利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.024 秒)

    Low-Doped Semi-Insulating Sic Crystals and Method
    3.
    发明申请
    Low-Doped Semi-Insulating Sic Crystals and Method 审中-公开
    低掺杂半绝缘矽晶体和方法

    公开(公告)号：US20080190355A1

    公开(公告)日：2008-08-14

    申请号：US11629584

    申请日：2005-07-06

    申请人： Jihong Chen ,  Ilya Zwieback ,  Avinash K. Gupta ,  Donovan L. Barrett ,  Richard H. Hopkins ,  Edward Semenas ,  Thomas A. Anderson ,  Andrew E. Souzis

    发明人： Jihong Chen ,  Ilya Zwieback ,  Avinash K. Gupta ,  Donovan L. Barrett ,  Richard H. Hopkins ,  Edward Semenas ,  Thomas A. Anderson ,  Andrew E. Souzis

    IPC分类号： C30B33/02 ,  H01B1/02

    CPC分类号： H01L29/1608 ,  C30B23/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02581 ,  H01L21/02631

    摘要： The invention relates to substrates of semi-insulating silicon carbide used for semiconductor devices and a method for making the same. The substrates have a resistivity above 106 Ohm-cm, and preferably above 108 Ohm-cm, and most preferably above 109 Ohm-cm, and a capacitance below 5 pF/mm2 and preferably below 1 pF/mm2. The electrical properties of the substrates are controlled by a small amount of added deep level impurity, large enough in concentration to dominate the electrical behavior, but small enough to avoid structural defects. The substrates have concentrations of unintentional background impurities, including shallow donors and acceptors, purposely reduced to below 5·1016 cm−3, and preferably to below 1·1016 cm−3, and the concentration of deep level impurity is higher, and preferably at least two times higher, than the difference between the concentrations of shallow acceptors and shallow donors. The deep level impurity comprises one of selected metals from the periodic groups IB, IIB, IIIB, IVB, VB, VIB, VIIB and VIIIB. Vanadium is a preferred deep level element. In addition to controlling the resistivity and capacitance, a further advantage of the invention is an increase in electrical uniformity over the entire crystal and reduction in the density of crystal defects.

    摘要翻译： 本发明涉及用于半导体器件的半绝缘碳化硅的衬底及其制造方法。 基板的电阻率高于106欧姆 - 厘米，优选高于108欧姆 - 厘米，最优选高于109欧姆 - 厘米，电容低于5 pF / mm2，最好低于1 pF / mm2。 基板的电学特性由少量的加入的深度杂质控制，其浓度足够大以控制电气行为，但足够小以避免结构缺陷。 底物具有无意的背景杂质浓度，包括浅供体和受体，故意降低至5.1016cm-3以下，优选低于1.1016cm-3，深层杂质的浓度较高，优选至少高两倍 ，比浅受体和浅供体的浓度之间的差异。 深层杂质包括选自周期性基团IB，IIB，IIIB，IVB，VB，VIB，VIIB和VIIIB的金属之一。 钒是首选的深层元素。 除了控制电阻率和电容之外，本发明的另一个优点是在整个晶体上的电均匀性的增加和晶体缺陷密度的降低。

    Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth
    6.
    发明申请
    Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth 有权
    铯晶体生长中的氮气的腔内吸收

    公开(公告)号：US20090169459A1

    公开(公告)日：2009-07-02

    申请号：US12067258

    申请日：2006-09-27

    申请人： Ilya Zwieback ,  Donovan L. Barrett ,  Avinash K. Gupta

    发明人： Ilya Zwieback ,  Donovan L. Barrett ,  Avinash K. Gupta

    IPC分类号： C30B23/00 ,  C01B31/36

    CPC分类号： C30B29/36 ,  C30B23/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02631

    摘要： In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.

