摘要:
In a jet soldering method, a substrate is held by an actuator and pre-heated by a pre-heater. The pre-heater has a shield member or the substrate is swung to equalize temperature distribution in the substrate. The substrate is then transferred over a primary jet soldering bath while dipping a treatment surface of the substrate in a primary solder jet, so that solder stick to the treatment surface of the substrate. Then, the substrate is transferred over a secondary jet soldering bath while dipping the treatment surface in a secondary solder jet, so that the solder sticking to the substrate is shaped. The transfer conditions of the substrate are differentiated between transfers over the primary jet soldering bath and the secondary jet soldering bath.
摘要:
In a method of soldering a work-piece in a state where the work-piece contacts a wave molten solder, a soldering process is performed while controlling an immersion depth of the work-piece into the wave molten solder to be constant. The immersion depth control is performed by changing one of a height position of the work-piece and a wave height of the wave molten solder based on a displacement amount of the work-piece in a height direction thereof. Accordingly, the soldering process can be performed with high quality even when the work-piece is thermally warped.
摘要:
In a method of soldering a work-piece in a state where the work-piece contacts a wave molten solder, a soldering process is performed while controlling an immersion depth of the work-piece into the wave molten solder to be constant. The immersion depth control is performed by changing one of a height position of the work-piece and a wave height of the wave molten solder based on a displacement amount of the work-piece in a height direction thereof. Accordingly, the soldering process can be performed with high quality even when the work-piece is thermally warped.
摘要:
In a flow soldering apparatus, a substrate is clamped by a pair of nails of a chuck mechanism and transferred over a molten solder barrel while being held in contact with a molten solder. The nails are held resiliently to each other, so that the substrate is allowed to expand thermally between the nails without bowing. The chuck mechanism has a scraper nail which extends transversely over the entire lateral length of the substrate at the front side of the substrate in a substrate transfer direction to push away an oxide film formed on the molten solder. The chuck mechanism is constructed to allow the molten solder to enter underneath the substrate in the lateral direction with respect to the substrate transfer direction. After completing one soldering operation, the nails change the set of the opposing two sides to another set of two opposing sides of the substrate, so that the substrate is subjected to the soldering operation from a direction different from the preceding soldering operation.
摘要:
Provided is an organic electroluminescent member comprising: a positive electrode and a negative electrode on a substrate; multiple organic layers which include at least a positive hole transport layer, a light-emitting layer and an electron transport layer, and which are arranged between the positive electrode and the negative electrode; and an electron injection layer arranged between the electron transport layer and the negative electrode. The electron injection layer is formed from at least one selected from the group consisting of alkali metals and compounds containing alkali metals having melting point of less than 90° C., and at least one selected from the group consisting of alkali metals, alkaline earth metals, compounds containing alkali metals, and compounds containing
摘要:
Systems and methods for programming data to a memory device (MD). The methods involve receiving the data at MD (100) from an external data source. MD includes a memory cell array (MCA) for storing the data including numbers in data blocks (DB) or memory cell array planes (MCAP). Each DB (122a, 122b, 122c, 122d) and MCAP (1020a, 1020b, 1020c, 1020d) includes memory addresses (Ads) corresponding to locations of respective transistor circuits (2021, 2022, . . . , 202n, . . . , 202m) within the MCA (120, 1020a, 1020b, 1020c, 1020d). Two or more of the transistor circuits have different threshold voltages (TVs) with respect to each other. The methods further involve programming the data to each DB or MCAP in accordance with a first mode. In the first mode, each number is programmed to a different MA of each DB or MCAP based at least in part on the different TVs.
摘要:
There is provided an oscillator circuit including: a current source; a resonant unit; an oscillation amplification unit connected to the current source and connected in parallel to the resonant unit; a feedback resistor connected in parallel to the oscillation amplification unit; a switch unit having a first end connected to the current source side of the oscillation amplification unit; a replica circuit connected between a second end of the switch unit and a ground side of the oscillation amplification unit and having a configuration identical to a configuration of the oscillation amplification unit; and a level detecting unit that detects an input voltage of the oscillation amplification unit, and, when the detected input voltage is higher than a bias voltage level at a time of oscillation, cause the switch unit to allow a current from the current sources to bypass through the replica circuit.
摘要:
A fuel cell stack comprising: a cell stack body having stacked single cells and a manifold for supplying or discharging a fluid to the stacked single cells, the single cell including a membrane electrode assembly and a separator sandwiching the membrane electrode assembly; an end plate stacked onto the cell stack body and having a through-hole along the stacking direction of the cell stack body; and a fluid tube body inserted detachably into the through-hole so as to pass through the end plate, the fluid tube body being connected to the manifold, wherein a part of the outer surface of the fluid tube body opposite to the inner surface of the through-hole is separated from the inner surface of the through-hole.
摘要:
A semiconductor device has a plurality of bit lines BL provided in a memory cell area 101, a plurality of word lines WL provided crossing the plurality of bit lines BL, a plurality of diffusion source lines VSL provided along the plurality of word lines WL, a plurality of non-volatile active cells AC storing data, the plurality of non-volatile active cells AC being provided at cross sections of the plurality of bit lines BL and the plurality of word lines WL and being connected to the plurality of bit lines BL, the plurality of word lines WL, and the plurality of diffusion source lines VSL, and a controller simultaneously writes or reads data to and from at least two active cells AC among the plurality of active cells AC, in which the number of the plurality of active cells AC is less than that of the cross sections.
摘要:
An input/output circuit has an output terminal, a first transistor, a second transistor, a pulse generator, and a bias circuit. The first transistor drives the output terminal based on a predetermined signal. The second transistor controls a potential of the gate of the first transistor. The pulse generator outputs a pulse with a predetermined time width when a level of the predetermined signal changes. The bias circuit generates a bias voltage for controlling the second transistor when the pulse is outputted, and impressing the bias voltage to the gate of the second transistor.