公开(公告)号：US20110263097A1

公开(公告)日：2011-10-27

申请号：US13053959

申请日：2011-03-22

申请人： Atsushi YOSHIMURA ,  Yasuo TANE ,  Yukio KATAMURA ,  Fumihiro IWAMI

发明人： Atsushi YOSHIMURA ,  Yasuo TANE ,  Yukio KATAMURA ,  Fumihiro IWAMI

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386

摘要： According to one embodiment, a method for manufacturing semiconductor device can include forming a groove with a depth shallower than a thickness of a wafer. The method can include attaching a surface protection tape via a first bonding layer provided in the surface protection tape. The method can include grinding a surface of the wafer to divide the wafer into a plurality of semiconductor elements. The method can include forming an element bonding layer by attaching a bonding agent and turning the attached bonding agent into a B-stage state. The method can include attaching a dicing tape via a second bonding layer provided in the dicing tape. The method can include irradiating the first bonding layer with a first active energy ray. The method can include removing the surface protection tape. The method can include irradiating the second bonding layer with a second active energy ray.

摘要翻译： 根据一个实施例，半导体器件的制造方法可以包括形成深度比晶片厚度更深的凹槽。 该方法可以包括通过设置在表面保护带中的第一粘合层附接表面保护带。 该方法可以包括研磨晶片的表面以将晶片分成多个半导体元件。 该方法可以包括通过附着粘合剂形成元件结合层并将附着的粘接剂转化为B阶状态。 该方法可以包括通过设置在切割带中的第二粘合层附着切割带。 该方法可以包括用第一活性能量射线照射第一结合层。 该方法可以包括去除表面保护带。 该方法可以包括用第二活性能量射线照射第二结合层。

公开(公告)号：US20120149151A1

公开(公告)日：2012-06-14

申请号：US13226152

申请日：2011-09-06

申请人： Yasuo TANE ,  Yukio KATAMURA ,  Atsushi YOSHIMURA ,  Fumihiro IWAMI

发明人： Yasuo TANE ,  Yukio KATAMURA ,  Atsushi YOSHIMURA ,  Fumihiro IWAMI

IPC分类号： H01L21/50

CPC分类号： H01L25/50 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/93 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/27312 ,  H01L2224/27848 ,  H01L2224/27901 ,  H01L2224/29016 ,  H01L2224/29017 ,  H01L2224/29018 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32059 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/33183 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2924/00 ,  H01L2224/05599

摘要： According to one embodiment, a method of manufacturing a semiconductor device, a bonding layer is formed on a first surface of a chip region of a semiconductor wafer. Semiconductor chips are singulated along a dicing region. The semiconductor chips are stacked stepwise via the bonding layer. In formation of the bonding layer of the semiconductor chip, in at least a part of a first region of the first surface not in contact with the other semiconductor chip in a stacked state, a projected section where the bonding layer is formed thicker than the bonding layer in a second region that is in contact with the other semiconductor chip is provided.

摘要翻译： 根据一个实施例，制造半导体器件的方法，在半导体晶片的芯片区域的第一表面上形成接合层。 半导体芯片沿切割区域分割。 半导体芯片经由接合层逐级层叠。 在半导体芯片的接合层的形成中，在层叠状态的第一面的第一区域的第一区域与其他半导体芯片不接触的情况下，形成接合层的突出部比形成 提供与另一半导体芯片接触的第二区域中的层。

公开(公告)号：US20120199993A1

公开(公告)日：2012-08-09

申请号：US13233203

申请日：2011-09-15

申请人： Atsushi YOSHIMURA ,  Fumihiro IWAMI

发明人： Atsushi YOSHIMURA ,  Fumihiro IWAMI

IPC分类号： H01L21/78 ,  H01L23/00

CPC分类号： H01L21/78 ,  H01L24/743 ,  H01L2224/743 ,  H01L2924/10158 ,  H01L2924/00

摘要： In one embodiment, an adhesive layer is formed by applying a liquid adhesive to a semiconductor wafer whose wafer shape is maintained by a surface protective film attached to a first surface. A supporting sheet having a tacky layer is attached to a second surface of the semiconductor wafer. After the surface protective film is peeled, the supporting sheet is expanded to cleave the adhesive layer including the adhesive filled into the dicing grooves. The first surface of the semiconductor wafer is cleaned while an expansion state of the supporting sheet is maintained. Tack strength of portions corresponding to the dicing grooves of the tacky layer is selectively reduced before cleaning.

摘要翻译： 在一个实施方案中，通过将液体粘合剂施加到晶片形状由附接到第一表面的表面保护膜保持的半导体晶片形成粘合剂层。 具有粘性层的支撑片附接到半导体晶片的第二表面。 在剥离表面保护膜之后，使支撑片膨胀以将包括填充到切割槽中的粘合剂的粘合剂层切开。 在保持支撑片的膨胀状态的同时清洁半导体晶片的第一表面。 在清洁之前选择性地减少与粘性层的切割槽对应的部分的粘合强度。