Multilayer substrate, manufacturing method for multilayer substrate, and quality control method for multilayer substrate
    1.
    发明授权
    Multilayer substrate, manufacturing method for multilayer substrate, and quality control method for multilayer substrate 有权
    多层基板,多层基板的制造方法以及多层基板的质量控制方法

    公开(公告)号:US08921017B2

    公开(公告)日:2014-12-30

    申请号:US14021392

    申请日:2013-09-09

    IPC分类号: G03F1/44 G03F1/24

    CPC分类号: G03F1/44 G03F1/24 G03F1/42

    摘要: The present invention relates to a multilayer substrate containing a substrate and a multilayer film provided on the substrate, in which a concave or convex fiducial mark that indicates a fiducial position of the multilayer substrate is formed on the surface of the multilayer film on the opposite side to the side of the substrate; and a material of at least a part of the surface of the fiducial mark is different from a material of a most superficial layer of the multilayer film on the opposite side to the side of the substrate.

    摘要翻译: 本发明涉及一种含有基板和多层膜的多层基板,该多层膜设置在基板上,其中在相反侧的多层膜的表面上形成表示多层基板的基准位置的凹凸基准标记 到基底的一侧; 并且基准标记的表面的至少一部分的材料与在基板侧的相对侧上的多层膜的最表层的材料不同。

    MASK BLANK
    2.
    发明申请
    MASK BLANK 审中-公开

    公开(公告)号:US20180239236A1

    公开(公告)日:2018-08-23

    申请号:US15897612

    申请日:2018-02-15

    IPC分类号: G03F1/24

    摘要: A mask blank includes a glass substrate including a first main surface and a second main surface, an absorbing film formed above the first main surface, and a conductive film formed on the second main surface. A reflective film is provided between the absorbing film and the glass substrate. In a surface of the conductive film on an opposite side to the glass substrate, when a surface shape of a square central area having a length of 142 mm and a width of 142 mm excluding a four-sided frame-shaped peripheral area thereof is expressed by the specific formula, flatness of a component obtained by summing all aklPk(x)Pl(y) with the sum of k and l being 3 or more and 25 or less is 20 nm or less.

    Glass substrate for mask blank, mask blank, photomask, and method for manufacturing glass substrate for mask blank

    公开(公告)号:US10146125B2

    公开(公告)日:2018-12-04

    申请号:US15274141

    申请日:2016-09-23

    IPC分类号: G03F1/60 G03F1/48 G03F1/52

    摘要: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by { z ⁡ ( x , y ) = ∑ k = 0 N 1 ⁢ ∑ l = 0 N 2 ⁢ a kl ⁢ P k ⁡ ( x ) ⁢ P l ⁡ ( y ) P k ⁡ ( x ) = 1 2 k ⁢ k ! ⁢ d k dx k ⁡ [ ( x 2 - 1 ) k ] P l ⁡ ( y ) = 1 2 l ⁢ l ! ⁢ d l dy l ⁡ [ ( y 2 - 1 ) l ] . A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

    GLASS SUBSTRATE FOR MASK BLANK, AND METHOD FOR PRODUCING THE SAME
    4.
    发明申请
    GLASS SUBSTRATE FOR MASK BLANK, AND METHOD FOR PRODUCING THE SAME 审中-公开
    用于掩蔽空白的玻璃基板及其制造方法

    公开(公告)号:US20160209742A1

    公开(公告)日:2016-07-21

    申请号:US14989232

    申请日:2016-01-06

    IPC分类号: G03F1/60 B24B37/20

    CPC分类号: G03F1/60 B24B37/20

    摘要: A glass substrate for a mask blank includes two main surfaces facing each other and surfaces to be chamfered. The surfaces to be chamfered are provided peripherally around the two main surfaces. A flatness of one of the main surfaces is 100 nm or less. On the surface to be chamfered from which substrate corner parts are excluded, each of the substrate corner part being portions where a distance from an outer end of a two-dimensional projection profile of the one of the main surfaces and the surface to be chamfered is within 10 mm, a waviness measured in a range of 2 mm at an arbitrary part in a direction parallel to one side closest to the surface to be chamfered in the two-dimensional projection profile is 50 nm or less.

