Abstract:
Polymers comprising at least one unit of formula (1) wherein n is 0 or 1, m and p are independently from each other 0, 1, 2, 3, 4, 5 or 6, provided that the sum of n, m and p is at least 2, and n and p are not 0 at the same time, Ar1 and Ar2 are independently from each other C6-14-arylene or C6-14-aryl, which may be substituted with 1 to 4 substituents independently selected from the group consisting of C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, C5-8-cycloalkyl, C6-14-aryl and 5 to 14 membered heteroaryl, and X1, X2 and X3 are independently from each other and at each occurrence O or S, compositions comprising these polymers, and electronic devices comprising a layer formed from the compositions. Preferably, the electronic device is an organic field effect transistor and the layer is the dielectric layer.
Abstract:
The present invention provides a polymer comprising a unit of formula, wherein R1 and R2 are independently from each other C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, phenyl or a 5 to 8 membered heterocyclic ring system, wherein each of the C1-30-alkyl, C2-30-alkenyl or C2-30-alkynyl group may be substituted with 1 to 10 substituents independently selected from the group consisting of halogen, —CN, —NO2, —OH, —NH2, —NH(C1-20-alkyl), —N(C1-20-alkyl)2, —NH—C(O)—(C1-20-alkyl), —S(O)2OH, —CHO, —C(O)—C1-20-alkyl, —C(O)OH, —C(O)—OC1-20-alkyl, —C(O)NH2, —CO(O)NH—C1-20-alkyl, —C(O)N(C1-20-alkyl)2, —O—C1-20-alkyl, —O—C(O)—C1-20-alkyl, —SiH3, SiH2(C1-20-alkyl), SiH(C1-20-alkyl)2, Si(C1-20-alkyl)3, C4-8-cycloalkyl, phenyl and a 5 to 8 membered heterocyclic ring system, and phenyl and the 5 to 8 membered heterocyclic ring system may be substituted with 1 to 5 C1-16-alkyl groups, is 1, 2 or 3 and n is an integer from 2 to 10'000, a process for the preparation of the polymer and an electronic device comprising the polymer.
Abstract:
The present invention provides compounds of formula (1) wherein o is 1, 2 or 3, p is 0, 1 or 2, n is 0, 1 or 2, m is 0, 1 or 2, and A is a mono- or polycyclic ring system, which may contain at least one heteroatom, and an electronic device comprising the compounds as semiconducting material.
Abstract:
This invention provides a transistor device structure that in-corporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.
Abstract:
The present invention relates to a process for preparing a thin film on a substrate in which a first precursor composition (FPC) and a second precursor composition (SPC) are combined, a thin layer of the combined first precursor composition (FPC) and second precursor composition (SPC) is formed on a substrate and the thin layer is cured, an article comprising said thin layer, a composition comprising said first precursor composition (FPC) and said second precursor composition (SPC), a kit-of-parts comprising said first precursor composition (FPC) and said second precursor composition (SPC) in two vessels and the use of said composition or kit-of-parts for preparing a thin film on a substrate and for preparing an optical or electrical coating.