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公开(公告)号：US20210111200A1
公开(公告)日：2021-04-15
申请号：US16846888
申请日：2020-04-13
发明人： Yupeng GAO , Guangcai YUAN , Feng GUAN , Zhi WANG , Jianhua DU , Zhaohui QIANG , Chao LI
IPC分类号： H01L27/12 , H01L29/24 , H01L29/786 , H01L29/66
摘要： The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.
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公开(公告)号：US20230352496A1
公开(公告)日：2023-11-02
申请号：US18208529
申请日：2023-06-12
发明人： Guangcai YUAN , Xue DONG , Feng GUAN , Yupeng GAO
IPC分类号： H01L27/12
CPC分类号： H01L27/127 , H01L27/1233
摘要： Disclosed are an array substrate and a display panel. The array substrate includes: a base substrate; a first thin film transistor on the base substrate; where the first thin film transistor includes: a first gate electrode, a first active layer, a first source electrode, and a first drain electrode; where the first active layer includes: at least one guide structure extending in a first direction; a silicon-based nanowire, disposed on a side of the guide structure facing away from the base substrate; and an extending direction of the silicon-based nanowire is same as an extending direction of the guide structure.
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公开(公告)号：US20230154939A1
公开(公告)日：2023-05-18
申请号：US17047912
申请日：2020-03-25
发明人： Guangcai YUAN , Xue DONG , Feng GUAN , Yupeng GAO
IPC分类号： H01L27/12
CPC分类号： H01L27/127 , H01L27/1233
摘要： This disclosure provides an array substrate, a method for preparing the array substrate, and a display panel. The method includes: forming a first thin film transistor and a second thin film transistor on a base substrate. In the formation of an active layer of the first thin film transistor, by using an eutectic point of the catalyst particle and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon (silicon-based nanowire), and due to absorption of the amorphous silicon by the molten catalyst particle to form a supersaturated silicon eutectoid, the silicon nucleates and grows into a silicon-based nanowire. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide structure under the action of the catalyst particle, thus obtaining a silicon-based nanowire with a high density and high uniformity. In addition, by controlling the size of the catalyst particle and the thickness of the amorphous silicon film, the width of the silicon-based nanowire may also be controlled. In this way, a thin film transistor having a silicon-based nanowire with a uniform and controllable size is prepared.
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公开(公告)号：US20210028315A1
公开(公告)日：2021-01-28
申请号：US16641078
申请日：2019-02-22
发明人： Zhaohui QIANG , Feng GUAN , Zhi WANG , Yupeng GAO , Yang LYU , Chao LI , Jianhua DU , Lei CHEN
IPC分类号： H01L29/786 , H01L29/66 , H01L29/45 , H01L29/417
摘要： The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.
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5.发明申请公开(公告)号：US20210225286A1
公开(公告)日：2021-07-22
申请号：US16633377
申请日：2019-01-29
发明人： Lizhong WANG , Rui HUANG , Yupeng GAO , Jiangnan LU , Shuilang DONG
IPC分类号： G09G3/3258 , G09G3/3291
摘要： A display substrate, a display panel, and a manufacturing method and a driving method of a display substrate are provided. The display substrate includes a base substrate, a pixel circuit, and a photosensitive unit. The pixel circuit and the photosensitive unit are on the base substrate, the pixel circuit includes a first transistor, and an orthographic projection of the photosensitive unit on the base substrate at least partially overlaps with an orthographic projection of the first transistor on the base substrate.
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公开(公告)号：US20210217909A1
公开(公告)日：2021-07-15
申请号：US16958120
申请日：2020-01-17
发明人： Jianhua DU , Chao LI , Zhaohui QIANG , Yupeng GAO , Feng GUAN , Rui HUANG , Zhi WANG , Yang LV , Chao LUO
IPC分类号： H01L31/0224 , H01L31/20 , H01L31/18 , H01L31/0376
摘要： The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.
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公开(公告)号：US20210158007A1
公开(公告)日：2021-05-27
申请号：US17041516
申请日：2020-04-08
发明人： Shipei LI , Ying ZHAO , Renquan GU , Wei HE , Huili WU , Dongsheng YIN , Sheng XU , Lizhen ZHANG , Xuefei ZHAO , Fang HE , Yupeng GAO
IPC分类号： G06K9/00 , H01L27/146
摘要： Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.
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公开(公告)号：US20220320449A1
公开(公告)日：2022-10-06
申请号：US17427556
申请日：2020-12-29
发明人： Lizhong WANG , Tianmin ZHOU , Yupeng GAO , Ning DANG
IPC分类号： H01L51/05
摘要： A thin film transistor, a method for manufacturing the same and a display device are disclosed, the thin film transistor includes: a first electrode, a second electrode, an active layer and a flexible conductive layer located on a substrate, one of the first electrode and the second electrode is a source, and the other thereof is a drain; the active layer is electrically coupled with the first electrode, and an orthographic projection of the active layer on the substrate is within an orthographic projection of the first electrode on the substrate; the flexible conductive layer is located on a side of the active layer away from the first electrode, and electrically couples the active layer with the second electrode.
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公开(公告)号：US20210005769A1
公开(公告)日：2021-01-07
申请号：US16909526
申请日：2020-06-23
发明人： Chao LI , Jianhua DU , Feng GUAN , Yupeng GAO , Zhaohui QIANG , Zhi WANG , Yang LYU , Chao LUO
IPC分类号： H01L31/105 , H01L27/12 , H01L31/12 , H01L31/18
摘要： The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.
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