公开(公告)号：US20240312945A1

公开(公告)日：2024-09-19

申请号：US18674681

申请日：2024-05-24

申请人： LG Display Co., Ltd.

发明人： Chang Hyun SONG ,  Jae Young OH

IPC分类号： H01L23/00 ,  H10K59/131

CPC分类号： H01L24/33 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H10K59/131 ,  H01L2224/08057 ,  H01L2224/29016 ,  H01L2224/32057 ,  H01L2224/32227 ,  H01L2224/32237 ,  H01L2224/3224 ,  H01L2224/3303 ,  H01L2224/33055 ,  H01L2224/33107 ,  H01L2224/33165 ,  H01L2224/33505 ,  H01L2224/33517 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/83906 ,  H01L2224/83939 ,  H01L2224/83951

摘要： An electronic device can include a plurality of pad electrodes provided at at least one side of a substrate, at least one circuit film configured to have a plurality of connection electrodes provided at an insulating film to correspond to the plurality of pad electrodes, a plurality of solders to conductively connect the plurality of connection electrodes to the plurality of pad electrodes exposed from the circuit film one-to-one, and an insulating adhesive to fill spaces between the plurality of pad electrodes and the plurality of connection electrodes. Also, each of the plurality of solders has an edge horizontally protruding from the insulating film.

公开(公告)号：US11978840B2

公开(公告)日：2024-05-07

申请号：US17438953

申请日：2021-07-23

申请人： Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

发明人： Xueru Mei

IPC分类号： H01L33/62 ,  H01L23/00 ,  H01L25/16

CPC分类号： H01L33/62 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L25/167 ,  H01L2224/13016 ,  H01L2224/13021 ,  H01L2224/29016 ,  H01L2224/29028 ,  H01L2224/32145 ,  H01L2924/12041 ,  H01L2933/0066

摘要： Disclosed are a micro light emitting diode display panel, a manufacturing method thereof and a display device. The embodiment micro light emitting diode display panel includes a first metal layer and a second metal layer; the first metal layer includes a source electrode, a drain electrode and a power line; the second metal layer includes a first bonding electrode and a second bonding electrode, and the first bonding electrode is electrically connected to the source electrode through the first via hole, and the second bonding electrode is electrically connected to the power line through the second via hole; the first via hole and the second via hole are both provided with a supporting column.

公开(公告)号：US08691628B2

公开(公告)日：2014-04-08

申请号：US13226152

申请日：2011-09-06

申请人： Yasuo Tane ,  Yukio Katamura ,  Atsushi Yoshimura ,  Fumihiro Iwami

发明人： Yasuo Tane ,  Yukio Katamura ,  Atsushi Yoshimura ,  Fumihiro Iwami

IPC分类号： H01L21/00

CPC分类号： H01L25/50 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/93 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/27312 ,  H01L2224/27848 ,  H01L2224/27901 ,  H01L2224/29016 ,  H01L2224/29017 ,  H01L2224/29018 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32059 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/33183 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2924/00 ,  H01L2224/05599

摘要： According to one embodiment, a method of manufacturing a semiconductor device, a bonding layer is formed on a first surface of a chip region of a semiconductor wafer. Semiconductor chips are singulated along a dicing region. The semiconductor chips are stacked stepwise via the bonding layer. In formation of the bonding layer of the semiconductor chip, in at least a part of a first region of the first surface not in contact with the other semiconductor chip in a stacked state, a projected section where the bonding layer is formed thicker than the bonding layer in a second region that is in contact with the other semiconductor chip is provided.

