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公开(公告)号：US08298962B2
公开(公告)日：2012-10-30
申请号：US12892008
申请日：2010-09-28
IPC分类号： H01L21/302 , H01L21/461 , H01L23/58
CPC分类号： B81C1/00539 , B81C1/00619 , B81C1/00626 , H01L21/30608
摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。
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公开(公告)号：US20110014794A1
公开(公告)日：2011-01-20
申请号：US12892008
申请日：2010-09-28
IPC分类号： H01L21/306
CPC分类号： B81C1/00539 , B81C1/00619 , B81C1/00626 , H01L21/30608
摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。
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公开(公告)号：US07834452B2
公开(公告)日：2010-11-16
申请号：US12215655
申请日：2008-06-27
IPC分类号： H01L21/00
CPC分类号： B81C1/00539 , B81C1/00619 , B81C1/00626 , H01L21/30608
摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。
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公开(公告)号：US20090008749A1
公开(公告)日：2009-01-08
申请号：US12215655
申请日：2008-06-27
IPC分类号： H01L29/04 , H01L21/302
CPC分类号： B81C1/00539 , B81C1/00619 , B81C1/00626 , H01L21/30608
摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。
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公开(公告)号：US20110108932A1
公开(公告)日：2011-05-12
申请号：US11793853
申请日：2005-11-04
申请人： Hubert Benzel , Stefan Finkbeiner , Frank Fischer , Helmut Baumann , Lars Metzger , Roland Scheuerer , Peter Brauchle , Andreas Feustel , Matthias Neubauer
发明人： Hubert Benzel , Stefan Finkbeiner , Frank Fischer , Helmut Baumann , Lars Metzger , Roland Scheuerer , Peter Brauchle , Andreas Feustel , Matthias Neubauer
CPC分类号： G01L9/0073
摘要： A manufacturing method for producing a micromechanical sensor element which may be produced in a monolithically integrable design and has capacitive detection of a physical quantity is described. In addition to the manufacturing method, a micromechanical device containing such. a sensor element, e.g., a pressure sensor or an acceleration sensor, is described.
摘要翻译： 描述了可以以单片可集成设计制造并具有物理量的电容检测的微机械传感器元件的制造方法。 除了制造方法之外，还含有这样的微机械装置。 描述了传感器元件，例如压力传感器或加速度传感器。
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6.发明授权Sensor with at least one micromechanical structure and method for production thereof 有权具有至少一个微机械结构的传感器及其制造方法公开(公告)号：US06936902B2
公开(公告)日：2005-08-30
申请号：US10168584
申请日：2000-12-14
申请人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
发明人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
CPC分类号： B81C1/00293 , B81B2201/0228 , B81B2207/095 , B81C2201/0115 , B81C2203/0136 , B81C2203/0145
摘要： A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.
摘要翻译： 传感器具有基础晶片，其具有传感器室，与基础晶片的传感器室一体化的至少一个硅基微机械结构，在传感器室的区域中覆盖基础晶片的至少一个覆盖物，所述覆盖物包括： 第一层，其是沉积层并且可蚀刻介质和反应产物，以及作为密封层并位于第一层上方的密封第二层，作为第一层的沉积层在第一层的区域中是可渗透的 传感器室到蚀刻介质和反应产物，用于透过的沉积层具有选自蚀刻开口，多孔区域和两者的结构。
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公开(公告)号：US06271471B1
公开(公告)日：2001-08-07
申请号：US09453267
申请日：1999-12-02
申请人： Manfred Leiter , Kurt Weiblen , Bernhard Lucas , Frank Schatz , Thomas Beez , Juergen Seiz , Helmut Baumann , Herbert Olbrich , Heinz Eisenschmid , Eberhard Moess , Joachim Dutzi , Andreas Kugler
发明人： Manfred Leiter , Kurt Weiblen , Bernhard Lucas , Frank Schatz , Thomas Beez , Juergen Seiz , Helmut Baumann , Herbert Olbrich , Heinz Eisenschmid , Eberhard Moess , Joachim Dutzi , Andreas Kugler
IPC分类号： H02G314
CPC分类号： H01L24/72 , H01L2924/01004 , H01L2924/01005 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01079 , H01L2924/01082 , H01L2924/09701 , H01L2924/10329 , H01L2924/12033 , H01L2924/00
摘要： A housing for an electronic component has a bottom part, a wall part, a cover part which together are adapted to cover the electronic component, a contact spring provided on the cover part for producing an electrical connection with a terminal of the component, the cover part and the contact spring being formed as a one-piece integral element.
摘要翻译： 一种用于电子部件的壳体具有一个底部，一个壁部分，一个适于覆盖电子部件的盖部分，一个设置在该盖部分上的接触弹簧，用于产生与部件端子的电连接， 部分和接触弹簧形成为一体的整体元件。
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公开(公告)号：US6106735A
公开(公告)日：2000-08-22
申请号：US5924
申请日：1998-01-12
申请人： Jurgen Kurle , Kurt Weiblen , Stefan Pinter , Horst Muenzel , Helmut Baumann , Dietrich Schubert , Karl Bender , Markus Lutz
发明人： Jurgen Kurle , Kurt Weiblen , Stefan Pinter , Horst Muenzel , Helmut Baumann , Dietrich Schubert , Karl Bender , Markus Lutz
IPC分类号： H01L29/84 , G01L9/00 , H01L21/306
CPC分类号： G01L19/147 , G01L9/0042 , G01L9/0073 , B29C33/0022 , H01L2924/16235
摘要： A wafer stack with sensor elements hermetically sealed in caverns and a method of fabricating the sensors permitting a reduction in the size of the sensors formed after cutting the wafer stack and also yielding considerable savings in chip area in the manufacture of the wafer stack. The wafer stack includes bonding strips arranged between the individual sensor elements. The wafer stack is diced to form individual sensors by sawing in the middle through the bonding strips.
摘要翻译： 具有密封在洞穴中的传感器元件的晶片叠层和制造传感器的方法允许在切割晶片叠层之后形成的传感器的尺寸减小，并且还在制造晶片叠层时大大节省了芯片面积。 晶片堆叠包括布置在各个传感器元件之间的接合条。 通过在中间通过粘合条切割，将晶片堆叠切成单个传感器。
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9.发明授权Method for manufacturing semiconductor components having micromechanical structures 失效制造具有微机械结构的半导体部件的方法公开(公告)号：US06204086B1
公开(公告)日：2001-03-20
申请号：US09038777
申请日：1998-03-11
申请人： Joerg Muchow , Helmut Baumann
发明人： Joerg Muchow , Helmut Baumann
IPC分类号： H01L2100
CPC分类号： B81C1/00714 , B81B2201/0264 , B81B2203/0127 , G01L9/0042 , G01L9/0055
摘要： A method for manufacturing semiconductor components having micromechanical structures, micromechanical structures being patterned in a wafer for detecting a physical quantity acting on micromechanical structures, and semiconductor components for converting the physical quantity into an electrical signal proportional to the physical quantity being produced. The semiconductor components and the micromechanical structures are defined in a self-aligning manner by process steps acting on one side of the wafer to produce semiconductor components.
摘要翻译： 一种用于制造具有微机械结构的半导体部件的方法，在用于检测作用在微机械结构上的物理量的晶片中图案化的微机械结构以及用于将物理量转换成与正在产生的物理量成比例的电信号的半导体部件。 半导体部件和微机械结构通过作用于晶片一侧的工艺步骤以自对准的方式限定，以制造半导体部件。
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公开(公告)号：US5629538A
公开(公告)日：1997-05-13
申请号：US433576
申请日：1995-05-03
申请人： Uwe Lipphardt , Guenther Findler , Horst Muenzel , Helmut Baumann
发明人： Uwe Lipphardt , Guenther Findler , Horst Muenzel , Helmut Baumann
CPC分类号： G01L19/147 , G01L19/0627 , G01L9/0042
摘要： A semiconductor chip, which is preferably designed as a pressure sensor, has on its rear side one or more depressions in which the pressure is measured by correspondingly designed diaphragms which are coupled to piezosensitive circuits. The surface of the depressions and, optionally, the rear side of the semiconductor chip are coated with a protective layer which ensures that the semiconductor is protected from aggressive media. The protective layer thereby makes it possible to use the sensor universally in acids, lyes or hot gases.
摘要翻译： 优选地设计为压力传感器的半导体芯片在其后侧具有一个或多个凹陷，其中通过相应设计的隔膜耦合压敏电阻来测量压力。 凹部的表面和可选地，半导体芯片的后侧涂覆有保护层，其保护半导体免受侵蚀性介质的侵害。 因此，保护层使得可以将传感器普遍用于酸，碱液或热气体中。
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