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公开(公告)号：US09638809B2
公开(公告)日：2017-05-02
申请号：US14453768
申请日：2014-08-07
CPC分类号： G01T1/2023 , G01T1/202 , G01T1/208 , G01T3/06
摘要： A combined thermal neutron detector and gamma-ray spectrometer system, including: a first detection medium including a lithium chalcopyrite crystal operable for detecting neutrons; a gamma ray shielding material disposed adjacent to the first detection medium; a second detection medium including one of a doped metal halide, an elpasolite, and a high Z semiconductor scintillator crystal operable for detecting gamma rays; a neutron shielding material disposed adjacent to the second detection medium; and a photodetector coupled to the second detection medium also operable for detecting the gamma rays; wherein the first detection medium and the second detection medium do not overlap in an orthogonal plane to a radiation flux. Optionally, the first detection medium includes a 6LiInSe2 crystal. Optionally, the second detection medium includes a SrI2(Eu) scintillation crystal.
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2.发明授权Method of forming high-dielectric-constant material electrodes comprising sidewall spacers 失效形成包括侧壁间隔物的高介电常数材料电极的方法
公开(公告)号：US5489548A
公开(公告)日：1996-02-06
申请号：US283871
申请日：1994-08-01
IPC分类号： H01L21/02 , H01L29/51 , H01L29/92 , H01L21/283
CPC分类号： H01L29/516 , H01L28/60 , H01L28/55
摘要： Generally, the present invention utilizes a lower electrode comprising a sidewall spacer to form a top surface with rounded corners on which HDC material can be deposited without substantial cracking. An important aspect of the present invention is that the sidewall spacer does not reduce the electrical contact surface area between the lower electrode and the HDC material layer as compared to a similar structure containing a lower electrode without a sidewall spacer. One embodiment of the present invention is a microelectronic structure comprising a supporting layer (e.g. Si substrate 30) having a principal surface, a lower electrode overlying the principal surface of the supporting layer, and a high-dielectric-constant material layer (e.g. BST 44) overlying the top surface of the lower electrode. The lower electrode comprises an adhesion layer (e.g TiN 36), an unreactive layer (e.g. Pt 42), a sidewall spacer (e.g. SiO.sub.2 40) and a top surface, with the sidewall spacer causing the top surface to have a rounded corner. The rounded corner of the top surface minimizes crack formation in the high-dielectric-constant material layer.
摘要翻译： 通常，本发明利用包括侧壁间隔物的下电极来形成具有圆角的顶表面，在其上可沉积HDC材料而没有实质的开裂。 本发明的一个重要方面是，与不含侧壁间隔物的下电极相似的结构相比，侧壁间隔物不会减小下电极和HDC材料层之间的电接触表面积。 本发明的一个实施例是一种微电子结构，其包括具有主表面的支撑层（例如Si衬底30），覆盖在支撑层的主表面上的下电极和高介电常数材料层（例如BST 44 ）覆盖下电极的顶表面。 下电极包括粘合层（例如TiN 36），非反应层（例如Pt 42），侧壁间隔物（例如SiO 2 40）和顶表面，侧壁间隔物使顶表面具有圆角。 顶表面的圆角最小化高介电常数材料层中的裂纹形成。
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3.发明授权Method of forming high-dielectric-constant material electrodes comprising conductive sidewall spacers of same material as electrodes 失效形成高介电常数材料电极的方法包括与电极相同材料的导电侧壁间隔物
公开(公告)号：US5605858A
公开(公告)日：1997-02-25
申请号：US483804
申请日：1995-06-07
CPC分类号： H01L29/516 , H01L28/60 , H01L28/55
摘要： Generally, the present invention utilizes a lower electrode comprising a sidewall spacer to form a top surface with rounded corners on which HDC material can be deposited without substantial cracking. An important aspect of the present invention is that the sidewall spacer does not reduce the electrical contact surface area between the lower electrode and the HDC material layer as compared to a similar structure containing a lower electrode without a sidewall spacer. One embodiment of the present invention is a microelectronic structure comprising a supporting layer (e.g. Si substrate 30) having a principal surface, a lower electrode overlying the principal surface of the supporting layer, and a high-dielectric-constant material layer (e.g. BST 44) overlying the top surface of the lower electrode. The lower electrode comprises an adhesion layer (e.g. TiN 36), an unreactive layer (e.g. Pt 42), a sidewall spacer (e.g. SiO.sub.2 40) and a top surface, with the sidewall spacer causing the top surface to have a rounded corner. The rounded corner of the top surface minimizes crack formation in the high-dielectric-constant material layer.
