公开(公告)号：US09448253B2

公开(公告)日：2016-09-20

申请号：US14719193

申请日：2015-05-21

Applicant: Applied Materials Israel, Ltd.

Inventor： Konstantin Chirko ,  Alon Litman

IPC: H01J37/00 ,  G01Q60/30 ,  G01Q30/02 ,  H01J37/28

CPC classification number: G01Q60/30 ,  G01Q30/02 ,  H01J37/28 ,  H01J2237/281 ,  H01J2237/2815

Abstract: A system, method and a non-transitory compute readable medium for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, including obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and processing the multiple measurement results to determine a state of the HAR hole.

Abstract translation: 一种用于评估具有纳米尺度宽度并形成在衬底中的高纵横比（HAR）孔的系统，方法和非暂时计算可读介质，包括在照明周期期间通过静电测量装置获得多个测量结果， 包括放置在靠近HAR孔的探针尖端; 其中所述HAR孔内的多个位置在照明周期期间用带电粒子束照射; 并处理多个测量结果以确定HAR孔的状态。

公开(公告)号：US20240404784A1

公开(公告)日：2024-12-05

申请号：US18203034

申请日：2023-05-29

Applicant: Applied Materials Israel Ltd.

Inventor： Itamar Shani ,  Konstantin Chirko ,  Lior Yaron ,  Guy Eytan ,  Guy Shwartz

IPC: H01J37/28 ,  G06T11/00 ,  G06T11/20

Abstract: Disclosed herein is a system for non-destructive tomography of specimens. The system includes a scanning electron microscope (SEM) and a processor(s). The SEM is configured to obtain a sinogram of a tested specimen, parameterized by a vector {right arrow over (s)}, by projecting e-beams on the tested specimen, at each of a plurality of projection directions and offsets, and. for each e-beam, measuring a respective intensity of electrons returned from the tested specimen, The processor(s) is configured to obtain a tomographic map, pertaining to the tested specimen, by determining values indicative of components of a vector {right arrow over (t)} defined by an equation W{right arrow over (t)}={right arrow over (s)}. W is a matrix with components wij specifying a contribution of a j-th voxel in a nominal specimen to an i-th element of a nominal sinogram of the nominal specimen. The matrix W accounts for e-beam expansion and attenuation with depth within the nominal specimen.

公开(公告)号：US20150362524A1

公开(公告)日：2015-12-17

申请号：US14719193

申请日：2015-05-21

Applicant: Applied Materials Israel, Ltd.

Inventor： Konstantin Chirko ,  Alon Litman

IPC: G01Q60/30

CPC classification number: G01Q60/30 ,  G01Q30/02 ,  H01J37/28 ,  H01J2237/281 ,  H01J2237/2815

Abstract: A system, method and a non-transitory compute readable medium for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, including obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and processing the multiple measurement results to determine a state of the HAR hole.

Abstract translation: 一种用于评估具有纳米尺度宽度并形成在衬底中的高纵横比（HAR）孔的系统，方法和非暂时计算可读介质，包括在照明周期期间通过静电测量装置获得多个测量结果， 包括放置在靠近HAR孔的探针尖端; 其中所述HAR孔内的多个位置在照明周期期间用带电粒子束照射; 并处理多个测量结果以确定HAR孔的状态。

公开(公告)号：US10903044B1

公开(公告)日：2021-01-26

申请号：US16789348

申请日：2020-02-12

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Alon Litman ,  Konstantin Chirko ,  Yehuda Zur

IPC: H01J37/28 ,  H01L27/108 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of evaluating a region of a sample that includes an array of holes separated by solid portions. The method includes positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB); injecting a deposition gas onto the sample; scanning, with a first charged particle beam, a portion of the sample that includes a plurality of holes in the array of holes to locally deposit material within the plurality of holes in the scanned portion from the deposition gas; and milling, with the FIB column, the portion of the sample that includes the plurality of holes in which the material was locally deposited.

公开(公告)号：US10714306B2

公开(公告)日：2020-07-14

申请号：US16005278

申请日：2018-06-11

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Konstantin Chirko ,  Orit Hava Armon Hershkovich

IPC: H01J37/26 ,  H01L21/66

Abstract: A system, computer program product and a method for measuring a hole. The method may include charging a vicinity of the hole having a nanometric width; obtaining, multiple electron images of the hole; wherein each electron image is formed by sensing electrons of an electron energy that exceeds an electron energy threshold that is associated with the electron image; wherein electron energy thresholds associated with different electron images of the multiple electron images differ from each other; receiving or generating a mapping between height values and the electron energy thresholds; processing the multiple electron images to provide hole measurements; and generating three dimensional measurements of the hole based on the mapping and the hole measurements.

