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1.PHOTOCURABLE POLYMERIC DIELECTRICS AND METHODS OF PREPARATION AND USE THEREOF 有权
Title translation: 可光聚合电介质及其制备和使用方法公开(公告)号:US20140363690A1
公开(公告)日:2014-12-11
申请号:US14467839
申请日:2014-08-25
Applicant: BASF SE , POLYERA CORPORATION
Inventor: Jordan QUINN , He Yan , Yan Zheng , Christopher Newman , Silke Annika Koehler , Antonio Facchetti , Thomas Breiner
IPC: H01B3/44 , C08F118/12 , B05D3/06 , C08F216/10
CPC classification number: H01L51/052 , B05D3/06 , C08F12/22 , C08F12/24 , C08F112/14 , C08F118/12 , C08F212/14 , C08F216/10 , C08G61/02 , C09D125/18 , H01B3/442 , H01B3/447 , H01L51/004 , H01L51/0043 , H01L51/0073 , Y10T428/31938 , C08F220/14 , C08F212/32
Abstract: Disclosed are polymer-based dielectric compositions (e.g., formulations) and materials (e.g. films) and associated devices. The polymers generally include photocrosslinkable pendant groups; for example, the polymers can include one or more coumarin-containing pendant groups.
Abstract translation: 公开了基于聚合物的电介质组合物(例如制剂)和材料(例如膜)和相关装置。 聚合物通常包括可光致交联的侧基; 例如,聚合物可以包括一种或多种含香豆素的侧基。
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公开(公告)号:US20130217180A1
公开(公告)日:2013-08-22
申请号:US13844771
申请日:2013-03-15
Applicant: NORTHWESTERN UNIVERSITY , POLYERA CORPORATION
Inventor: Antonio Facchetti , Tobin J. Marks , Mercouri G. Kanatzidis , Myung-Gil Kim , William Christopher Sheets , He Yan , Yu Xia
IPC: H01L21/02 , H01L29/66 , H01L21/285
CPC classification number: H01L29/66969 , C23C18/1216 , C23C18/1225 , C23C18/1237 , C23C18/125 , C23C18/127 , H01L21/02172 , H01L21/02178 , H01L21/02192 , H01L21/02205 , H01L21/02244 , H01L21/02565 , H01L21/02614 , H01L21/28506 , H01L21/441 , H01L21/443 , H01L21/477 , H01L29/45 , H01L29/517 , H01L29/66742 , H01L29/7869 , H01L29/78693
Abstract: Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (
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3.Low-temperature fabrication of nanomaterial-derived metal composite thin films 有权
Title translation: 纳米材料衍生金属复合薄膜的低温制造公开(公告)号:US09412852B2
公开(公告)日:2016-08-09
申请号:US14606014
申请日:2015-01-26
Applicant: Northwestern University , Polyera Corporation
Inventor: Antonio Facchetti , Tobin J. Marks , Mercouri G. Kanatzidis , Myung-Gil Kim , William Christopher Sheets , He Yan , Yu Xia
IPC: H01L21/441 , H01L21/02 , H01L29/66 , C23C18/12 , H01L21/285 , H01L29/786 , H01L21/443 , H01L21/477 , H01L29/45 , H01L29/51
CPC classification number: H01L29/66969 , C23C18/1216 , C23C18/1225 , C23C18/1237 , C23C18/125 , C23C18/127 , H01L21/02172 , H01L21/02178 , H01L21/02192 , H01L21/02205 , H01L21/02244 , H01L21/02565 , H01L21/02614 , H01L21/28506 , H01L21/441 , H01L21/443 , H01L21/477 , H01L29/45 , H01L29/517 , H01L29/66742 , H01L29/7869 , H01L29/78693
Abstract: Disclosed are new methods of fabricating nanomaterial-derived metal composite thin films via solution processes at low temperatures (
Abstract translation: 公开了在低温(<400℃)下通过溶液工艺制造纳米材料衍生的金属复合薄膜的新方法。 本薄膜可用作薄膜半导体,薄膜电介质或薄膜导体,并且可以实现为诸如薄膜晶体管和薄膜光伏器件的半导体器件。
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4.