摘要翻译： 通常，本发明利用包括侧壁间隔物的下电极来形成具有圆角的顶表面，在其上可沉积HDC材料而没有实质的开裂。 本发明的一个重要方面是，与不含侧壁间隔物的下电极相似的结构相比，侧壁间隔物不会减小下电极和HDC材料层之间的电接触表面积。 本发明的一个实施例是一种微电子结构，其包括具有主表面的支撑层（例如Si衬底30），覆盖在支撑层的主表面上的下电极和高介电常数材料层（例如BST 44 ）覆盖下电极的顶表面。 下电极包括粘合层（例如TiN 36），非反应层（例如Pt 42），侧壁间隔物（例如SiO 2 40）和顶表面，侧壁间隔物使顶表面具有圆角。 顶表面的圆角最小化高介电常数材料层中的裂纹形成。
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公开(公告)号：US07081371B1
公开(公告)日：2006-07-25
申请号：US10932656
申请日：2004-09-02
IPC分类号： H01L21/36
CPC分类号： C30B23/02 , C30B29/22 , C30B29/52 , H01L21/0242 , H01L21/02472 , H01L21/02488 , H01L21/02507 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02661
摘要： A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al2O3 substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750° C.
摘要翻译： 使用脉冲激光沉积在c面Al 2 O 3 3衬底上制造稳定的宽带隙（约6eV）ZnO / MgO多层薄膜。 ZnO层与MgO层交替。 MgO的厚度为约1nm的常数; ZnO层的厚度从约0.75至2.5nm变化。 从六边形到立方相的突然结构转变遵循ZnO层的厚度在该范围内的减小。 薄膜的带隙也受到多层堆叠的晶体结构的影响。 具有六边形和立方结构的薄膜分别具有3.5和6eV的带隙值。 在六方相中，膜的Mg含量约为40％; 在立方相中Mg含量约为60％。 薄膜稳定，其结构和光学性能不受750℃退火的影响
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公开(公告)号：US5811851A
公开(公告)日：1998-09-22
申请号：US661501
申请日：1996-06-11
IPC分类号： H01L21/02 , H01L31/062 , H01L23/48 , H01L27/108 , H01L29/12
CPC分类号： H01L28/60 , H01L28/55 , H01L28/75 , Y10S257/915
摘要： Generally, according to the present invention, the sidewall of the adhesion layer (e.g. TiN 36) in a lower electrode is pre-oxidized after deposition of an unreactive noble metal layer (e.g. Pt 38) but before deposition of an HDC material (e.g. BST 42). An important aspect of the present invention is that the pre-oxidation of the sidewall generally causes a substantial amount of the potential sidewall expansion (and consequent noble metal layer deformation) to occur before deposition of the HDC material. One embodiment of the present invention is a microelectronic structure comprising a supporting layer having a principal surface, and an adhesion layer overlying the principal surface of the supporting layer, wherein the adhesion layer comprises a top surface and an expanded, oxidized sidewall (e.g. TiO.sub.2 40). The structure further comprises a noble metal layer overlying the top surface of the adhesion layer, wherein the noble metal layer comprises a deformed area overlying the oxidized sidewall, and a high-dielectric-constant material layer overlying the noble metal layer. The high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to the deformed area of the noble metal layer.
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公开(公告)号：US5554866A
公开(公告)日：1996-09-10
申请号：US486120
申请日：1995-06-07
IPC分类号： H01L21/02 , H01L27/108 , G11C11/22 , H01L29/43
CPC分类号： H01L28/60 , H01L28/55 , H01L28/75 , Y10S257/915
摘要： Generally, according to the present invention, the sidewall of the adhesion layer (e.g. TiN 36) in a lower electrode is pre-oxidized after deposition of an unreactive noble metal layer (e.g. Pt 38) but before deposition of an HDC material (e.g. BST 42). An important aspect of the present invention is that the pre-oxidation of the sidewall generally causes a substantial amount of the potential sidewall expansion (and consequent noble metal layer deformation) to occur before deposition of the HDC material. One embodiment of the present invention is a microelectronic structure comprising a supporting layer having a principal surface, and an adhesion layer overlying the principal surface of the supporting layer, wherein the adhesion layer comprises a top surface and an expanded, oxidized sidewall (e.g. TiO.sub.2 40). The structure further comprises a noble metal layer overlying the top surface of the adhesion layer, wherein the noble metal layer comprises a deformed area overlying the oxidized sidewall, and a high-dielectric-constant material layer overlying the noble metal layer. The high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to the deformed area of the noble metal layer.
