公开(公告)号：US20120115075A1

公开(公告)日：2012-05-10

申请号：US13288365

申请日：2011-11-03

申请人： Atsushi KOMINATO ,  Osamu NOZAWA ,  Hiroyuki IWASHITA ,  Masahiro HASHIMOTO

发明人： Atsushi KOMINATO ,  Osamu NOZAWA ,  Hiroyuki IWASHITA ,  Masahiro HASHIMOTO

IPC分类号： G03F7/20 ,  G03F1/48 ,  G03F1/50

CPC分类号： G03F1/50 ,  G03F1/58

摘要： A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF exposure light is disclosed. The mask blank has a light-shielding film on a transparent substrate. The light-shielding film has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 5.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.

摘要翻译： 公开了一种用于制造适于施加ArF曝光光的转印掩模的掩模坯料。 掩模坯料在透明基板上具有遮光膜。 遮光膜具有至少两层结构，其包括主要由含有过渡金属，硅和氮的材料构成的下层以及主要由含有过渡金属，硅和氮的材料组成的上层。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比率为1.0以上且5.0以下。

公开(公告)号：US20110318674A1

公开(公告)日：2011-12-29

申请号：US13223140

申请日：2011-08-31

申请人： Masahiro HASHIMOTO ,  Hiroyuki IWASHITA ,  Atsushi KOMINATO

发明人： Masahiro HASHIMOTO ,  Hiroyuki IWASHITA ,  Atsushi KOMINATO

IPC分类号： G03F1/14 ,  G03F1/08

CPC分类号： G03F1/32 ,  G03F1/46 ,  G03F1/50

摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.

摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。

公开(公告)号：US20130280646A1

公开(公告)日：2013-10-24

申请号：US13920128

申请日：2013-06-18

申请人： Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Osamu NOZAWA

发明人： Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Osamu NOZAWA

IPC分类号： G03F1/50 ,  G03F7/20 ,  G03F1/00

CPC分类号： G03F1/50 ,  G03F1/00 ,  G03F1/26 ,  G03F1/58 ,  G03F7/20 ,  G03F7/2041 ,  H01L21/266 ,  H01L21/268 ,  H01L21/31138

摘要： A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.

公开(公告)号：US20130230795A1

公开(公告)日：2013-09-05

申请号：US13854439

申请日：2013-04-01

申请人： Hiroyuki IWASHITA ,  Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Hiroaki SHISHIDO

发明人： Hiroyuki IWASHITA ,  Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Hiroaki SHISHIDO

IPC分类号： G03F1/50

CPC分类号： G03F1/50 ,  G03F1/46 ,  G03F1/54

摘要： A photomask blank is for use in manufacturing a photomask to be applied with exposure light having a wavelength of 200 nm or less. The photomask blank has a light-transmitting substrate and a light-shielding film formed thereon. The light-shielding film has a light-shielding layer containing a transition metal and silicon and a front-surface antireflection layer formed contiguously on the light-shielding layer and made of a material containing at least one of oxygen and nitrogen. The light-shielding film has a front-surface reflectance of a predetermined value or less for the exposure light and has a property capable of controlling the change width of the front-surface reflectance at the exposure wavelength to be within 2% when the thickness of the front-surface antireflection layer changes in the range of 2 nm. The material of the front-surface antireflection layer having a refractive index n and an extinction coefficient k capable of achieving such property is selected.

摘要翻译： 光掩模坯料用于制造要施加具有200nm或更小的波长的曝光光的光掩模。 光掩模坯料具有形成在其上的透光性基板和遮光膜。 遮光膜具有含有过渡金属和硅的遮光层和在遮光层上连续形成并由含有氧和氮中的至少一种的材料制成的前表面抗反射层。 遮光膜对于曝光光具有预定值以下的正面反射率，并且具有能够将曝光波长处的前表面反射率的变化宽度控制在2％以内的特性，当厚度为 前表面抗反射层在2nm的范围内变化。 选择具有能够实现这种特性的折射率n和消光系数k的前表面抗反射层的材料。

公开(公告)号：US20120156596A1

公开(公告)日：2012-06-21

申请号：US13327008

申请日：2011-12-15

申请人： Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Hiroyuki IWASHITA

发明人： Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Hiroyuki IWASHITA

IPC分类号： G03F7/00 ,  G03F1/72 ,  B32B7/02 ,  G03F1/00

CPC分类号： G03F1/50 ,  G03F1/00 ,  G03F1/58 ,  G03F1/74 ,  G03F7/2006 ,  Y10T428/24942

摘要： A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more.