摘要翻译： 根据一个实施例，制造半导体器件的方法，在半导体晶片的芯片区域的第一表面上形成接合层。 半导体芯片沿切割区域分割。 半导体芯片经由接合层逐级层叠。 在半导体芯片的接合层的形成中，在层叠状态的第一面的第一区域的第一区域与其他半导体芯片不接触的情况下，形成接合层的突出部比形成 提供与另一半导体芯片接触的第二区域中的层。

公开(公告)号：US20120149151A1

公开(公告)日：2012-06-14

申请号：US13226152

申请日：2011-09-06

申请人： Yasuo TANE ,  Yukio KATAMURA ,  Atsushi YOSHIMURA ,  Fumihiro IWAMI

发明人： Yasuo TANE ,  Yukio KATAMURA ,  Atsushi YOSHIMURA ,  Fumihiro IWAMI

IPC分类号： H01L21/50

CPC分类号： H01L25/50 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/93 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/27312 ,  H01L2224/27848 ,  H01L2224/27901 ,  H01L2224/29016 ,  H01L2224/29017 ,  H01L2224/29018 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32059 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/33183 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2924/00 ,  H01L2224/05599

摘要： According to one embodiment, a method of manufacturing a semiconductor device, a bonding layer is formed on a first surface of a chip region of a semiconductor wafer. Semiconductor chips are singulated along a dicing region. The semiconductor chips are stacked stepwise via the bonding layer. In formation of the bonding layer of the semiconductor chip, in at least a part of a first region of the first surface not in contact with the other semiconductor chip in a stacked state, a projected section where the bonding layer is formed thicker than the bonding layer in a second region that is in contact with the other semiconductor chip is provided.

摘要翻译： 根据一个实施例，制造半导体器件的方法，在半导体晶片的芯片区域的第一表面上形成接合层。 半导体芯片沿切割区域分割。 半导体芯片经由接合层逐级层叠。 在半导体芯片的接合层的形成中，在层叠状态的第一面的第一区域的第一区域与其他半导体芯片不接触的情况下，形成接合层的突出部比形成 提供与另一半导体芯片接触的第二区域中的层。

公开(公告)号：US20170098589A1

公开(公告)日：2017-04-06

申请号：US15212113

申请日：2016-07-15

申请人： MediaTek Inc.

发明人： Nai-Wei LIU ,  Tzu-Hung LIN ,  I-Hsuan PENG ,  Ching-Wen HSIAO ,  Wei-Che HUANG

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L23/544

CPC分类号： H01L23/544 ,  H01L21/561 ,  H01L21/568 ,  H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/29016 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/9222 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2924/1431 ,  H01L2924/1432 ,  H01L2924/1436 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/37001

摘要： A semiconductor package structure is provided. The structure includes a molding compound having a dicing lane region. A semiconductor die is disposed in the molding compound and surrounded by the dicing lane region. The semiconductor die has a first surface and a second surface opposite thereto, and the first and second surfaces are exposed from the molding compound. The structure further includes a redistribution layer (RDL) structure disposed on the first surface of the semiconductor die and covering the molding compound. The RDL structure includes a photo-sensitive material and has an opening aligned with the dicing lane region.

公开(公告)号：US20160064350A1

公开(公告)日：2016-03-03

申请号：US14834569

申请日：2015-08-25

申请人： Robert Bosch GmbH

发明人： Christiane Frueh ,  Andreas Fix

IPC分类号： H01L23/00 ,  B23K35/30 ,  B23K35/02 ,  B23K1/00 ,  B23K1/19

CPC分类号： H01L24/32 ,  B23K1/0008 ,  B23K1/19 ,  B23K35/025 ,  B23K35/3006 ,  B23K2103/08 ,  B23K2103/56 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/83 ,  H01L2224/26125 ,  H01L2224/26155 ,  H01L2224/27013 ,  H01L2224/2732 ,  H01L2224/29016 ,  H01L2224/29076 ,  H01L2224/29105 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/30515 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8392 ,  H01L2224/83948 ,  H01L2224/83951 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1203 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/3512 ,  H01L2924/00

摘要： A connection arrangement includes at least one electric and/or electronic component. The at least one electric and/or electronic component has at least one connection face, which is connected in a bonded manner to a join partner by means of a connection layer. The connection layer can for example be an adhesive, soldered, welded, sintered connection or another known connection that connects joining partners while forming a material connection. Furthermore, a reinforcement layer is arranged adjacent to the connection layer in a bonded manner. The reinforcement layer has a higher modulus of elasticity than the connection layer. A particularly good protective effect is achieved if the reinforcement layer is formed in a frame-like manner by an outer and an inner boundary and, at least with the outer boundary thereof, encloses the connection face of the at least one electric and/or electronic component.