公开(公告)号:US08598575B2
公开(公告)日:2013-12-03
申请号:US13775211
申请日:2013-02-24
Applicant: Polyera Corporation
Inventor: Antonio Facchetti , Zhihua Chen , Hakan Usta , Christopher Newman , He Yan
IPC: H01L51/00
CPC classification number: H01L51/0036 , C07D487/04 , C07D493/04 , C07D495/04 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0545
Abstract: Disclosed are new semiconductor materials prepared from thienocoronene-based compounds and related heteroaromatic analogs. Such compounds can exhibit high carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
Abstract translation: 公开了由基于噻吩并苯的化合物和相关的杂芳族类似物制备的新的半导体材料。 这样的化合物可表现出高载流子迁移率和/或良好的电流调制特性。 此外,本教导的化合物可以具有某些加工优点,例如在环境条件下的溶液加工性和/或良好的稳定性。
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公开(公告)号:US08940579B2
公开(公告)日:2015-01-27
申请号:US13844771
申请日:2013-03-15
Applicant: Northwestern University , Polyera Corporation
Inventor: Antonio Facchetti , Tobin J. Marks , Mercouri G. Kanatzidis , Myung-Gil Kim , William Christopher Sheets , He Yan , Yu Xia
IPC: H01L21/441 , H01L21/02 , C23C18/12 , H01L29/66 , H01L21/285 , H01L29/786
CPC classification number: H01L29/66969 , C23C18/1216 , C23C18/1225 , C23C18/1237 , C23C18/125 , C23C18/127 , H01L21/02172 , H01L21/02178 , H01L21/02192 , H01L21/02205 , H01L21/02244 , H01L21/02565 , H01L21/02614 , H01L21/28506 , H01L21/441 , H01L21/443 , H01L21/477 , H01L29/45 , H01L29/517 , H01L29/66742 , H01L29/7869 , H01L29/78693
Abstract: Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (
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6.Low-Temperature Fabrication of Nanomaterial-Derived Metal Composite Thin Films 有权
Title translation: 纳米材料衍生金属复合薄膜的低温制备公开(公告)号:US20150206957A1
公开(公告)日:2015-07-23
申请号:US14606014
申请日:2015-01-26
Applicant: Northwestern University , Polyera Corporation
Inventor: Antonio Facchetti , Tobin J. Marks , Mercouri G. Kanatzidis , Myung-Gil Kim , William Christopher Sheets , He Yan , Yu Xia
IPC: H01L29/66 , H01L29/45 , H01L21/477 , H01L21/02 , H01L21/443 , H01L29/786 , H01L29/51
CPC classification number: H01L29/66969 , C23C18/1216 , C23C18/1225 , C23C18/1237 , C23C18/125 , C23C18/127 , H01L21/02172 , H01L21/02178 , H01L21/02192 , H01L21/02205 , H01L21/02244 , H01L21/02565 , H01L21/02614 , H01L21/28506 , H01L21/441 , H01L21/443 , H01L21/477 , H01L29/45 , H01L29/517 , H01L29/66742 , H01L29/7869 , H01L29/78693
Abstract: Disclosed are new methods of fabricating nanomaterial-derived metal composite thin films via solution processes at low temperatures (
Abstract translation: 公开了在低温(<400℃)下通过溶液工艺制造纳米材料衍生的金属复合薄膜的新方法。 本薄膜可用作薄膜半导体,薄膜电介质或薄膜导体,并且可以实现为诸如薄膜晶体管和薄膜光伏器件的半导体器件。
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7.Low-temperature fabrication of metal oxide thin films and nanomaterial-derived metal composite thin films 有权
Title translation: 金属氧化物薄膜和纳米材料衍生金属复合薄膜的低温制造公开(公告)号:US08940578B2
公开(公告)日:2015-01-27
申请号:US13804037
申请日:2013-03-14
Applicant: Northwestern University , Polyera Corporation
Inventor: Antonio Facchetti , Tobin J. Marks , Mercouri G. Kanatzidis , Myung-Gil Kim , William Christopher Sheets , He Yan , Yu Xia
IPC: H01L21/441 , H01L21/02 , C23C18/12 , H01L29/66 , H01L21/285 , H01L29/786