摘要翻译： 公开了一种用于制造适于施加ArF准分子激光曝光光的转印掩模的掩模坯料。 掩模坯料在透明基板上具有用于形成转印图案的遮光膜。 所述遮光膜具有从所述透明基板侧起包括下层和上层的至少两层结构。 下层由过渡金属，硅和氮组成的材料制成，氮含量为21原子％以上，折射率n为1.9以下。 上层由过渡金属，硅和氮组成的材料制成，折射率n为2.1以下。 上层的表面层含有氧，氮含量为14原子％以上。

公开(公告)号：US20110171567A1

公开(公告)日：2011-07-14

申请号：US13072571

申请日：2011-03-25

申请人： Osamu NOZAWA ,  Masahiro HASHIMOTO

发明人： Osamu NOZAWA ,  Masahiro HASHIMOTO

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/54

摘要： Problem: There is a demand for a phase shift mask that makes it possible to decrease the film thickness of the phase shift film, can satisfy the requirement relating to pattern accuracy, without collapsing the OPC pattern, and enables control of optical characteristics and pattern defect inspection, and also for a phase shift mask blank as an original plate for such a phase shift mask.Means for solving the problems: A phase shift mask blank of the present invention has, on a transparent substrate, a phase shift film including, as main components, a metal, silicon (Si) and nitrogen (N), having optical characteristics of a transmittance of equal to or greater than 9% and equal to or less than 30% with respect to a wavelength of the ArF excimer laser beam and a phase difference of equal to or greater than 150° and less than 180°, and a light-shielding film formed on the phase shift film. A thickness of the phase shift film is equal to or less than 80 nm, and a refractive index (n) with respect to the wavelength of the ArF excimer laser beam is equal to or greater than 2.3, and an extinction coefficient (k) is equal to or greater than 0.28.

摘要翻译： 问题：需要可以降低相移膜的膜厚的相移掩模，可以满足与图案精度有关的要求，而不会使OPC图案折叠，并且能够控制光学特性和图案缺陷 检查，以及用于这种相移掩模的相移掩模坯料作为原始板。 解决问题的手段本发明的相移掩模毛坯在透明基板上具有包括作为主要成分的金属，硅（Si）和氮（N）的相移膜，其具有光学特性 透射率相对于ArF准分子激光的波长等于或大于9％且等于或小于30％，相位差等于或大于150°且小于180°， 形成在相移膜上的屏蔽膜。 相移膜的厚度等于或小于80nm，并且相对于ArF准分子激光束的波长的折射率（n）等于或大于2.3，消光系数（k）为 等于或大于0.28。

公开(公告)号：US20110177436A1

公开(公告)日：2011-07-21

申请号：US13008356

申请日：2011-01-18

申请人： Masahiro HASHIMOTO ,  Hiroyuki IWASHITA ,  Takahiro HIROMATSU

发明人： Masahiro HASHIMOTO ,  Hiroyuki IWASHITA ,  Takahiro HIROMATSU

IPC分类号： G03F1/00

CPC分类号： G03F1/80 ,  G03F1/54

摘要： A mask blank includes a transparent substrate and a light-shielding film formed on the transparent substrate. The light-shielding film is made of a material composed mainly of a metal that is dry-etchable with a chlorine-based gas. A resist film is used to form a transfer pattern in the light-shielding film. An etching mask film is formed on an upper surface of the light-shielding film and is made of a material containing a transition metal, silicon, and at least one of nitrogen and oxygen. A content ratio of the transition metal to a total of the transition metal and the silicon in the etching mask film is less than 9%.

