公开(公告)号：US06613585B2

公开(公告)日：2003-09-02

申请号：US09773987

申请日：2001-02-01

申请人： Atsushi Sakurai ,  Xiao-min Li ,  Kosuke Shiratsuyu

发明人： Atsushi Sakurai ,  Xiao-min Li ,  Kosuke Shiratsuyu

IPC分类号： H01L2100

CPC分类号： H01L28/56

摘要： A ferroelectric thin film device comprises an Si substrate; a TiN thin film whose Ti component is partially replaced with Al, the TiN thin film being formed on the Si substrate; and a ferroelectric thin film of an oxide with a perovskite structure formed on the TiN thin film, wherein the amount of Al atoms present at Ti sites of the TiN thin film after partially replacing Ti with Al is within the range from about 1% to 30% and the oxygen atomic content of the TiN thin film is equal to or less than about 5%.

摘要翻译： 铁电薄膜器件包括Si衬底; Ti组分部分被Al替代的TiN薄膜，在Si衬底上形成TiN薄膜; 以及在TiN薄膜上形成有钙钛矿结构的氧化物的铁电薄膜，其中，在用Al部分地代替Ti之后，存在于TiN薄膜的Ti部位的Al原子的量在约1〜30的范围内 ％，TiN薄膜的氧原子含量等于或小于约5％。

公开(公告)号：US06204525B1

公开(公告)日：2001-03-20

申请号：US09156478

申请日：1998-09-18

申请人： Atsushi Sakurai ,  Xiao-min Li ,  Kosuke Shiratsuyu

发明人： Atsushi Sakurai ,  Xiao-min Li ,  Kosuke Shiratsuyu

IPC分类号： H01L2976

CPC分类号： H01L28/56

摘要： A ferroelectric thin film device comprises an Si substrate; a TiN thin film whose Ti component is partially replaced with Al, the TiN thin film being formed on the Si substrate; and a ferroelectric thin film of an oxide with a perovskite structure formed on the TiN thin film, wherein the amount of Al atoms present at Ti sites of the TiN thin film after partially replacing Ti with Al is within the range from about 1% to 30% and the oxygen atomic content of the TiN thin film is equal to or less than about 5%.

摘要翻译： 铁电薄膜器件包括Si衬底; Ti组分部分被Al替代的TiN薄膜，在Si衬底上形成TiN薄膜; 以及在TiN薄膜上形成有钙钛矿结构的氧化物的铁电薄膜，其中，在用Al部分地代替Ti之后，存在于TiN薄膜的Ti部位的Al原子的量在约1〜30的范围内 ％，TiN薄膜的氧原子含量等于或小于约5％。

公开(公告)号：US06198120B1

公开(公告)日：2001-03-06

申请号：US09249360

申请日：1999-02-12

申请人： Atsushi Sakurai ,  Xiao-min Li ,  Kosuke Shiratsuyu

发明人： Atsushi Sakurai ,  Xiao-min Li ,  Kosuke Shiratsuyu

IPC分类号： H01L2972

CPC分类号： H01L28/75 ,  H01L21/76841 ,  H01L28/55

摘要： A ferroelectric thin film device comprises: a Si substrate; a TiN thin film epitaxially grown on the Si substrate in which Ti is partially substituted by Al; a metal thin film epitaxially grown on the TiN thin film; and a ferroelectric thin film grown and oriented on the metal thin film and composed of an oxide having a perovskite structure. The amount of Al substituted at Ti sites in the TiN thin film is about 1 to 30% in terms of Al atoms, and the oxygen content of the TiN thin film is about 5% or less in terms of oxygen atoms.

摘要翻译： 铁电薄膜器件包括：Si衬底; 外延生长在其中Ti部分被Al取代的Si衬底上的TiN薄膜; 外延生长在TiN薄膜上的金属薄膜; 以及在金属薄膜上生长并定向并由具有钙钛矿结构的氧化物构成的铁电薄膜。 在TiN薄膜的Ti部位取代的Al的量以Al原子换算为1〜30％左右，TiN薄膜的氧含量以氧原子计为5％以下。

公开(公告)号：US09065281B2

公开(公告)日：2015-06-23

申请号：US13208753

申请日：2011-08-12

申请人： Atsushi Sakurai ,  Toshiyuki Koike ,  Kazuaki Sano ,  Fumihiko Maetani

发明人： Atsushi Sakurai ,  Toshiyuki Koike ,  Kazuaki Sano ,  Fumihiko Maetani

IPC分类号： H02J7/00

CPC分类号： H02J7/0034

摘要： Provided is a battery device for controlling charge/discharge of a secondary battery by a single bidirectionally conductive field effect transistor, a charge/discharge control circuit with which a leakage current of the bidirectionally conductive field effect transistor is reduced to perform stable operation. The charge/discharge control circuit includes: a switch circuit for controlling a gate of the bidirectionally conductive field effect transistor based on an output of a control circuit for controlling the charge/discharge of the secondary battery; and two MOS transistors for preventing back-flow of a charge current and a discharge current. The first MOS transistor has a drain and a back gate which are connected to each other, and a source connected to a drain of the bidirectionally conductive field effect transistor. The second MOS transistor has a drain and a back gate which are connected to each other, and a source connected to a source of the bidirectionally conductive field effect transistor.

摘要翻译： 提供一种用于通过单个双向导电场效应晶体管控制二次电池的充电/放电的电池装置，具有双向导电场效应晶体管的漏电流被减小以执行稳定操作的充放电控制电路。 充放电控制电路包括：开关电路，用于基于用于控制二次电池的充电/放电的控制电路的输出来控制双向传导场效应晶体管的栅极; 以及用于防止充电电流和放电电流的反向流动的两个MOS晶体管。 第一MOS晶体管具有彼此连接的漏极和背栅极，以及连接到双向导电场效应晶体管的漏极的源极。 第二MOS晶体管具有彼此连接的漏极和背栅极，以及连接到双向导电场效应晶体管的源极的源极。

公开(公告)号：US08384355B2

公开(公告)日：2013-02-26

申请号：US12874027

申请日：2010-09-01

申请人： Toshiyuki Koike ,  Atsushi Sakurai ,  Kazuaki Sano ,  Wataru Sakamoto ,  Fumihiko Maetani ,  Shohei Tsukamoto

发明人： Toshiyuki Koike ,  Atsushi Sakurai ,  Kazuaki Sano ,  Wataru Sakamoto ,  Fumihiko Maetani ,  Shohei Tsukamoto

IPC分类号： H01M10/46

CPC分类号： H02J7/0031 ,  H01M10/42

摘要： Provided are a battery state monitoring circuit and a battery device that are capable of reliably controlling charge by a charger even if a voltage of a secondary battery drops to around 0 V. In the battery device provided with the battery state monitoring circuit, respective gate voltages of a P-type metal oxide semiconductor (PMOS) transistor and an N-type metal oxide semiconductor (NMOS) transistor, which together form a voltage detection circuit for detecting a voltage of around 0 V of the secondary battery, are applied by a voltage dividing resistor circuit that is connected across terminals of the secondary battery.

摘要翻译： 提供了即使二次电池的电压下降到0V左右，也能够可靠地控制充电器的电池状态监视电路和电池装置。在设置有电池状态监视电路的电池装置中，各自的栅极电压 的P型金属氧化物半导体（PMOS）晶体管和N型金属氧化物半导体（NMOS）晶体管一起形成用于检测二次电池的0V左右的电压的电压检测电路， 分压电阻器连接在二次电池的端子上。

公开(公告)号：US20120229945A1

公开(公告)日：2012-09-13

申请号：US13404478

申请日：2012-02-24

申请人： Atsushi Sakurai ,  Toshiyuki Koike ,  Satoshi Abe

发明人： Atsushi Sakurai ,  Toshiyuki Koike ,  Satoshi Abe

IPC分类号： H02H3/20 ,  H02H3/08

CPC分类号： H02H3/08 ,  H02H7/18 ,  H02J7/0031 ,  H02J7/0072 ,  H02J2007/0039

摘要： There is provided a charge/discharge control circuit and a battery assembly including an accurate overcurrent protecting circuit with low consumption current characteristics. The charge/discharge control circuit comprises a current protecting circuit including: a reference voltage circuit having a reference transistor for detecting overcurrent flowing through a control transistor to turn it on, and a constant current circuit; and a comparison circuit for comparing voltage on the reference voltage circuit with voltage generated by overcurrent flowing through the control transistor, wherein when no overcurrent flows, the electric current flowing through the reference voltage circuit is interrupted to reduce power consumption.

摘要翻译： 提供了一种充电/放电控制电路和包括具有低消耗电流特性的精确过电流保护电路的电池组件。 充放电控制电路包括电流保护电路，该电流保护电路包括：参考电压电路，具有用于检测流过控制晶体管的过电流以使其导通的参考晶体管和恒流电路; 以及用于将参考电压电路上的电压与通过控制晶体管流过的过电流产生的电压进行比较的比较电路，其中当没有过电流流动时，流过参考电压电路的电流被中断以降低功耗。

公开(公告)号：US20120139493A1

公开(公告)日：2012-06-07

申请号：US13292482

申请日：2011-11-09

申请人： Atsushi Sakurai ,  Kazuaki Sano ,  Hiroshi Saito

发明人： Atsushi Sakurai ,  Kazuaki Sano ,  Hiroshi Saito

IPC分类号： H02J7/00

CPC分类号： H02J7/0016

摘要： Provided are a cell balance device with high cell balance performance and high cell balance speed and requiring no high voltage process, and a battery system including the cell balance devices. The cell balance device includes: three terminals to be connected to secondary batteries; one terminal to be connected to a voltage hold device; three switches provided between the three terminals and the one terminal; and a receiving terminal and a transmitting terminal for a synchronization signal. Alternatively, the cell balance device includes: four terminals to be connected to secondary batteries; two terminals to be connected to a voltage hold device; six switches provided between the four terminals and the two terminals; and a receiving terminal and a transmitting terminal for a synchronization signal. The battery system includes: a plurality of secondary batteries; a plurality of voltage hold devices; a plurality of cell balance devices; and a clock generation circuit.

摘要翻译： 提供了具有高电池平衡性能和高电池平衡速度并且不需要高电压处理的电池平衡装置，以及包括电池平衡装置的电池系统。 电池平衡装置包括：三个要连接到二次电池的端子; 一个端子连接到电压保持装置; 三个开关设置在三个端子和一个端子之间; 以及用于同步信号的接收终端和发送终端。 或者，电池平衡装置包括：四个要连接到二次电池的端子; 两个端子连接到电压保持装置; 六个开关设置在四个端子和两个端子之间; 以及用于同步信号的接收终端和发送终端。 电池系统包括：多个二次电池; 多个电压保持装置; 多个电池平衡装置; 和时钟发生电路。

公开(公告)号：US07990669B2

公开(公告)日：2011-08-02

申请号：US12393598

申请日：2009-02-26

申请人： Kiyoshi Yoshikawa ,  Atsushi Sakurai ,  Toshiyuki Koike ,  Kazuaki Sano ,  Yoshihisa Tange

发明人： Kiyoshi Yoshikawa ,  Atsushi Sakurai ,  Toshiyuki Koike ,  Kazuaki Sano ,  Yoshihisa Tange

IPC分类号： H02H3/00

CPC分类号： H02J7/0026

摘要： Provided is a battery protection circuit and a battery device which may be manufactured at lower cost. Before all terminals of a battery protection circuit are each connected to batteries, even when a logical circuit malfunctions by an operation of a parasitic bipolar transistor formed by P-wells due to a connection order in which the batteries are connected, the logical circuit is reset by an operation of a parasitic bipolar transistor formed by the P-wells. For this reason, a charge/discharge path of the batteries is not interrupted due to the connection order. Accordingly, no limitation is placed on the connection order.

