摘要:
A photosensitive resin composition is provided that is highly safe, provides a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability. According to a photosensitive resin composition including, in addition to an onium fluorinated alkyl fluorophosphate based cation polymerization initiator having a specific structure, a specified solvent or a specified sensitizing agent as essential components, a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and also is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability.
摘要:
Problem: Providing a photosensitive resin composition that has high sensitivity, sustains a slight shrinkage in volume when cured under heating and can form resist patterns having high-aspect profiles, and a pattern forming method using such a composition.Means for Resolution: A photosensitive resin composition characterized by containing (a) a polyfunctional epoxy resin, (b) a cationic polymerization initiator and (c) an aromatic polycyclic compound as a sensitizer (such as 2,3-dihydroxynaphthalene, 1,5-dihydroxynaphthalene or 2,6-dihydroxynaphthalene), which has at least two substituents capable of forming cross-links with component (a).
摘要:
Problem: Providing a photosensitive resin composition that has high sensitivity, sustains a slight shrinkage in volume when cured under heating and can form resist patterns having high-aspect profiles, and a pattern forming method using such a composition.Means for Resolution: A photosensitive resin composition characterized by containing (a) a polyfunctional epoxy resin, (b) a cationic polymerization initiator and (c) an aromatic polycyclic compound as a sensitizer (such as 2,3-dihydroxynaphthalene, 1,5-dihydroxynaphthalene or 2,6-dihydroxynaphthalene), which has at least two substituents capable of forming cross-links with component (a).
摘要:
A photosensitive resin composition is provided that is highly safe, provides a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability. According to a photosensitive resin composition including, in addition to an onium fluorinated alkyl fluorophosphate based cation polymerization initiator having a specific structure, a specified solvent or a specified sensitizing agent as essential components, a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and also is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability.
摘要:
A photosensitive resin composition capable of controlling occurrence of defects and capable of forming a resist pattern having a favorable configuration, and a method for forming a resist pattern using the same are provided. According to a photosensitive resin composition including, as component (a), a polyfunctional epoxy resin, and, as component (b), a cation polymerization initiator, in which the concentration of propylene carbonate in the photosensitive resin composition is no greater than 10% by mass, the occurrence of defects can be controlled, and a resist pattern having a favorable shape can be formed.
摘要:
A method of forming a precision microspace with given configuration and volume; a process for manufacturing a member having a precision microspace with given configuration and volume; etc. There is provided a method of forming a precision microspace by the step of laying a film on a substratum having a precision microscopic depressed portion, comprising the steps of mounting such a substratum on a first stage and setting a second stage covering the outer circumference of the first stage so that the uppermost face of the second stage is higher than that of the first stage; and laying a film on the substratum to thereby obtain a precision microspace with given configuration and volume.
摘要:
A photosensitive resin composition, which displays superior adhesion with substrates when forming a film and can form fine resin patterns with larger film thicknesses and higher aspect ratios, and a method for forming a pattern using the same are provided. Diphenyl sulfone or derivatives thereof are included into the photosensitive resin composition as an adhesion enhancer. Preferably, the diphenyl sulfone derivative is derived by substituting at least one hydrogen atom of diphenyl sulfone with an amino group, a nitro group, hydroxyl group, carboxyl group, fluorine atom, chlorine atom or acid anhydride.
摘要:
A method of forming a precision microspace with given configuration and volume; a process for manufacturing a member having a precision microspace with given configuration and volume; etc. There is provided a method of forming a precision microspace by the step of laying a film on a substratum having a precision microscopic depressed portion, comprising the steps of mounting such a substratum on a first stage and setting a second stage covering the outer circumference of the first stage so that the uppermost face of the second stage is higher than that of the first stage; and laying a film on the substratum to thereby obtain a precision microspace with given configuration and volume.
摘要:
Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper.
摘要:
Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper.