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1.发明授权Semiconductor lasers and etched-facet integrated devices having H-shaped windows 有权半导体激光器和具有H形窗口的蚀刻小面集成器件公开(公告)号：US08982921B2
公开(公告)日：2015-03-17
申请号：US13761911
申请日：2013-02-07
发明人： Ruiyu Fang , Giammarco Rossi , Alessandro Stano , Giuliana Morello , Paola-Ida Gotta , Roberto Paoletti , Pietro Della Casa , Giancarlo Meneghini
CPC分类号： H01L33/46 , H01S5/0201 , H01S5/028 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1082 , H01S5/1085 , H01S5/16 , H01S5/20 , H01S5/22
摘要： An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.
摘要翻译： 边缘发射光学半导体结构具有衬底，形成在衬底上的活性多量子阱（MQW）区域和在第一和第二蚀刻端面之间延伸的脊形波导。 第一蚀刻端面设置在第一窗口中，而第二蚀刻端面设置在第二窗口中。 第一刻蚀的端面在第一窗口中的一对凹室之间延伸，并且第二蚀刻端面在第二窗口中的一对凹室之间延伸。 其中提供两个这样的结构的集成装置具有两个结构彼此邻接的H形窗。 该结构可以使用涉及第一掩模以形成脊波导的方法制造，然后是第二掩模和蚀刻工艺以形成窗口。
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公开(公告)号：US08927306B2
公开(公告)日：2015-01-06
申请号：US13781129
申请日：2013-02-28
发明人： Ruiyu Fang , Giuliana Morello , Giammarco Rossi , Roberto Paoletti , Alessandro Stano , Giancarlo Meneghini
CPC分类号： H01L33/06 , H01S5/0201 , H01S5/0282 , H01S5/1082 , H01S5/2202 , H01S5/343 , H01S2301/176
摘要： An edge-emitting etched-facet optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet and a waveguide second etched end facet. A mask layer used to form windows in which the etched end facets are disposed consists of a single dielectric material disposed directly on the ridge waveguide. An optical coating consisting of no more than one layer of the same dielectric material of which the second mask is made is disposed directly on the second mask and disposed directly on the windows to coat the etched end facets.
摘要翻译： 边缘发射蚀刻小面光学半导体结构具有衬底，形成在衬底上的有源多量子阱（MQW）区域和形成在MQW区域上的脊形波导，该脊波导基本沿纵向方向延伸到波导第一蚀刻端面 和波导第二蚀刻端面。 用于形成蚀刻的端面的窗口的掩模层由直接设置在脊波导上的单个电介质材料组成。 由不超过一层的相同电介质材料构成的第二掩模组成的光学涂层直接设置在第二掩模上并且直接设置在窗户上以涂覆蚀刻的端面。
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3.发明申请公开(公告)号：US20140239250A1
公开(公告)日：2014-08-28
申请号：US13781129
申请日：2013-02-28
发明人： Ruiyu Fang , Giuliana Morello , Giammarco Rossi , Roberto Paoletti , Alessandro Stano , Giancarlo Meneghini
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01S5/0201 , H01S5/0282 , H01S5/1082 , H01S5/2202 , H01S5/343 , H01S2301/176
摘要： An edge-emitting etched-facet optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet and a waveguide second etched end facet. A mask layer used to form windows in which the etched end facets are disposed consists of a single dielectric material disposed directly on the ridge waveguide. An optical coating consisting of no more than one layer of the same dielectric material of which the second mask is made is disposed directly on the second mask and disposed directly on the windows to coat the etched end facets.
摘要翻译： 边缘发射蚀刻小面光学半导体结构具有衬底，形成在衬底上的有源多量子阱（MQW）区域和形成在MQW区域上的脊形波导，该脊波导基本沿纵向方向延伸到波导第一蚀刻端面 和波导第二蚀刻端面。 用于形成蚀刻的端面的窗口的掩模层由直接设置在脊波导上的单个电介质材料组成。 由不超过一层的相同电介质材料构成的第二掩模组成的光学涂层直接设置在第二掩模上并且直接设置在窗户上以涂覆蚀刻的端面。
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4.发明申请SEMICONDUCTOR LASERS AND ETCHED-FACET INTEGRATED DEVICES HAVING H-SHAPED WINDOWS 有权具有H型窗口的半导体激光器和蚀刻面积集成器件公开(公告)号：US20140219305A1
公开(公告)日：2014-08-07
申请号：US13761911
申请日：2013-02-07
发明人： Ruiyu Fang , Giammarco Rossi , Alessandro Stano , Giuliana Morello , Paola-Ida Gotta , Roberto Paoletti , Pietro Della Casa , Giancarlo Meneghini
CPC分类号： H01L33/46 , H01S5/0201 , H01S5/028 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1082 , H01S5/1085 , H01S5/16 , H01S5/20 , H01S5/22
摘要： An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.
摘要翻译： 边缘发射光学半导体结构具有衬底，形成在衬底上的活性多量子阱（MQW）区域和在第一和第二蚀刻端面之间延伸的脊形波导。 第一蚀刻端面设置在第一窗口中，而第二蚀刻端面设置在第二窗口中。 第一刻蚀的端面在第一窗口中的一对凹室之间延伸，并且第二蚀刻端面在第二窗口中的一对凹室之间延伸。 其中提供两个这样的结构的集成装置具有两个结构彼此邻接的H形窗。 该结构可以使用涉及第一掩模以形成脊波导的方法制造，然后是第二掩模和蚀刻工艺以形成窗口。
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