公开(公告)号：US08493781B1

公开(公告)日：2013-07-23

申请号：US13192504

申请日：2011-07-28

申请人： Avraham Meir ,  Eyal Gurgi ,  Ronen Dar ,  Naftali Sommer ,  Ofir Shalvi

发明人： Avraham Meir ,  Eyal Gurgi ,  Ronen Dar ,  Naftali Sommer ,  Ofir Shalvi

IPC分类号： H01L27/115

CPC分类号： G11C27/005 ,  G11C11/5628 ,  G11C11/5635 ,  G11C16/3418 ,  G11C2211/5648

摘要： A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells. The data is stored in a first group of the memory cells by programming a second group of the memory cells so as to cause the second group to generate interference in the first group, and individually erasing the first group while verifying that analog levels of the memory cells in the first group subject to the interference are within a predefined bound following erasure. After erasing the first group, the first group of the memory cells is programmed with the data.

摘要翻译： 一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据。 通过对第二组存储器单元进行编程，将数据存储在第一组存储器单元中，以使第二组在第一组中产生干扰，并且在验证存储器的模拟电平的同时单独地擦除第一组 经受干扰的第一组中的单元在擦除之后在预定义的界限内。 擦除第一组后，第一组存储单元用数据编程。

公开(公告)号：US08570804B2

公开(公告)日：2013-10-29

申请号：US13239411

申请日：2011-09-22

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C16/04 ,  G11C16/06 ,  G11C16/10 ,  G11C16/12 ,  G11C16/34 ,  G11C16/26

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

公开(公告)号：US08369141B2

公开(公告)日：2013-02-05

申请号：US12522175

申请日：2008-03-11

申请人： Naftali Sommer ,  Ofir Shalvi ,  Uri Perlmutter ,  Oren Golov ,  Eyal Gurgi ,  Micha Anholt ,  Dotan Sokolov

发明人： Naftali Sommer ,  Ofir Shalvi ,  Uri Perlmutter ,  Oren Golov ,  Eyal Gurgi ,  Micha Anholt ,  Dotan Sokolov

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C16/04 ,  G11C8/20 ,  G11C11/5642 ,  G11C16/20 ,  G11C16/28 ,  G11C2211/5634

摘要： A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.

公开(公告)号：US20120026789A1

公开(公告)日：2012-02-02

申请号：US13239411

申请日：2011-09-22

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C16/06

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

公开(公告)号：US20080282106A1

公开(公告)日：2008-11-13

申请号：US12119069

申请日：2008-05-12

申请人： Ofir Shalvi ,  Dotan Sokolov ,  Eyal Gurgi ,  Oren Golov ,  Naftali Sommer

发明人： Ofir Shalvi ,  Dotan Sokolov ,  Eyal Gurgi ,  Oren Golov ,  Naftali Sommer

IPC分类号： G06F11/16

CPC分类号： G06F11/1068 ,  G11C2029/0411

摘要： A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy.Output encoded data is read and a condition is evaluated. The input data is reconstructed using a decoding level selected, responsively to the condition, from a first level, at which a first part of the output encoded data corresponding to the first section is processed to decode the ECC at the first redundancy, and a second level, at which the first part and a second part of the output encoded data corresponding to the second section are processed jointly to decode the ECC at the second redundancy.

摘要翻译： 一种用于操作存储器的方法包括用错误校正码（ECC）编码输入数据以产生包括第一和第二部分的输入编码数据，使得基于第一冗余部分的第一部分可以解码ECC，并且基于两者 第一和第二部分具有高于第一冗余的第二冗余。 读取输出编码数据并评估条件。 输入数据使用从第一级别选择的解码级别来重构，在第一级别处理对应于第一部分的输出编码数据的第一部分被处理以在第一冗余处解码ECC，以及第二级 级别，其中对应于第二部分的输出编码数据的第一部分和第二部分共同处理，以在第二冗余处对ECC进行解码。