摘要翻译： 掩模坯料包括形成在透明基板上的透明基板和遮光膜。 遮光膜由主要由可用氯气气体干蚀刻的金属组成的材料制成。 抗蚀剂膜用于在遮光膜中形成转印图案。 在遮光膜的上表面上形成蚀刻掩模膜，并且由含有过渡金属，硅以及氮和氧中的至少一种的材料制成。 过渡金属与蚀刻掩模膜中的过渡金属和硅的总含量比小于9％。

公开(公告)号：US20120251929A1

公开(公告)日：2012-10-04

申请号：US13491957

申请日：2012-06-08

申请人： Osamu NOZAWA ,  Masahiro HASHIMOTO

发明人： Osamu NOZAWA ,  Masahiro HASHIMOTO

IPC分类号： G03F1/26 ,  G03F7/20 ,  B82Y30/00

CPC分类号： G03F1/32 ,  G03F1/54

摘要： A phase shift mask blank having, on a transparent substrate, a phase shift film including, as main components, a metal, silicon (Si) and nitrogen (N), having optical characteristics of a transmittance of equal to or greater than 9% and equal to or less than 30% with respect to a wavelength of the ArF excimer laser beam and a phase difference of equal to or greater than 150° and less than 180°, and a light-shielding film formed on the phase shift film. A thickness of the phase shift film is equal to or less than 80 nrn, a refractive index (n) with respect to the wavelength of the ArF excimer laser beam is equal to or greater than 2.3, and an extinction coefficient (k) is equal to or greater than 0.28.

摘要翻译： 一种相移掩模坯料，其在透明基板上具有包括具有等于或大于9％的透光率的光学特性的金属，硅（Si）和氮（N）作为主要成分的相移膜，以及 相对于ArF准分子激光束的波长和相位差等于或大于150度且小于180度的等于或小于30％，以及形成在相移膜上的遮光膜。 相移膜的厚度等于或小于80nrn，相对于ArF准分子激光束的波长的折射率（n）等于或大于2.3，消光系数（k）相等 大于或等于0.28。

公开(公告)号：US20140127614A1

公开(公告)日：2014-05-08

申请号：US14152788

申请日：2014-01-10

申请人： Masahiro HASHIMOTO ,  Toshiyuki SUZUKI ,  Hiroyuki IWASHITA

发明人： Masahiro HASHIMOTO ,  Toshiyuki SUZUKI ,  Hiroyuki IWASHITA

IPC分类号： G03F1/50

CPC分类号： G03F1/50 ,  G03F1/32 ,  G03F1/54

摘要： A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.

摘要翻译： 用于制造适用于具有200nm以下的波长的曝光光的光掩模的光掩模坯料在透明基板上具有薄膜。 薄膜由含有过渡金属，硅和碳的材料制成，并且包含碳化硅和/或过渡金属碳化物。

公开(公告)号：US20120258388A1

公开(公告)日：2012-10-11

申请号：US13440539

申请日：2012-04-05

申请人： Takeyuki YAMADA ,  Toshiyuki SUZUKI ,  Masahiro HASHIMOTO ,  Yasunori YOKOYA

发明人： Takeyuki YAMADA ,  Toshiyuki SUZUKI ,  Masahiro HASHIMOTO ,  Yasunori YOKOYA

IPC分类号： G03F1/80

CPC分类号： G03F1/68 ,  G03F1/80

摘要： Provided is a mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate. The thin film is made of a material that can be etched by ion-based dry etching. The concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less.

摘要翻译： 提供了一种掩模坯料表面处理方法，用于将具有薄膜的掩模坯料在基板上进行表面处理，使用处理液，将要形成转印图案的薄膜表面进行表面处理。 该薄膜由可以通过基于离子的干蚀刻蚀刻的材料制成。 包含在处理液中的蚀刻抑制剂的浓度为0.3ppb以下。