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    Three-dimensional surface metrology of wafers
    1.
    发明授权
    Three-dimensional surface metrology of wafers 有权

    公开(公告)号：US11662324B1

    公开(公告)日：2023-05-30

    申请号：US17698393

    申请日：2022-03-18

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ido Almog ,  Ron Bar-Or ,  Lior Yaron

    IPC: G01N23/22 ,  G01Q60/24 ,  G01N23/2251

    CPC classification number: G01N23/2251 ,  G01Q60/24 ,  G01N2223/07 ,  G01N2223/418 ,  G01N2223/507 ,  G01N2223/6116

    Abstract: A computer-based method for three-dimensional surface metrology of samples based on scanning electron microscopy and atomic force microscopy. The method includes: (i) using a scanning electron microscope (SEM) to obtain SEM data of a set of sites on a surface of a sample; (ii) using an atomic force microscope (AFM) to measure vertical parameters of sites in a calibration subset of the set; (iii) calibrating an algorithm, configured to estimate a vertical parameter of a site when SEM data of the site are fed as inputs, by determining free parameters of the algorithm, such that residuals between the algorithm-estimated vertical parameters and the AFM-measured vertical parameters are about minimized; and (iv) using the calibrated algorithm to estimate vertical parameters of the sites in the complement to the calibration subset.

    SCANNING ELECTRON MICROSCOPY-BASED TOMOGRAPHY OF SPECIMENS
    2.
    发明申请
    SCANNING ELECTRON MICROSCOPY-BASED TOMOGRAPHY OF SPECIMENS 有权

    公开(公告)号：US20240404784A1

    公开(公告)日：2024-12-05

    申请号：US18203034

    申请日：2023-05-29

    Applicant: Applied Materials Israel Ltd.

    Inventor： Itamar Shani ,  Konstantin Chirko ,  Lior Yaron ,  Guy Eytan ,  Guy Shwartz

    IPC: H01J37/28 ,  G06T11/00 ,  G06T11/20

    Abstract: Disclosed herein is a system for non-destructive tomography of specimens. The system includes a scanning electron microscope (SEM) and a processor(s). The SEM is configured to obtain a sinogram of a tested specimen, parameterized by a vector {right arrow over (s)}, by projecting e-beams on the tested specimen, at each of a plurality of projection directions and offsets, and. for each e-beam, measuring a respective intensity of electrons returned from the tested specimen, The processor(s) is configured to obtain a tomographic map, pertaining to the tested specimen, by determining values indicative of components of a vector {right arrow over (t)} defined by an equation W{right arrow over (t)}={right arrow over (s)}. W is a matrix with components wij specifying a contribution of a j-th voxel in a nominal specimen to an i-th element of a nominal sinogram of the nominal specimen. The matrix W accounts for e-beam expansion and attenuation with depth within the nominal specimen.

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