公开(公告)号：US20190378683A1

公开(公告)日：2019-12-12

申请号：US16005278

申请日：2018-06-11

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Konstantin Chirko ,  Orit Hava Armon Hershkovich

IPC: H01J37/26 ,  H01L21/66

Abstract: A system, computer program product and a method for measuring a hole. The method may include charging a vicinity of the hole having a nanometric width; obtaining, multiple electron images of the hole; wherein each electron image is formed by sensing electrons of an electron energy that exceeds an electron energy threshold that is associated with the electron image; wherein electron energy thresholds associated with different electron images of the multiple electron images differ from each other; receiving or generating a mapping between height values and the electron energy thresholds; processing the multiple electron images to provide hole measurements; and generating three dimensional measurements of the hole based on the mapping and the hole measurements.

公开(公告)号：US09632044B1

公开(公告)日：2017-04-25

申请号：US15059063

申请日：2016-03-02

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Alon Litman ,  Konstantin Chirko

IPC: G01N23/225 ,  H01L21/67 ,  H01L21/66

CPC classification number: G01N23/2251 ,  G01N2223/6116 ,  H01L22/12

Abstract: A method that includes performing multiple test iterations to provide multiple test results; and processing the multiple test results to provide estimates of a conductivity of each of the multiple bottoms segments. The multiple test iterations includes repeating, for each bottom segment of the multiple bottom segments, the steps of: (a) illuminating the bottom segment by a charging electron beam; wherein electrons emitted from the bottom segment due to the illuminating are prevented from exiting the hole; (b) irradiating, by a probing electron beam, an area of an upper surface of the dielectric medium; (c) collecting electrons emitted from the area of the upper surface as a result of the irradiation of the area by the probing electron beam to provide collected electrons; and (d) determining an energy of at least one of the collected electrons to provide a test result.

公开(公告)号：US20240249909A1

公开(公告)日：2024-07-25

申请号：US18099169

申请日：2023-01-19

Applicant: Applied Materials Israel Ltd.

Inventor： Yehuda Zur ,  Konstantin Chirko

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/22 ,  H01J37/305

CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/222 ,  H01J37/3056 ,  H01J2237/31749

Abstract: A method of evaluating, with an evaluation tool that includes a first charged particle column, a region of interest on a sample that includes an array of holes separated by solid portions, the method comprising: positioning the sample such that the region of interest is under a field of view of the first charged particle column; and locally depositing material within the array of holes in the region of interest by: pulsing a flow of deposition gas to the region of interest by turning the flow of the deposition gas ON and then OFF; thereafter, scanning a charged particle beam generated by the first charged particle column across the region of interest; and iteratively repeating the pulsing and scanning steps a plurality of times to locally deposit material within the array of holes in the region of interest.

公开(公告)号：US11953316B2

公开(公告)日：2024-04-09

申请号：US17024578

申请日：2020-09-17

Applicant: Applied Materials Israel Ltd.

Inventor： Rafael Bistritzer ,  Anna Levant ,  Moshe Eliasof ,  Michael Chemama ,  Konstantin Chirko

IPC: H01J37/147 ,  G01B15/02 ,  G01N23/2251

CPC classification number: G01B15/02 ,  G01N23/2251 ,  H01J37/1478 ,  G01N2223/401 ,  G01N2223/6116 ,  G01N2223/6462 ,  H01J2237/1506

Abstract: There is provided a system and a method comprising obtaining a first (respectively second) image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first (respectively second) illumination angle, determining a plurality of height values informative of a height profile of the specimen in the area, the determination comprising solving an optimization problem which comprises a plurality of functions, each function being representative of a difference between data informative of a grey level intensity at a first location in the first image and data informative of a grey level intensity at a second location in the second image, wherein, for each function, the second location is determined with respect to the first location, or conversely, when solving the optimization problem, wherein a distance between the first and the second locations depends on the height profile, and the first and second illumination angles.

公开(公告)号：US11921063B2

公开(公告)日：2024-03-05

申请号：US17382280

申请日：2021-07-21

Applicant: Applied Materials Israel Ltd.

Inventor： Michael Chemama ,  Ron Meiry ,  Moshe Eliasof ,  Lior Yaron ,  Guy Eytan ,  Konstantin Chirko ,  Rafael Bistritzer

IPC: G01N23/2206 ,  G01N23/2251 ,  H01J37/22 ,  H01J37/28 ,  H01L21/66

CPC classification number: G01N23/2206 ,  G01N23/2251 ,  H01J37/222 ,  H01J37/28 ,  H01L22/20 ,  G01N2223/053 ,  G01N2223/303 ,  G01N2223/306 ,  G01N2223/401 ,  G01N2223/418 ,  G01N2223/501 ,  G01N2223/61 ,  G01N2223/6116 ,  G01N2223/66 ,  H01J2237/2802 ,  H01J2237/2806 ,  H01J2237/2815

Abstract: There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.