摘要:
A structure for use in an energy storage device, the structure comprising a backbone system extending generally perpendicularly from a reference plane, and a population of microstructured anodically active material layers supported by the lateral surfaces of the backbones, each of the microstructured anodically active material layers having a void volume fraction of at least 0.1 and a thickness of at least 1 micrometer.
摘要:
An electrode structure for use in an energy storage device, the electrode structure comprising a population of electrodes, a population of counter-electrodes and an electrically insulating material layer separating members of the electrode population from members of the counter-electrode population, each member of the electrode population having a longitudinal axis AE that is surrounded by the electrically insulating separator layer.
摘要:
A battery includes an anode and a cathode. An electrolyte material is disposed between the anode and the cathode. A separator is disposed between the anode and the cathode. The separator comprises an anodized metal oxide layer having substantially straight and parallel through-pores, wherein the anodized metal oxide of the porous anodized metal oxide layer is selected from the group consisting of aluminum oxide, titanium oxide, zirconium oxide, niobium oxide, tungsten oxide, tantalum oxide, and hafnium oxide.
摘要:
The present invention relates to nonaqueous electrolyte secondary batteries and durable anode materials and anodes for use in nonaqueous electrolyte secondary batteries. The present invention also relates to methods for producing these anode materials. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a displacement solution. The displacement solution contains ions of the metal to be deposited and a dissolution component for dissolving a part of the semiconductor in the anode material. When the anode material is contacted with the displacement solution, the dissolution component dissolves a part of the semiconductor in the anode material thereby providing electrons to reduce the metal ions and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer.