公开(公告)号：US20210151605A1

公开(公告)日：2021-05-20

申请号：US16642638

申请日：2019-03-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhi WANG ,  Guangcai YUAN ,  Feng GUAN ,  Chen XU ,  Xueyong WANG ,  Jianhua DU ,  Chao LI ,  Lei CHEN

IPC: H01L29/786 ,  H01L29/66

Abstract: The present disclosure relates to a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a first semiconductor layer, a gate dielectric layer, and a gate electrode sequentially stacked on the substrate, the first semiconductor layer has a first portion located in a channel region of the thin film transistor and a second portion in source/drain regions of the thin film transistor and located on both sides of the first portion, the second portion and first sub-portions of the first portion adjacent to the second portion include an amorphous semiconductor material, a second sub-portion of the first portion between the first sub-portions includes a polycrystalline semiconductor material, and a second semiconductor layer located in the source/drain regions and in contact with the second portion, wherein a conductivity of the second semiconductor layer is higher than a conductivity of the amorphous semiconductor material.

公开(公告)号：US20210111200A1

公开(公告)日：2021-04-15

申请号：US16846888

申请日：2020-04-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yupeng GAO ,  Guangcai YUAN ,  Feng GUAN ,  Zhi WANG ,  Jianhua DU ,  Zhaohui QIANG ,  Chao LI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

Abstract: The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.

公开(公告)号：US20220115413A1

公开(公告)日：2022-04-14

申请号：US17263748

申请日：2020-03-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chao LUO ,  Feng GUAN ,  Zhi WANG ,  Jianhua DU ,  Yang LV ,  Zhaohui QIANG ,  Chao LI

IPC: H01L27/12

Abstract: A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.

公开(公告)号：US20180277344A1

公开(公告)日：2018-09-27

申请号：US15541883

申请日：2017-01-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhongpeng TIAN ,  Xuewei GAO ,  Lei XIAO ,  Jianhua DU

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: A magnetron sputtering device, a magnetron sputtering apparatus, and a magnetron sputtering method are provided. The magnetron sputtering device includes: a target material bearing portion, configured to bear a target material thereon; a magnet bearing section, configured to bear a magnet thereon and to be capable of driving the magnet to perform reciprocating motion along a predetermined path with respect to the target material bearing portion; a limit sensor, configured to determine an end-point position of the predetermined path along which the magnet performs reciprocating motion; the end-point position determined by the limit sensor can be adjusted along the predetermined path during a working procedure of the magnetron sputtering device.

公开(公告)号：US20180252370A1

公开(公告)日：2018-09-06

申请号：US15737532

申请日：2017-05-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xin WANG ,  Jianhua DU

IPC: F21K9/61 ,  F21V8/00 ,  G02B27/30 ,  G02B27/09

CPC classification number: F21K9/61 ,  F21Y2115/10 ,  G02B5/0215 ,  G02B5/201 ,  G02B6/0025 ,  G02B6/0043 ,  G02B6/005 ,  G02B27/0955 ,  G02B27/30 ,  G02F1/1335

Abstract: The present disclosure provides a backlight module, a method for operating the same and a display device including the backlight module. The backlight module comprises a light guide plate, a collimated light source and a shading plate between the light guide plate and the collimated light source. The light guide plate comprises a transparent main body and a plurality of diffusion dots formed on the transparent main body. The shading plate comprises a plurality of shading regions corresponding to the plurality of diffusion dots of the light guide plate. The collimated light source generates collimated light vertically irradiating on the shading plate.

公开(公告)号：US20240373674A1

公开(公告)日：2024-11-07

申请号：US18031651

申请日：2022-06-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei LIU ,  Meng ZHAO ,  Cheng XU ,  Dandan ZHOU ,  Renquan GU ,  Jianhua DU ,  Chaolu WANG

IPC: H10K59/121 ,  H10K59/131

Abstract: Provided are a display substrate and a display device. The display substrate includes a base substrate and pixel units each including a pixel driving circuit at least including a first and a second thin film transistors; a first semiconductor layer, a first conductive layer, a second conductive layer and a second semiconductor layer are sequentially arranged on the base substrate; the first semiconductor layer includes a first active layer, including a first source region, of the first thin film transistor; the first conductive layer includes a first gate of the first thin film transistor; the second conductive layer includes a first transfer electrode electrically connected to the first source region; the second semiconductor layer includes a second active layer, which includes a second source region, of the second thin film transistor; the second source region is electrically connected to the first transfer electrode.

公开(公告)号：US20210005769A1

公开(公告)日：2021-01-07

申请号：US16909526

申请日：2020-06-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chao LI ,  Jianhua DU ,  Feng GUAN ,  Yupeng GAO ,  Zhaohui QIANG ,  Zhi WANG ,  Yang LYU ,  Chao LUO

IPC: H01L31/105 ,  H01L27/12 ,  H01L31/12 ,  H01L31/18

Abstract: The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.

公开(公告)号：US20190049827A1

公开(公告)日：2019-02-14

申请号：US15565793

申请日：2017-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xin WANG ,  Jianhua DU ,  Fan YANG

IPC: G03B21/14 ,  H04N9/31 ,  H04M1/02 ,  H04M1/04

Abstract: A projection device includes a snap-in structure for securing a mobile terminal; a first data interface arranged on the device body and connected to a second data interface of the mobile terminal; and a projection unit secured on the device body and connected to the first data interface.

公开(公告)号：US20180209036A1

公开(公告)日：2018-07-26

申请号：US15501729

申请日：2016-07-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianhua DU ,  Can WANG ,  Xiaolong HE ,  Xuefei SUN

IPC: C23C14/35

CPC classification number: C23C14/35 ,  C23C14/3407 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3488

Abstract: A sputtering apparatus and a target changing device thereof are disclosed. The target changing device includes a stand, a mounting shaft on the stand, a target mounting body sleeved on an outside of the mounting shaft and being ratable around an axis of the mounting shaft, and a first driving mechanism configured to drive the target mounting body to rotate around the axis of the mounting shaft. The target mounting body includes at least two target mounting surfaces configured to mount targets. When the target mounting body rotates around the axis of the mounting shaft, each of the target mounting surfaces may be switched between an operating state orientation and an idle orientation

公开(公告)号：US20240347550A1

公开(公告)日：2024-10-17

申请号：US18755700

申请日：2024-06-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yang LV ,  Feng GUAN ,  Jianhua DU ,  Meng ZHAO ,  Hao WU ,  Chaolu WANG

IPC: H01L27/12

CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/127

Abstract: A method for preparing a driving backplane includes: providing a base substrate, forming a connecting layer on a side of the base substrate; forming an insulating layer group on a side of the connecting layer away from the base substrate, forming a first via hole by patterning the insulating layer group; forming inducing particles on a side of the insulating layer group away from the base substrate; forming a doped amorphous silicon layer on a side of the inducing particles away from the base substrate, forming a first conductor part by the doped amorphous silicon layer formed in the first via hole, forming a raw material part by patterning the doped amorphous silicon layer; and forming a first channel part by causing the inducing particles to induce the raw material part, wherein the first channel part is connected to the first conductor part.