公开(公告)号：US08599611B2

公开(公告)日：2013-12-03

申请号：US13239408

申请日：2011-09-22

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

公开(公告)号：US08234545B2

公开(公告)日：2012-07-31

申请号：US12119069

申请日：2008-05-12

申请人： Ofir Shalvi ,  Dotan Sokolov ,  Eyal Gurgi ,  Oren Golov ,  Naftali Sommer

发明人： Ofir Shalvi ,  Dotan Sokolov ,  Eyal Gurgi ,  Oren Golov ,  Naftali Sommer

IPC分类号： G06F11/00

CPC分类号： G06F11/1068 ,  G11C2029/0411

摘要： A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy.Output encoded data is read and a condition is evaluated. The input data is reconstructed using a decoding level selected, responsively to the condition, from a first level, at which a first part of the output encoded data corresponding to the first section is processed to decode the ECC at the first redundancy, and a second level, at which the first part and a second part of the output encoded data corresponding to the second section are processed jointly to decode the ECC at the second redundancy.

摘要翻译： 一种用于操作存储器的方法包括用错误校正码（ECC）对输入数据进行编码以产生包括第一和第二部分的输入编码数据，使得基于第一冗余部分的第一部分可以解码ECC，并且基于两者 第一和第二部分具有高于第一冗余的第二冗余。 读取输出编码数据并评估条件。 输入数据使用从第一级别选择的解码级别来重构，在第一级别处理对应于第一部分的输出编码数据的第一部分被处理以在第一冗余处解码ECC，以及第二级 级别，其中对应于第二部分的输出编码数据的第一部分和第二部分共同处理，以在第二冗余处对ECC进行解码。

公开(公告)号：US08060806B2

公开(公告)日：2011-11-15

申请号：US11995813

申请日：2007-08-27

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Oren Golov ,  Dotan Sokolov

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Oren Golov ,  Dotan Sokolov

IPC分类号： G11C29/00

CPC分类号： G11C11/5621 ,  G11C16/3418 ,  G11C27/005

摘要： A method for operating a memory (24) includes storing data in analog memory cells (32) of the memory by writing respective analog values to the analog memory cells. A set of the analog memory cells is identified, including an interfered cell having a distortion that is statistically correlated with the respective analog values of the analog memory cells in the set. A mapping is determined between combinations of possible analog values of the analog memory cells in the set and statistical characteristics of composite distortion levels present in the interfered memory cell. The mapping is applied so as to compensate for the distortion in the interfered memory cell.

摘要翻译： 一种用于操作存储器（24）的方法包括通过将相应的模拟值写入模拟存储器单元来将数据存储在存储器的模拟存储器单元（32）中。 识别一组模拟存储器单元，包括具有与组中的模拟存储器单元的相应模拟值统计相关的失真的干扰单元。 在存在于受干扰存储器单元中的复合失真级的集合和统计特性中的模拟存储器单元的可能模拟值的组合之间确定映射。 应用映射以补偿受干扰的存储单元中的失真。

公开(公告)号：US08050086B2

公开(公告)日：2011-11-01

申请号：US11995801

申请日：2007-05-10

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

公开(公告)号：US07924587B2

公开(公告)日：2011-04-12

申请号：US12388528

申请日：2009-02-19

申请人： Uri Perlmutter ,  Shai Winter ,  Ofir Shalvi ,  Eyal Gurgi ,  Naftali Sommer ,  Oren Golov

发明人： Uri Perlmutter ,  Shai Winter ,  Ofir Shalvi ,  Eyal Gurgi ,  Naftali Sommer ,  Oren Golov

IPC分类号： G11C27/00

CPC分类号： G11C11/5628 ,  G11C27/005 ,  G11C29/00

摘要： A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse.

摘要翻译： 一种用于在模拟存储单元中进行数据存储的方法包括定义用于在模拟存储器单元中存储数据的多个编程状态。 编程状态表示多于一个位的相应组合，并且对应于存储在存储器单元中的物理量的相应不同级别。 通过向存储器单元施加编程脉冲将数据存储在存储器单元中，编程脉冲使存储单元中存储的物理量的电平在编程状态之间转变，使得给定的转换仅由单个编程脉冲引起。