the substrate. The oxide film may be a hafnium-zirconium oxide film, or a zirconium oxide film. The atomic layer deposition process may include forming the oxide layers and a silicon layer using a hydrogen peroxide as at least one of the precursors used in formation of the oxide layers.

公开(公告)号：US20210087677A1

公开(公告)日：2021-03-25

申请号：US17028156

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  HyoJin Kim

IPC: C23C16/30 ,  C23C16/02 ,  C23C16/56 ,  C23C16/455 ,  H01L27/108

Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.

公开(公告)号：US11626284B2

公开(公告)日：2023-04-11

申请号：US17150781

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  Hurshvardhan Srivastava ,  Srinivas D. Nemani ,  Johannes M. van Meer ,  Rajesh Prasad

IPC: H01L21/02 ,  H01L29/66 ,  C23C14/58 ,  H01L29/76 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C14/48 ,  H01L29/24

Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

公开(公告)号：US20240035152A1

公开(公告)日：2024-02-01

申请号：US18378425

申请日：2023-10-10

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  Hyojin Kim

IPC: C23C16/30 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56 ,  H10B12/00

CPC classification number: C23C16/305 ,  C23C16/0227 ,  C23C16/45553 ,  C23C16/56 ,  H10B12/00

Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.

公开(公告)号：US11821079B2

公开(公告)日：2023-11-21

申请号：US17028156

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  HyoJin Kim

IPC: C23C16/30 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56 ,  H10B12/00

CPC classification number: C23C16/305 ,  C23C16/0227 ,  C23C16/45553 ,  C23C16/56 ,  H10B12/00

Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.

公开(公告)号：US20220139765A1

公开(公告)日：2022-05-05

申请号：US17515773

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Hurshvardhan Srivastava ,  Keith T. Wong

IPC: H01L21/762 ,  H01L21/02 ,  C23C16/40

Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.

公开(公告)号：US20220108886A1

公开(公告)日：2022-04-07

申请号：US17150781

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  Hurshvardhan Srivastava ,  Srinivas D. Nemani ,  Johannes M. van Meer ,  Rajesh Prasad

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/24 ,  H01L29/76 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C14/48 ,  C23C14/58

Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

公开(公告)号：US12211736B2

公开(公告)日：2025-01-28

申请号：US17515773

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Hurshvardhan Srivastava ,  Keith T. Wong

IPC: H01L21/762 ,  C23C16/40 ,  H01L21/02 ,  H01J37/32

Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.

公开(公告)号：US20230187204A1

公开(公告)日：2023-06-15

申请号：US17844189

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Xiaodong Wang ,  Kevin Kashefi ,  Rongjun Wang ,  Shi You ,  Keith T. Wong ,  Yuchen Liu ,  Ya-Hsi Hwang ,  Jean Lu

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/0234 ,  H01L21/28568

Abstract: Provided are methods for pre-cleaning a substrate. A substrate having tungsten oxide (WOx) thereon is soaked in tungsten fluoride (WF6), which reduces the tungsten oxide (WOx) to tungsten (W). Subsequently, the substrate is treated with hydrogen, e.g., plasma treatment or thermal treatment, to reduce the amount of fluorine present so that fluorine does not invade the underlying insulating layer.