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1.发明申请公开(公告)号：US20120210932A1
公开(公告)日：2012-08-23
申请号：US13032866
申请日：2011-02-23
申请人： BAHMAN HEKMATSHOAR-TABARI , Ali Khakifirooz , Alexander Reznicek , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
发明人： BAHMAN HEKMATSHOAR-TABARI , Ali Khakifirooz , Alexander Reznicek , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
CPC分类号： C30B25/04 , C30B25/105 , C30B25/14 , C30B25/183 , C30B25/186 , C30B29/06 , C30B33/12 , H01L21/02381 , H01L21/02395 , H01L21/02532 , H01L21/02576 , H01L21/02584 , H01L21/0262 , H01L21/02639 , H01L21/3065
摘要： An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.
摘要翻译： 外延生长方法包括提供衬底材料的暴露的结晶区域。 硅在低温工艺中外延沉积在衬底材料上，其中沉积温度低于500摄氏度。 源气体用稀释气体稀释，稀释气体与原料气体的气体比小于1000。
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公开(公告)号：US20120318336A1
公开(公告)日：2012-12-20
申请号：US13163137
申请日：2011-06-17
CPC分类号： H01L31/0747 , B82Y20/00 , H01L31/022441 , H01L31/035236 , H01L31/035254 , H01L31/0516 , Y02E10/50
摘要： A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.
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