    摘要翻译: 用于掩模坯料的玻璃基板包括彼此面对的两个主表面和要倒角的表面。 要倒角的表面围绕两个主表面设置。 主表面之一的平坦度为100nm以下。 在不排除基板角部的被倒角表面上,基板角部是与主表面中的一个主面和被倒角表面的二维突起轮廓的外端的距离的部分为 在10mm以内的情况下,在二维投影轮廓中,在与要倒角的表面最接近的一侧的平行方向的任意部位的2mm的范围内的波纹为50nm以下。

    Glass substrate for mask blank, mask blank, photomask, and method for manufacturing glass substrate for mask blank

    公开(公告)号:US10146126B2

    公开(公告)日:2018-12-04

    申请号:US15879613

    申请日:2018-01-25

    IPC分类号: G03F1/60 G03F1/48 G03F1/52

    摘要: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by the following formulas. A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30. { z ⁡ ( x , y ) = ∑ k = 0 N 1 ⁢ ⁢ ∑ l = 0 N 2 ⁢ ⁢ a kl ⁢ P k ⁡ ( x ) ⁢ P l ⁡ ( y ) P k ⁡ ( x ) = 1 2 k ⁢ k ! ⁢ d k dx k ⁡ [ ( x 2 - 1 ) k ] P l ⁡ ( y ) = 1 2 i ⁢ l ! ⁢ d l dy l ⁡ [ ( y 2 - 1 ) l ]  

    GLASS SUBSTRATE FOR MASK BLANK, MASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING GLASS SUBSTRATE FOR MASK BLANK

    公开(公告)号:US20180149964A1

    公开(公告)日:2018-05-31

    申请号:US15879613

    申请日:2018-01-25

    IPC分类号: G03F1/60 G03F1/48 G03F1/52

    CPC分类号: G03F1/60 G03F1/48 G03F1/52

    摘要: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by the following formulas. A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30. { z  ( x , y ) = ∑ k = 0 N 1   ∑ l = 0 N 2   a kl  P k  ( x )  P l  ( y ) P k  ( x ) = 1 2 k  k !  d k dx k  [ ( x 2 - 1 ) k ] P l  ( y ) = 1 2 i  l !  d l dy l  [ ( y 2 - 1 ) l ]  

    Reflecting mask blank, method for manufacturing reflective mask blank and method for quality control for reflective mask blank
    7.
    发明授权
    Reflecting mask blank, method for manufacturing reflective mask blank and method for quality control for reflective mask blank 有权
    反光罩坯料的制造方法,反光罩坯料的制造方法以及质量控制方法

    公开(公告)号:US08916316B2

    公开(公告)日:2014-12-23

    申请号:US14196572

    申请日:2014-03-04

    摘要: The present invention relates to a reflective mask blank containing in this order, a substrate, a multilayer reflective film that reflects exposure light, and an absorber layer that absorbs the exposure light, in which the reflective mask blank further contains a fiducial mark indicating a reference position of the multilayer reflective film, which is formed in a concave shape or in a convex shape on a surface of the multilayer reflective film or on a surface of one layer formed between the multilayer reflective film and the absorber layer, and the fiducial mark is formed so as to have a reflectivity different from an area surrounding the fiducial mark with respect to a light with a prescribed wavelength and is transferred to a layer formed on the fiducial mark.

    摘要翻译: 本发明涉及一种反光掩模坯料,其中依次包含基板,反射曝光光的多层反射膜和吸收曝光光的吸收层,其中反射掩模板还包含指示基准的基准 在多层反射膜的表面上形成为凹状或凸状的多层反射膜的位置或形成在多层反射膜和吸收层之间的一层的表面上的多层反射膜的位置,基准标记为 形成为具有相对于具有规定波长的光具有与基准标记周围的区域不同的反射率,并被转印到形成在基准标记上的层。