摘要翻译： 提供了可以以较低成本制造的电池保护电路和电池装置。 在电池保护电路的所有端子各自连接到电池之前，即使逻辑电路由于由连接电池的连接顺序而由P阱形成的寄生双极晶体管的操作而发生功能，逻辑电路被复位 通过由P阱形成的寄生双极晶体管的操作。 为此，由于连接顺序，电池的充电/放电路径不会中断。 因此，对连接顺序没有限制。

公开(公告)号：US20090185323A1

公开(公告)日：2009-07-23

申请号：US12353719

申请日：2009-01-14

申请人： Kiyoshi Yoshikawa ,  Toshiyuki Koike ,  Shohei Tsukamoto ,  Kazuaki Sano ,  Fumihiko Maetani ,  Wataru Sakamoto ,  Atsushi Sakurai ,  Muneharu Kawana ,  Yoshihisa Tange

发明人： Kiyoshi Yoshikawa ,  Toshiyuki Koike ,  Shohei Tsukamoto ,  Kazuaki Sano ,  Fumihiko Maetani ,  Wataru Sakamoto ,  Atsushi Sakurai ,  Muneharu Kawana ,  Yoshihisa Tange

IPC分类号： H02H5/04

CPC分类号： H02H5/042 ,  G01K3/005

摘要： In order to provide an overheat protection circuit having a small mounting area, the overheat protection circuit includes: a resistor bridge circuit which includes: a plurality of resistors each having a temperature coefficient; an input terminal; and an output terminal; and a comparator circuit connected to the output terminal and the input terminal of the resistor bridge circuit. Parts are each provided in the vicinity of one of the plurality of resistors each having the temperature coefficient, and the comparator circuit outputs an overheat detection signal when a temperature of one of the parts is equal to or higher than an overheat detection temperature. With this structure, a large number of parts can be protected from overheating by a minimum number of overheat protection circuits. Therefore, a circuit scale becomes smaller, and hence a cost for overheat protection becomes lower.

摘要翻译： 为了提供具有小安装面积的过热保护电路，过热保护电路包括：电阻桥电路，其包括：多个电阻器，每个电阻器具有温度系数; 一个输入端; 和输出端子; 以及连接到电阻桥电路的输出端和输入端的比较器电路。 各个部件分别设置在各自具有温度系数的多个电阻器中的一个附近，并且当其中一个部件的温度等于或高于过热检测温度时，比较器电路输出过热检测信号。 通过这种结构，可以通过最少数量的过热保护电路来保护大量的部件免于过热。 因此，电路规模变小，因此过热保护的成本降低。

公开(公告)号：US07501153B2

公开(公告)日：2009-03-10

申请号：US11665833

申请日：2005-10-05

申请人： Naoki Yamada ,  Atsushi Sakurai

发明人： Naoki Yamada ,  Atsushi Sakurai

IPC分类号： C23C16/00 ,  C09D1/00

CPC分类号： C23C16/40 ,  C07C215/08 ,  H01L21/316 ,  H01L21/31691 ,  H01L28/55

摘要： The alkoxide compound of the present invention is represented by general formula (I) below. The alkoxide compound of the present invention is an iron compound that can be delivered in a liquid state and is easily vaporized due to its high vapor pressure. The compound particularly enables production of thin films with excellent composition controllability, and hence is suitable for producing multi-component thin films by CVD. (In the formula, R1 and R2 each independently represent a hydrogen atom or C1-4 alkyl group, R3 and R4 each represent a C1-4 alkyl group, and A represents a C1-8 alkanediyl group.)

摘要翻译： 本发明的烷氧基化合物由下述通式（I）表示。 本发明的烷氧基化合物是一种铁化合物，其可以以液态递送，并且由于其高蒸气压而容易蒸发。 该化合物特别能够制备具有优异组成可控性的薄膜，因此适用于通过CVD制备多组分薄膜。 （式中，R 1和R 2各自独立地表示氢原子或C 1-4烷基，R 3和R 4各自表示C 1-4烷基，A表示碳原子数1〜8的烷二基）