公开(公告)号：US12261039B2

公开(公告)日：2025-03-25

申请号：US18185205

申请日：2023-03-16

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Olsen ,  Tobin Kaufman-Osborn

IPC: H01L21/02 ,  H10B41/50 ,  H10B43/50

Abstract: Methods of forming an oxide layer over a semiconductor substrate are provided. The method includes forming a first oxide containing portion of the oxide layer over a semiconductor substrate at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature. A second oxide containing portion is formed over the substrate at a second growth rate by exposing the substrate to a second gas mixture having a second oxygen percentage at a second temperature. A third oxide containing portion is formed over the substrate at a third growth rate by exposing the substrate to a third gas mixture having a third oxygen percentage at a third temperature. The first growth rate is slower than each subsequent growth rate and each growth rate subsequent to the second growth rate is within 50% of each other.

公开(公告)号：US11697875B2

公开(公告)日：2023-07-11

申请号：US16662134

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Eric Kihara Shono ,  Kartik Shah ,  Christopher S. Olsen ,  Agus Sofian Tjandra ,  Tobin Kaufman-Osborn ,  Taewan Kim ,  Hansel Lo

IPC: C23C16/452 ,  C23C16/455 ,  B01F23/10 ,  B01F25/421 ,  H01J37/32 ,  B01F25/10 ,  B01F25/314 ,  B01F35/511 ,  H01L21/67

CPC classification number: C23C16/452 ,  B01F23/10 ,  B01F23/19 ,  B01F25/102 ,  B01F25/3141 ,  B01F25/31423 ,  B01F25/421 ,  B01F35/511 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45561 ,  H01J37/3244 ,  H01J37/32357 ,  H01L21/67017

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

公开(公告)号：US11501945B2

公开(公告)日：2022-11-15

申请号：US17102051

申请日：2020-11-23

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Hansel Lo ,  Agus Sofian Tjandra ,  Taewan Kim ,  Tobin Kaufman-Osborn

IPC: H01J37/04 ,  H01L21/67 ,  H01J37/32 ,  H01J37/20

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

公开(公告)号：US10954594B2

公开(公告)日：2021-03-23

申请号：US14957440

申请日：2015-12-02

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Qiwei Liang ,  Tobin Kaufman-Osborn ,  Ludovic Godet ,  Srinivas D. Nemani

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  C23C16/455

Abstract: The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

公开(公告)号：US10134585B2

公开(公告)日：2018-11-20

申请号：US14830131

申请日：2015-08-19

Applicant: The Regents of the University of California ,  GLOBALFOUNDRIES, Inc. ,  Applied Materials, Inc.

Inventor： Kasra Sardashti ,  Tobin Kaufman-Osborn ,  Tyler Kent ,  Andrew Kummel ,  Shariq Siddiqui ,  Bhagawan Sahu ,  Adam Brand ,  Naomi Yoshida

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/306 ,  H01L29/94

Abstract: Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S—H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200° C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III-V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200° C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.

公开(公告)号：US11959169B2

公开(公告)日：2024-04-16

申请号：US17958282

申请日：2022-09-30

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67

CPC classification number: C23C16/45517 ,  C23C16/40 ,  C23C16/45563 ,  C23C16/45582 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/67017

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US11735420B2

公开(公告)日：2023-08-22

申请号：US17014975

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/32

CPC classification number: H01L21/0271 ,  H01L21/0206 ,  H01L21/0228 ,  H01L21/02057 ,  H01L21/02181 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/3105 ,  H01L21/67207 ,  H01L21/32 ,  H01L21/6831

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US11610776B2

公开(公告)日：2023-03-21

申请号：US17169866

申请日：2021-02-08

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Olsen ,  Tobin Kaufman-Osborn

IPC: H01L21/02

Abstract: Methods of forming an oxide layer over a semiconductor substrate are provided. The method includes forming a first oxide containing portion of the oxide layer over a semiconductor substrate at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature. A second oxide containing portion is formed over the substrate at a second growth rate by exposing the substrate to a second gas mixture having a second oxygen percentage at a second temperature. A third oxide containing portion is formed over the substrate at a third growth rate by exposing the substrate to a third gas mixture having a third oxygen percentage at a third temperature. The first growth rate is slower than each subsequent growth rate and each growth rate subsequent to the second growth rate is within 50% of each other.

公开(公告)号：US20210189562A1

公开(公告)日：2021-06-24

申请号：US17182906

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US09716005B1

公开(公告)日：2017-07-25

申请号：US15075046

申请日：2016-03-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/285 ,  H01L21/263

CPC classification number: H01L21/263 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0243 ,  H01L21/02639 ,  H01L21/0274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/321

Abstract: Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.