摘要:
A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.
摘要:
A method includes providing a semiconductor chip having a first main surface and a layer of solder material deposited on the first main surface, wherein the layer of solder material has a roughness of at least 1 μm. The semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. The semiconductor chip is pressed on the carrier with a pressure of at least 1 Newton per mm2 of surface area of the first main surface and heat is applied to the solder material.
摘要:
An assembly and method of making same are provided. The assembly can include a first component including a dielectric region having an exposed surface, a conductive pad at the surface defined by a conductive element having at least a portion extending in an oscillating or spiral path along the surface, and a an electrically conductive bonding material joined to the conductive pad and bridging an exposed portion of the dielectric surface between adjacent segments. The conductive pad can permit electrical interconnection of the first component with a second component having a terminal joined to the pad through the electrically conductive bonding material. The path of the conductive element may or may not overlap or cross itself.
摘要:
A semiconductor package comprises: a substrate comprising a semiconductor device; a cap comprising a seal ring disposed over a surface of the cap; and a gap between the substrate and the surface of the cap. The seal ring comprises a tread comprising at least two columns.
摘要:
A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.
摘要:
Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, and a die coupled to the package substrate. In an embodiment, a stiffener is around the die and over the package substrate. In an embodiment, an electrically non-conductive underfill is around first level interconnects (FLIs) between the package substrate and the die. In an embodiment, an electrically conductive layer is around the non-conductive underfill.
摘要:
A substrate includes an insulating substrate, a metal layer formed on one surface of the insulating substrate, and an electronic component soldered to the surface of the metal layer. The metal layer is formed of a metal plate. The surface of the metal layer has a soldering area, and a groove portion positioned on the outer periphery of the soldering area.
摘要:
An assembly and method of making same are provided. The assembly can include a first component including a dielectric region having an exposed surface, a conductive pad at the surface defined by a conductive element having at least a portion extending in an oscillating or spiral path along the surface, and a an electrically conductive bonding material joined to the conductive pad and bridging an exposed portion of the dielectric surface between adjacent segments. The conductive pad can permit electrical interconnection of the first component with a second component having a terminal joined to the pad through the electrically conductive bonding material. The path of the conductive element may or may not overlap or cross itself.
摘要:
According to one embodiment, a method of manufacturing a semiconductor device, a bonding layer is formed on a first surface of a chip region of a semiconductor wafer. Semiconductor chips are singulated along a dicing region. The semiconductor chips are stacked stepwise via the bonding layer. In formation of the bonding layer of the semiconductor chip, in at least a part of a first region of the first surface not in contact with the other semiconductor chip in a stacked state, a projected section where the bonding layer is formed thicker than the bonding layer in a second region that is in contact with the other semiconductor chip is provided.
摘要:
An assembly and method of making same are provided. The assembly can include a first component including a dielectric region having an exposed surface, a conductive pad at the surface defined by a conductive element having at least a portion extending in an oscillating or spiral path along the surface, and a an electrically conductive bonding material joined to the conductive pad and bridging an exposed portion of the dielectric surface between adjacent segments. The conductive pad can permit electrical interconnection of the first component with a second component having a terminal joined to the pad through the electrically conductive bonding material. The path of the conductive element may or may not overlap or cross itself.