公开(公告)号：US08298962B2

公开(公告)日：2012-10-30

申请号：US12892008

申请日：2010-09-28

申请人： Arnd Kaelberer ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

发明人： Arnd Kaelberer ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L23/58

CPC分类号： B81C1/00539 ,  B81C1/00619 ,  B81C1/00626 ,  H01L21/30608

摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。

公开(公告)号：US20110014794A1

公开(公告)日：2011-01-20

申请号：US12892008

申请日：2010-09-28

申请人： Arnd KAELBERER ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

发明人： Arnd KAELBERER ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

IPC分类号： H01L21/306

CPC分类号： B81C1/00539 ,  B81C1/00619 ,  B81C1/00626 ,  H01L21/30608

摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。

公开(公告)号：US07834452B2

公开(公告)日：2010-11-16

申请号：US12215655

申请日：2008-06-27

申请人： Arnd Kaelberer ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

发明人： Arnd Kaelberer ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

IPC分类号： H01L21/00

CPC分类号： B81C1/00539 ,  B81C1/00619 ,  B81C1/00626 ,  H01L21/30608

摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。

公开(公告)号：US20090008749A1

公开(公告)日：2009-01-08

申请号：US12215655

申请日：2008-06-27

申请人： Arnd Kaelberer ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

发明人： Arnd Kaelberer ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

IPC分类号： H01L29/04 ,  H01L21/302

CPC分类号： B81C1/00539 ,  B81C1/00619 ,  B81C1/00626 ,  H01L21/30608

摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。

公开(公告)号：US20120049301A1

公开(公告)日：2012-03-01

申请号：US13291350

申请日：2011-11-08

申请人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

发明人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

IPC分类号： H01L29/84

CPC分类号： B81C1/00095 ,  H01L21/76898 ,  H01L23/481

摘要： A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.

摘要翻译： 提出了一种制造微机械部件的方法。 在本上下文中，在衬底中产生具有小于衬底厚度的深度的至少一个沟槽结构。 此外，在基板的第一面上制造或施加绝缘层和填充层。 填充层包括基本上填充沟槽结构的填充材料。 衬底的平面第一侧通过在填充层或绝缘层或衬底的平面内的随后的平坦化产生。 然后完成衬底的第二侧的进一步的平坦化。 还描述了根据该方法制造的微机械部件。

公开(公告)号：US20100133630A1

公开(公告)日：2010-06-03

申请号：US12597137

申请日：2008-04-08

申请人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

发明人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： B81C1/00095 ,  H01L21/76898 ,  H01L23/481

摘要： A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.

摘要翻译： 提出了一种制造微机械部件的方法。 在本上下文中，在衬底中产生具有小于衬底厚度的深度的至少一个沟槽结构。 此外，在基板的第一面上制造或施加绝缘层和填充层。 填充层包括基本上填充沟槽结构的填充材料。 衬底的平面第一侧通过在填充层或绝缘层或衬底的平面内的随后的平坦化产生。 然后完成衬底的第二侧的进一步的平坦化。 还描述了根据该方法制造的微机械部件。

公开(公告)号：US20100089868A1

公开(公告)日：2010-04-15

申请号：US12450659

申请日：2008-04-08

申请人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

发明人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

IPC分类号： B81C1/00 ,  B44C1/22

CPC分类号： B81C1/00333 ,  B81B2203/033 ,  B81C1/0015 ,  B81C2201/0197

摘要： A method for producing a micromechanical component is proposed, a trench structure being substantially completely filled up by a first filler layer, and a first mask layer being applied on the first filler layer, on which in turn a second filler layer and a second mask layer are applied. A micromechanical component is also proposed, the first filler layer filling up the trench structure of the micromechanical component and at the same time forming a movable sensor structure.

摘要翻译： 提出了一种用于制造微机械部件的方法，其中沟槽结构基本上被第一填充层完全填充，第一掩模层被施加在第一填料层上，第二掩模层又在第二填料层和第二掩模层 被应用。 还提出了微机械部件，第一填充层填充微机械部件的沟槽结构，同时形成可移动的传感器结构。

公开(公告)号：US08564078B2

公开(公告)日：2013-10-22

申请号：US13291350

申请日：2011-11-08

申请人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

发明人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

IPC分类号： H01L29/84

CPC分类号： B81C1/00095 ,  H01L21/76898 ,  H01L23/481

摘要： A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.

摘要翻译： 提出了一种制造微机械部件的方法。 在本上下文中，在衬底中产生具有小于衬底厚度的深度的至少一个沟槽结构。 此外，在基板的第一面上制造或施加绝缘层和填充层。 填充层包括基本上填充沟槽结构的填充材料。 衬底的平面第一侧通过在填充层或绝缘层或衬底的平面内的随后的平坦化产生。 然后完成衬底的第二侧的进一步的平坦化。 还描述了根据该方法制造的微机械部件。

公开(公告)号：US08419957B2

公开(公告)日：2013-04-16

申请号：US12450659

申请日：2008-04-08

申请人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

发明人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

IPC分类号： C03C15/00

CPC分类号： B81C1/00333 ,  B81B2203/033 ,  B81C1/0015 ,  B81C2201/0197

摘要： A method for producing a micromechanical component is proposed, a trench structure being substantially completely filled up by a first filler layer, and a first mask layer being applied on the first filler layer, on which in turn a second filler layer and a second mask layer are applied. A micromechanical component is also proposed, the first filler layer filling up the trench structure of the micromechanical component and at the same time forming a movable sensor structure.

摘要翻译： 提出了一种用于制造微机械部件的方法，其中沟槽结构基本上被第一填充层完全填充，第一掩模层被施加在第一填料层上，第二掩模层又在第二填料层和第二掩模层 被应用。 还提出了微机械部件，第一填充层填充微机械部件的沟槽结构，同时形成可移动的传感器结构。

公开(公告)号：US08181522B2

公开(公告)日：2012-05-22

申请号：US12254113

申请日：2008-10-20

申请人： Roland Scheuerer ,  Heribert Weber

发明人： Roland Scheuerer ,  Heribert Weber

IPC分类号： G01P15/125

CPC分类号： G01P15/0802 ,  G01P15/125

摘要： An acceleration sensor having a mass which is movably supported outside its center of gravity, first electrodes on the mass and second electrodes located at a distance therefrom forming a capacitive sensor in order to determine a change in position of the mass as a function of time. At least one spring element which generates a restoring force when the mass is deflected from its neutral position is provided on the side of the mass facing the capacitive sensor. The mass may be obtained by being exposed from a material layer, and the mass is surrounded, at least at its side faces, by this material.

摘要翻译： 一种加速度传感器，其具有可移动地支撑在其重心外部的质量，质量上的第一电极和距离形成电容传感器的距离之外的第二电极，以便确定作为时间的函数的质量位置的变化。 当质量从其中立位置偏转时产生恢复力的至少一个弹簧元件设置在面向电容传感器的物体侧。 质量可以通过从材料层暴露而获得，并且质量至少在其侧面被该材料包围。