摘要翻译： 通常，根据本发明，在沉积非反应性贵金属层（例如Pt 38）之后但在沉积HDC材料（例如BST）之前，下电极中的粘附层（例如TiN 36）的侧壁被预氧化 42）。 本发明的一个重要方面是，侧壁的预氧化通常会在沉积HDC材料之前引起大量潜在的侧壁膨胀（并导致贵金属层变形）。 本发明的一个实施例是包括具有主表面的支撑层和覆盖在支撑层的主表面上的粘附层的微电子结构，其中粘附层包括顶表面和膨胀的氧化侧壁（例如TiO 2 40 ）。 所述结构还包括覆盖所述粘合层的顶表面的贵金属层，其中所述贵金属层包括覆盖所述氧化侧壁的变形区域和覆盖所述贵金属层的高介电常数材料层。 高介电常数材料层在贵金属层的变形区域附近基本上没有膨胀应力裂纹。
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7.发明授权
公开(公告)号：US5656852A
公开(公告)日：1997-08-12
申请号：US486565
申请日：1995-06-07
CPC分类号： H01L29/516 , H01L28/60 , H01L28/55
摘要： Generally, the present invention utilizes a lower electrode comprising a sidewall spacer to fore a top surface with rounded comers on which HDC material can be deposited without substantial cracking. An important aspect of the present invention is that the sidewall spacer does not reduce the electrical contact surface area between the lower electrode and the HDC material layer as compared to a similar structure containing a lower electrode without a sidewall spacer. One embodiment of the present invention is a microelectronic structure comprising a supporting layer (e.g. Si substrate 30) having a principal surface, a lower electrode overlying the principal surface of the supporting layer, and a high-dielectric-constant material layer (e.g. BST 44) overlying the top surface of the lower electrode. The lower electrode comprises an adhesion layer (e.g TiN 36), an unreactive layer (e.g. Pt 42), a sidewall spacer (e.g. SiO.sub.2 40) and a top surface, with the sidewall spacer causing the top surface to have a rounded corner. The rounded corner of the top surface minimizes crack formation in the high-dielectric-constant material, layer.
摘要翻译： 通常，本发明使用包括侧壁间隔件的下电极，在顶表面之前具有可以沉积HDC材料而没有实质裂纹的圆角。 本发明的一个重要方面是，与不含侧壁间隔物的下电极相似的结构相比，侧壁间隔物不会减小下电极和HDC材料层之间的电接触表面积。 本发明的一个实施例是一种微电子结构，其包括具有主表面的支撑层（例如Si衬底30），覆盖在支撑层的主表面上的下电极和高介电常数材料层（例如BST 44 ）覆盖下电极的顶表面。 下电极包括粘合层（例如TiN 36），非反应层（例如Pt 42），侧壁间隔物（例如SiO 2 40）和顶表面，侧壁间隔物使顶表面具有圆角。 顶表面的圆角最小化高介电常数材料层中的裂纹形成。
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公开(公告)号：US5554564A
公开(公告)日：1996-09-10
申请号：US283467
申请日：1994-08-01
CPC分类号： H01L28/60 , H01L28/55 , H01L28/75 , Y10S257/915
摘要： An improved method of forming a capacitor electrode for a microelectronic structure such as a dynamic read only memory is disclosed which has a high dielectric constant (HDC) material as a capacitor dielectric. According to an embodiment of the present invention, the sidewall of the adhesion layer (e.g. TiN 36) in a lower electrode is pre-oxidized after deposition of an unreactive noble metal layer (e.g. Pt 38) but before deposition of an HDC material (e.g. BST 42). An important aspect of the present invention is that the pre-oxidation of the sidewall generally causes a substantial amount of the potential sidewall expansion (and consequent noble metal layer deformation) to occur before deposition of the HDC material.
摘要翻译： 公开了一种形成用于诸如动态只读存储器的微电子结构的电容器电极的改进方法，其具有作为电容器电介质的高介电常数（HDC）材料。 根据本发明的实施例，下层电极中的粘附层（例如TiN 36）的侧壁在沉积非反应性贵金属层（例如Pt 38）之后但在沉积HDC材料之前被预氧化（例如， BST 42）。 本发明的一个重要方面是，侧壁的预氧化通常会在沉积HDC材料之前引起大量潜在的侧壁膨胀（并导致贵金属层变形）。
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