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公开(公告)号：US20090139957A1
公开(公告)日：2009-06-04
申请号：US12315202
申请日：2008-12-01
申请人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
IPC分类号： B44C1/22
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译： 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。
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公开(公告)号：US08070966B2
公开(公告)日：2011-12-06
申请号：US12315202
申请日：2008-12-01
申请人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
IPC分类号： C25F3/00 , C03C25/68 , H01L21/461
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译： 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。
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公开(公告)号：US08613860B2
公开(公告)日：2013-12-24
申请号：US13248394
申请日：2011-09-29
申请人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
IPC分类号： C25F3/00 , C23F1/00 , C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译： 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。
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公开(公告)号：US07468578B2
公开(公告)日：2008-12-23
申请号：US11442032
申请日：2006-05-27
申请人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
IPC分类号： H01J9/24
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译： 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。
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公开(公告)号：US20060220525A1
公开(公告)日：2006-10-05
申请号：US11442032
申请日：2006-05-27
申请人： Aref Chowdhury , Hock Ng , Richart Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Slusher
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
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公开(公告)号：US20060210993A1
公开(公告)日：2006-09-21
申请号：US11064907
申请日：2005-02-23
申请人： Aref Chowdhury , Hock Ng , Bernard Yurke
发明人： Aref Chowdhury , Hock Ng , Bernard Yurke
CPC分类号： G02B6/124 , B82Y10/00 , B82Y15/00 , B82Y20/00 , G01N33/553 , G01N33/588
摘要： An apparatus includes a substrate and a plurality of DNA oligomers in contact with a top surface of the substrate. The substrate is a polar ferroelectric or a polar compound semiconductor.
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公开(公告)号：US20050269593A1
公开(公告)日：2005-12-08
申请号：US11180350
申请日：2005-07-13
申请人： Aref Chowdhury , Hock Ng , Richart Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Slusher
IPC分类号： H01L21/205 , B81B1/00 , G02B6/122 , H01J1/30 , H01J1/304 , H01J9/02 , H01L21/306 , H01L29/24
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译： 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。
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公开(公告)号：US20120028448A1
公开(公告)日：2012-02-02
申请号：US13248394
申请日：2011-09-29
申请人： Aref Chowdhury , Hock Ng , Richart Elliot Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Elliot Slusher
IPC分类号： H01L21/20
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译： 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。
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公开(公告)号：US20070034858A1
公开(公告)日：2007-02-15
申请号：US11202114
申请日：2005-08-11
申请人： Hock Ng
发明人： Hock Ng
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , H01S5/32341 , H01S5/3412
摘要： An apparatus includes a light-emitting diode. The light-emitting diode has a semiconductor matrix of one or more group III-nitride alloys and quantum dots dispersed inside the matrix. The quantum dots include a group III-nitride alloy different from the one or more group III-nitride alloys of the matrix.
摘要翻译： 一种装置包括发光二极管。 发光二极管具有分散在基体内的一个或多个III族氮化物合金和量子点的半导体矩阵。 量子点包括与基体的一种或多种III族氮化物合金不同的III族氮化物合金。
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公开(公告)号：US20060148139A1
公开(公告)日：2006-07-06
申请号：US11030497
申请日：2005-01-06
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336
CPC分类号： H01L21/823462
摘要： The invention comprises a method of dual oxide gate formation comprising the steps of forming a first gate oxide and forming a second gate oxide using in-situ steam generation oxidation.
摘要翻译： 本发明包括一种双氧化物栅极形成方法，包括以下步骤：使用原位蒸汽发生氧化形成第一栅极氧化物并形成第二栅极氧化物。
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