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公开(公告)号:US20200313037A1
公开(公告)日:2020-10-01
申请号:US16601472
申请日:2019-10-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Wei HE , Xiang LI , Huili WU , Shipei LI , Fang HE , Renquan GU , Sheng XU , Dongsheng YIN , Xuefei ZHAO , Lizhen ZHANG , Wusheng LI , Qi YAO
Abstract: A patterning method of a quantum dot layer, a quantum dot layer pattern, a quantum dot device, a manufacturing method of the quantum dot device, and a display apparatus are provided, The patterning method of the quantum dot layer includes: forming a quantum dot layer, in which the quantum dot layer includes quantum dots and a photoinitiator; irradiating a preset portion of the quantum dot layer by light having a preset wavelength to quench the quantum dots in the preset portion and form a patterned quantum dot layer.
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公开(公告)号:US20200235321A1
公开(公告)日:2020-07-23
申请号:US16597905
申请日:2019-10-10
Applicant: BOE Technology Group Co., Ltd.
Inventor: Shipei LI , Qi YAO , Wusheng LI , Jiangnan LU , Huili WU , Fang HE , Renquan GU , Dongsheng YIN , Sheng XU , Wei HE
Abstract: A display panel is provided, including a substrate on a base, a transistor stack on the substrate, and a fluorescent layer between the base and the transistor stack. The fluorescent layer is configured to prevent light from damaging an active layer in the transistor stack in a laser lift-off process, and an orthographic projection of the fluorescent layer on the base overlaps an orthographic projection of the active layer on the base. A display device comprising the display panel, and a manufacturing method of the display panel are further provided.
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公开(公告)号:US20210234137A1
公开(公告)日:2021-07-29
申请号:US16769374
申请日:2019-10-08
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Wei HE , Huili WU , Shipei LI , Dongsheng LI , Fang HE , Renquan GU , Sheng XU , Dongsheng YIN , Wusheng LI , Qi YAO
Abstract: The present disclosure relates to a method of fabricating a flexible display panel. The method of fabricating the flexible display panel may include forming a photosensitive layer comprising at least one azo group on a carrier substrate; forming a flexible substrate on the photosensitive layer; irradiating the photosensitive layer with ultraviolet light; and peeling off the flexible substrate from the carrier substrate.
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公开(公告)号:US20210159363A1
公开(公告)日:2021-05-27
申请号:US16824062
申请日:2020-03-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Sheng XU , Huili WU , Lizhen ZHANG , Wei HE , Xuefei ZHAO , Shipei LI , Fang HE , Dongsheng YIN , Renquan GU , Wusheng LI , Qi YAO
IPC: H01L33/38 , H01L33/24 , H01L25/075
Abstract: A drive backboard, a manufacturing method thereof, a display panel and a display device are provided. The drive backboard includes a plurality of pixel units and a plurality of spare electrode groups. Each pixel unit includes m subpixel units, and m is a positive integer greater than or equal to 2. Each spare electrode group includes two first spare electrodes and one second spare electrode; two adjacent ith subpixel units respectively use one first spare electrode in each spare electrode group and share one second spare electrode in each spare electrode group, where i is a positive integer from 1 to m.
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公开(公告)号:US20210158007A1
公开(公告)日:2021-05-27
申请号:US17041516
申请日:2020-04-08
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Shipei LI , Ying ZHAO , Renquan GU , Wei HE , Huili WU , Dongsheng YIN , Sheng XU , Lizhen ZHANG , Xuefei ZHAO , Fang HE , Yupeng GAO
IPC: G06K9/00 , H01L27/146
Abstract: Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.
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公开(公告)号:US20210020613A1
公开(公告)日:2021-01-21
申请号:US16904584
申请日:2020-06-18
Applicant: BOE Technology Group Co., Ltd.
Inventor: Li QIANG , Zhaohui QIANG , Tao YANG , Dongsheng YIN
IPC: H01L25/075 , H01L25/16
Abstract: A light emitting diode, a display substrate and a transfer method are disclosed. The transfer method includes: disposing a display substrate on an adsorption carrier plate, and absorbing, by a transport head, multiple light emitting diodes from a donor substrate; dropping, by the transport head, the multiple light emitting diodes onto the display substrate, the light emitting diodes falling into positioning holes on the display substrate; and absorbing and removing, by the transport head, a light emitting diode on the display substrate which does not fall into a positioning hole.
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