摘要翻译： 连接装置包括至少一个电和/或电子部件。 所述至少一个电气和/或电子部件具有至少一个连接面，所述至少一个连接面通过连接层以接合的方式连接到连接对象。 连接层可以例如是形成材料连接的粘合剂，焊接，焊接，烧结连接或连接连接伙伴的另一已知连接。 此外，加强层以接合的方式邻近连接层设置。 加强层具有比连接层更高的弹性模量。 如果加强层通过外边界和内边界以框架形式形成，并且至少其外边界包围至少一个电和/或电子的连接面，则获得了特别好的保护效果 零件。

公开(公告)号：US20150014865A1

公开(公告)日：2015-01-15

申请号：US14377895

申请日：2013-01-25

申请人： Robert Bosch GmbH

发明人： Christiane Frueh ,  Andreas Fix

IPC分类号： H01L23/00

CPC分类号： H01L24/32 ,  B23K1/0008 ,  B23K1/19 ,  B23K35/025 ,  B23K35/3006 ,  B23K2103/08 ,  B23K2103/56 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/83 ,  H01L2224/26125 ,  H01L2224/26155 ,  H01L2224/27013 ,  H01L2224/2732 ,  H01L2224/29016 ,  H01L2224/29105 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/30515 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8392 ,  H01L2224/83948 ,  H01L2224/83951 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1203 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/3512 ,  H01L2924/00

摘要： The connection arrangement (100, 200, 300, 400) comprises at least one electric and/or electronic component (1). The at least one electric and/or electronic component (10) has at least one connection face (11), which is connected in a bonded manner to a join partner (40) by means of a connection layer (20). The connection layer (20) can for example be an adhesive, soldered, welded, sintered connection or another known connection that connects joining partners while forming a material connection. Furthermore, a reinforcement layer (30′) is arranged adjacent to the connection layer (20) in a bonded manner. The reinforcement layer (30′) has a higher modulus of elasticity than the connection layer (20). A particularly good protective effect is achieved if the reinforcement layer (30′) is formed in a frame-like manner by an outer and an inner boundary (36, 35) and, at least with the outer boundary (36) thereof, encloses the connection face (11) of the at least one electric and/or electronic component (10).

摘要翻译： 连接装置（100,200,300,400）包括至少一个电和/或电子部件（1）。 所述至少一个电和/或电子部件（10）具有至少一个连接面（11），所述至少一个连接面（11）通过连接层（20）以接合方式连接到接合对象（40）。 连接层（20）可以例如是形成材料连接的粘合剂，焊接，焊接，烧结连接或连接连接伙伴的另一已知连接。 此外，加强层（30'）以接合的方式邻近连接层（20）布置。 加强层（30'）具有比连接层（20）更高的弹性模量。 如果加强层（30'）通过外边界和内边界（36,35）以框架状的方式形成，并且至少其外边界（36）包围着，则实现特别好的保护效果 所述至少一个电和/或电子部件（10）的连接面（11）。

公开(公告)号：US20120068325A1

公开(公告)日：2012-03-22

申请号：US13273389

申请日：2011-10-14

申请人： Ruben B. Montez ,  Alex P. Pamatat

发明人： Ruben B. Montez ,  Alex P. Pamatat

IPC分类号： H01L21/50 ,  H01L23/12

CPC分类号： H01L23/10 ,  B81B2207/097 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  H01L21/50 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/02 ,  H01L2224/022 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/04026 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05638 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/29013 ,  H01L2224/29016 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83411 ,  H01L2224/83424 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/83481 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2224/94 ,  H01L2924/10157 ,  H01L2924/15159 ,  H01L2924/164 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/83

摘要： In one embodiment, a semiconductor structure including a first substrate, a semiconductor device on the first substrate, a second substrate, and a conductive bond between the first substrate and the second substrate that surrounds the semiconductor device to seal the semiconductor device between the first substrate and the second substrate. The conductive bond comprises metal, silicon, and germanium. A percentage by atomic weight of silicon in the conductive bond is greater than 5%.

