公开(公告)号：US20210383529A1

公开(公告)日：2021-12-09

申请号：US17281948

申请日：2019-10-31

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Roman KRIS ,  Roi MEIR ,  Sahar LEVIN ,  Ishai SCHWARZBAND ,  Grigory KLEBANOV ,  Shimon LEVI ,  Efrat NOIFELD ,  Hiroshi MIROKU ,  Taku YOSHIZAWA ,  Kasturi SAHA ,  Sharon DUVDEVANI-BAR ,  Vadim VERESCHAGIN

IPC: G06T7/00 ,  G06K9/46 ,  G06K9/00 ,  G06T7/60 ,  G06T7/13 ,  G06T7/194 ,  G01N23/225

Abstract: A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.

公开(公告)号：US20170194125A1

公开(公告)日：2017-07-06

申请号：US14985847

申请日：2015-12-31

Applicant: Applied Materials Israel Ltd.

Inventor： Roman KRIS ,  Yakov WEINBERG ,  Yan IVANCHENKO ,  Ishai SCHWARZBAND ,  Dan LANGE ,  Arbel ENGLANDER ,  Efrat NOIFELD ,  Ran GOLDMAN ,  Ori SHOVAL

IPC: H01J37/22 ,  G01N23/225 ,  G01B15/04 ,  H01J37/28

CPC classification number: H01J37/222 ,  G01N23/2251 ,  G01N2223/401 ,  G01N2223/418 ,  G01N2223/6116 ,  G01N2223/646 ,  H01J37/28 ,  H01J2237/24592 ,  H01J2237/2813 ,  H01L22/12

Abstract: A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.