CPC classification number: H01L29/66969 , C23C18/1216 , C23C18/1225 , C23C18/1237 , C23C18/125 , C23C18/127 , H01L21/02172 , H01L21/02178 , H01L21/02192 , H01L21/02205 , H01L21/02244 , H01L21/02565 , H01L21/02614 , H01L21/28506 , H01L21/441 , H01L21/443 , H01L21/477 , H01L29/45 , H01L29/517 , H01L29/66742 , H01L29/7869 , H01L29/78693
Abstract: Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (
Abstract translation: 公开了通过低温(<400℃)的溶液工艺制造金属氧化物薄膜和纳米材料衍生的金属复合薄膜的新方法。 本薄膜可用作薄膜半导体,薄膜电介质或薄膜导体,并且可以实现为诸如薄膜晶体管和薄膜光伏器件的半导体器件。
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8.Low-Temperature Fabrication of Metal Oxide Thin Films and Nanomaterial-Derived Metal Composite Thin Films 有权
Title translation: 金属氧化物薄膜和纳米材料衍生金属复合薄膜的低温制备公开(公告)号:US20130196469A1
公开(公告)日:2013-08-01
申请号:US13804037
申请日:2013-03-14
Applicant: Northwestern University , Polyera Corporation
Inventor: Antonio Facchetti , Tobin J. Marks , Mercouri G. Kanatzidis , Myung-Gil Kim , William Christopher Sheets , He Yan , Yu Xia
IPC: H01L29/66 , H01L21/02 , H01L21/441
CPC classification number: H01L29/66969 , C23C18/1216 , C23C18/1225 , C23C18/1237 , C23C18/125 , C23C18/127 , H01L21/02172 , H01L21/02178 , H01L21/02192 , H01L21/02205 , H01L21/02244 , H01L21/02565 , H01L21/02614 , H01L21/28506 , H01L21/441 , H01L21/443 , H01L21/477 , H01L29/45 , H01L29/517 , H01L29/66742 , H01L29/7869 , H01L29/78693
Abstract: Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (
Abstract translation: 公开了通过低温(<400℃)的溶液工艺制造金属氧化物薄膜和纳米材料衍生的金属复合薄膜的新方法。 本薄膜可用作薄膜半导体,薄膜电介质或薄膜导体,并且可以实现为诸如薄膜晶体管和薄膜光伏器件的半导体器件。
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9.
公开(公告)号:US20130168659A1
公开(公告)日:2013-07-04
申请号:US13775211
申请日:2013-02-24
Applicant: Polyera Corporation
Inventor: Antonio Facchetti , Zhihua Chen , Hakan Usta , Christopher Newman , He Yan
IPC: H01L51/00 , C07D493/04 , C07D487/04 , C07D495/04
CPC classification number: H01L51/0036 , C07D487/04 , C07D493/04 , C07D495/04 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0545
Abstract: Disclosed are new semiconductor materials prepared from thienocoronene-based compounds and related heteroaromatic analogs. Such compounds can exhibit high carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
Abstract translation: 公开了由基于噻吩并苯的化合物和相关的杂芳族类似物制备的新的半导体材料。 这样的化合物可表现出高载流子迁移率和/或良好的电流调制特性。 此外,本教导的化合物可以具有某些加工优点,例如在环境条件下的溶液加工性和/或良好的稳定性。
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公开(公告)号:US09923158B2
公开(公告)日:2018-03-20
申请号:US14467839
申请日:2014-08-25
Applicant: BASF SE , FLEXTERRA, INC.
Inventor: Jordan Quinn , He Yan , Yan Zheng , Christopher Newman , Silke Annika Koehler , Antonio Facchetti , Thomas Breiner
IPC: C08F12/22 , H01L51/05 , H01L51/00 , C08G61/02 , B05D3/06 , C08F118/12 , C08F216/10 , H01B3/44 , C09D125/18 , C08F112/14 , C08F12/24 , C08F212/14
CPC classification number: H01L51/052 , B05D3/06 , C08F12/22 , C08F12/24 , C08F112/14 , C08F118/12 , C08F212/14 , C08F216/10 , C08G61/02 , C09D125/18 , H01B3/442 , H01B3/447 , H01L51/004 , H01L51/0043 , H01L51/0073 , Y10T428/31938 , C08F220/14 , C08F212/32
Abstract: Disclosed are polymer-based dielectric compositions (e.g., formulations) and materials (e.g. films) and associated devices. The polymers generally include photocrosslinkable pendant groups; for example, the polymers can include one or more coumarin-containing pendant groups.
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