摘要翻译： 在一个实施例中，包括第一衬底，第一衬底上的半导体器件，第二衬底和围绕半导体器件的第一衬底和第二衬底之间的导电结合的半导体结构，以密封半导体器件在第一衬底 和第二基板。 导电键包括金属，硅和锗。 导电键中硅的原子量的百分比大于5％。

公开(公告)号：US08058143B2

公开(公告)日：2011-11-15

申请号：US12356939

申请日：2009-01-21

申请人： Ruben B. Montez ,  Alex P. Pamatat

发明人： Ruben B. Montez ,  Alex P. Pamatat

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L23/10 ,  B81B2207/097 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  H01L21/50 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/02 ,  H01L2224/022 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/04026 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05638 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/29013 ,  H01L2224/29016 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83411 ,  H01L2224/83424 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/83481 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2224/94 ,  H01L2924/10157 ,  H01L2924/15159 ,  H01L2924/164 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/83

摘要： A method that in one embodiment is useful in bonding a first substrate to a second substrate includes forming a layer including metal over the first substrate. The layer including metal in one embodiment surrounds a semiconductor device, which can be a micro electromechanical system (MEMS) device. On the second substrate is formed a first layer comprising silicon. A second layer comprising germanium and silicon is formed on the first layer. A third layer comprising germanium is formed on the second layer. The third layer is brought into contact with the layer including metal. Heat (and pressure in some embodiments) is applied to the third layer and the layer including metal to form a mechanical bond material between the first substrate and the second substrate in which the mechanical bond material is electrically conductive. In the case of the mechanical bond surrounding a semiconductor device such as a MEMS, the mechanical bond can be particularly advantageous as a hermetic seal for protecting the MEMS.

摘要翻译： 在一个实施方案中用于将第一衬底粘合到第二衬底的方法包括在第一衬底上形成包括金属的层。 在一个实施例中包括金属的层围绕半导体器件，其可以是微机电系统（MEMS）器件。 在第二基板上形成包含硅的第一层。 在第一层上形成包括锗和硅的第二层。 在第二层上形成包含锗的第三层。 第三层与包括金属的层接触。 在第三层和包含金属的层上施加热（和一些实施例中的压力）以在第一基板和第二基板之间形成机械接合材料，其中机械接合材料是导电的。 在诸如MEMS之类的半导体器件周围的机械接合的情况下，作为用于保护MEMS的气密密封件，机械结合可能是特别有利的。

公开(公告)号：US20240038795A1

公开(公告)日：2024-02-01

申请号：US18196276

申请日：2023-05-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sang-Uk KIM

IPC分类号： H01L27/146 ,  H01L23/00

CPC分类号： H01L27/14618 ,  H01L24/29 ,  H01L24/32 ,  H01L27/14634 ,  H01L27/14623 ,  H01L27/14685 ,  H01L24/33 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2924/0665 ,  H01L24/45 ,  H01L2224/45144 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48108 ,  H01L2224/48228 ,  H01L24/49 ,  H01L2224/49171 ,  H01L2224/29011 ,  H01L2224/32054 ,  H01L2224/29016 ,  H01L2224/33051 ,  H01L2224/29018 ,  H01L2224/32225 ,  H01L24/73 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2224/3201 ,  H01L2224/32057 ,  H01L24/83 ,  H01L2224/83874 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L24/92 ,  H01L2224/92247 ,  H01L2224/92165 ,  H01L27/14627

摘要： A semiconductor package includes: a package substrate; a semiconductor chip disposed on the package substrate; a transparent substrate disposed on the semiconductor chip; and an adhesive layer that is disposed between the semiconductor chip and the transparent substrate. The adhesive layer is configured to block light. The transparent substrate includes: a first lower side that faces the semiconductor chip, a second lower side that faces the semiconductor chip and that is disposed above the first lower side, and a first inner side wall that connects the first lower side and the second lower side, and the adhesive layer is in contact with the second lower side and the first inner side wall.