    摘要翻译： 在晶体生长方法中，在存在第一真空压力的情况下将晶体生长室（2）的内部加热到第一温度，由此吸收在室内的材料（4）中吸收的至少一种气体被脱气。 然后在存在比第一真空压力更高的第二真空压力的情况下，在第二较高温度下将室的内部暴露于惰性气体。 然后将室中的惰性气体压力减小到第一和第二真空压力之间的第三真空压力，并且室内的温度降低到第一和第二温度之间的第三温度，由此源材料（10 ）蒸发并沉积在室内的晶种（12）上。

    Intra-cavity gettering of nitrogen in SiC crystal growth
    7.
    发明授权
    Intra-cavity gettering of nitrogen in SiC crystal growth 有权
    SiC晶体生长中氮吸收的腔内吸收

    公开(公告)号：US09017629B2

    公开(公告)日：2015-04-28

    申请号：US12067258

    申请日：2006-09-27

    申请人： Ilya Zwieback ,  Donovan L. Barrett ,  Avinash K. Gupta

    发明人： Ilya Zwieback ,  Donovan L. Barrett ,  Avinash K. Gupta

    IPC分类号： C01B31/36 ,  C30B23/00 ,  C30B29/36 ,  H01L21/02

    CPC分类号： C30B29/36 ,  C30B23/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02631

    摘要： In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.

    摘要翻译： 在晶体生长方法中，在存在第一真空压力的情况下将晶体生长室（2）的内部加热到第一温度，由此吸收在室内的材料（4）中吸收的至少一种气体被脱气。 然后在存在比第一真空压力更高的第二真空压力的情况下，在第二较高温度下，将室的内部暴露于惰性气体。 然后将室中的惰性气体压力减小到第一和第二真空压力之间的第三真空压力，并且室内的温度降低到第一和第二温度之间的第三温度，由此源材料（10 ）蒸发并沉积在室内的晶种（12）上。

    Guided diameter SiC sublimation growth with multi-layer growth guide
    8.
    发明授权
    Guided diameter SiC sublimation growth with multi-layer growth guide 有权
    引导直径SiC升华生长与多层生长指导

    公开(公告)号：US08313720B2

    公开(公告)日：2012-11-20

    申请号：US12522549

    申请日：2008-01-15

    申请人： Ilya Zwieback ,  Avinash K. Gupta ,  Edward Semenas ,  Thomas E. Anderson

    发明人： Ilya Zwieback ,  Avinash K. Gupta ,  Edward Semenas ,  Thomas E. Anderson

    IPC分类号： C01B31/36

    CPC分类号： C30B29/36 ,  C30B23/005 ,  C30B35/00

    摘要： In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal.

    摘要翻译： 在SiC锭的生长中，在坩埚的底部装载有SiC源材料的坩埚和坩埚顶部的SiC晶种的生长坩埚内部设置生长引导件。 生长引导件具有限定生长引导件中的开口的至少一部分的内层和支撑坩埚中的内层的外层。 开口面向源材料，晶种位于与源材料相对的开口端。 内层由具有比形成外层的第二不同材料更高的导热性的第一材料形成。 源材料通过生长引导件中的开口在生长坩埚中的晶种上生长升华，从而在晶种上形成SiC棒。

    Reduction of carbon inclusions in sublimation grown SiC single crystals
    9.
    发明申请
    Reduction of carbon inclusions in sublimation grown SiC single crystals 失效
    在升华生长的SiC单晶中减少碳夹杂物

    公开(公告)号：US20080115719A1

    公开(公告)日：2008-05-22

    申请号：US11904593

    申请日：2007-09-27

    申请人： Avinash K. Gupta ,  Edward Semenas ,  Ilya Zwieback

    发明人： Avinash K. Gupta ,  Edward Semenas ,  Ilya Zwieback

    IPC分类号： C30B25/00

    CPC分类号： C30B29/36 ,  C30B23/00

    摘要： In a method of SiC single crystal growth, a SiC single crystal seed and polycrystalline SiC source material are provided in spaced relation inside of a graphite growth crucible along with at least one compound capable of forming SiO gas in the growth crucible. The growth crucible is heated whereupon the gaseous SiO forms and reacts with carbon in the growth crucible thereby avoiding the introduction of carbon into the SiC single crystal before and during the growth thereof and the SiC source material vaporizes and is transported via a temperature gradient in the growth crucible to the seed crystal where it precipitates and forms a SiC single crystal.

    摘要翻译： 在SiC单晶生长方法中，SiC石墨晶种和多晶SiC源材料与石墨生长坩埚中的至少一种能够在生长坩埚中形成SiO气体的化合物一起间隔地设置。 加热生长坩埚，由此气态SiO形成并与生长坩埚中的碳反应，从而避免在生长坩埚之前和期间将碳引入SiC单晶中，并且SiC源材料蒸发并通过温度梯度传送 生长坩埚至晶种沉淀并形成SiC单晶。