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公开(公告)号：US20210234137A1
公开(公告)日：2021-07-29
申请号：US16769374
申请日：2019-10-08
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wei HE , Huili WU , Shipei LI , Dongsheng LI , Fang HE , Renquan GU , Sheng XU , Dongsheng YIN , Wusheng LI , Qi YAO
Abstract: The present disclosure relates to a method of fabricating a flexible display panel. The method of fabricating the flexible display panel may include forming a photosensitive layer comprising at least one azo group on a carrier substrate; forming a flexible substrate on the photosensitive layer; irradiating the photosensitive layer with ultraviolet light; and peeling off the flexible substrate from the carrier substrate.
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公开(公告)号：US20210159363A1
公开(公告)日：2021-05-27
申请号：US16824062
申请日：2020-03-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Sheng XU , Huili WU , Lizhen ZHANG , Wei HE , Xuefei ZHAO , Shipei LI , Fang HE , Dongsheng YIN , Renquan GU , Wusheng LI , Qi YAO
IPC: H01L33/38 , H01L33/24 , H01L25/075
Abstract: A drive backboard, a manufacturing method thereof, a display panel and a display device are provided. The drive backboard includes a plurality of pixel units and a plurality of spare electrode groups. Each pixel unit includes m subpixel units, and m is a positive integer greater than or equal to 2. Each spare electrode group includes two first spare electrodes and one second spare electrode; two adjacent ith subpixel units respectively use one first spare electrode in each spare electrode group and share one second spare electrode in each spare electrode group, where i is a positive integer from 1 to m.
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公开(公告)号：US20210158007A1
公开(公告)日：2021-05-27
申请号：US17041516
申请日：2020-04-08
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Shipei LI , Ying ZHAO , Renquan GU , Wei HE , Huili WU , Dongsheng YIN , Sheng XU , Lizhen ZHANG , Xuefei ZHAO , Fang HE , Yupeng GAO
IPC: G06K9/00 , H01L27/146
Abstract: Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.
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4.发明申请公开(公告)号：US20190288231A1
公开(公告)日：2019-09-19
申请号：US16218910
申请日：2018-12-13
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Fang HE , Shi SHU , Chuanxiang XU
Abstract: The present application provides display mother-substrate, method of manufacturing display mother-substrate, display substrate and display apparatus. The display mother-substrate is configured to be cut along cutting line to obtain display substrate, has display area and non-display area, and includes: a base substrate; a plurality of light emitting elements on the base substrate and in the display area; an encapsulation layer for encapsulating the plurality of the light emitting elements on a side of the plurality of light emitting elements away from the base substrate and in both of the display area and the non-display area; a spacer component in the non-display area and on a side of the encapsulation layer close to the base substrate. At least a part of the spacer component is between the cutting line and the display area. The encapsulation layer is discontinuous at a position between the cutting line and the display area.
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公开(公告)号：US20190219849A1
公开(公告)日：2019-07-18
申请号：US16321953
申请日：2018-05-11
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Fang HE
IPC: G02F1/1333 , G02F1/1339 , G02F1/1335 , H01L41/04 , H01L41/113
Abstract: Disclosed are a curved display device and a manufacturing method therefor. The curved display device includes: an array substrate and an opposite substrate arranged opposite to each other, and a liquid crystal layer located between the array substrate and the opposite substrate, wherein on a side, away from the liquid crystal layer, of the array substrate and/or the opposite substrate, a plurality of piezoelectric sensors parallel to each other and a piezoelectric control chip in electrical signal connection with the piezoelectric sensors are respectively provided.
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Patent Agency Ranking
公开(公告)号：US20200235321A1
公开(公告)日：2020-07-23
申请号：US16597905
申请日：2019-10-10
Applicant: BOE Technology Group Co., Ltd.
Inventor： Shipei LI , Qi YAO , Wusheng LI , Jiangnan LU , Huili WU , Fang HE , Renquan GU , Dongsheng YIN , Sheng XU , Wei HE
Abstract: A display panel is provided, including a substrate on a base, a transistor stack on the substrate, and a fluorescent layer between the base and the transistor stack. The fluorescent layer is configured to prevent light from damaging an active layer in the transistor stack in a laser lift-off process, and an orthographic projection of the fluorescent layer on the base overlaps an orthographic projection of the active layer on the base. A display device comprising the display panel, and a manufacturing method of the display panel are further provided.
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公开(公告)号：US20160351588A1
公开(公告)日：2016-12-01
申请号：US15233255
申请日：2016-08-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Shi SHU , Feng ZHANG , Yaohui GU , Fang HE , Feng GU
IPC: H01L27/12 , H01L29/45 , G02F1/1368 , G02F1/1343 , G02F1/1362 , G02F1/1335 , G02F1/1339 , H01L21/768 , G02F1/1333
CPC classification number: H01L27/124 , G02F1/133345 , G02F1/133516 , G02F1/13394 , G02F1/134363 , G02F1/13439 , G02F1/136209 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/136222 , G02F2001/136295 , G02F2201/121 , G02F2201/123 , H01L21/76802 , H01L21/76877 , H01L27/1288 , H01L29/458
Abstract: Embodiments of the disclosure disclose an array substrate and a fabrication method thereof, and a display device. The fabrication method of the array substrate comprises: forming a thin film transistor; forming a passivation layer covering the thin film transistor, the passivation layer having a via hole and the via hole exposing at least a portion of a drain electrode of the thin film transistor; forming a via-hole conductive layer, the via-hole conductive layer covering the portion of the drain electrode exposed at the via hole and connected to the drain electrode; treating the via-hole conductive layer, so that a reflectivity of the via-hole conductive layer is lower than a reflectivity of the drain electrode; and forming a pixel electrode, the pixel electrode being connected with the drain electrode through the via-hole conductive layer.
Abstract translation: 本发明的实施例公开了阵列基板及其制造方法以及显示装置。 阵列基板的制造方法包括：形成薄膜晶体管; 形成覆盖所述薄膜晶体管的钝化层，所述钝化层具有通孔，所述通孔暴露所述薄膜晶体管的漏电极的至少一部分; 形成通孔导电层，所述通孔导电层覆盖在所述通孔露出并与所述漏电极连接的所述漏电极的所述部分; 处理通孔导电层，使得通孔导电层的反射率低于漏电极的反射率; 并且形成像素电极，所述像素电极通过所述通孔导电层与所述漏电极连接。
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公开(公告)号：US20160148838A1
公开(公告)日：2016-05-26
申请号：US14574721
申请日：2014-12-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Shi SHU , Feng ZHANG , Yaohui GU , Fang HE , Feng GU
IPC: H01L21/768 , G02F1/1362 , G02F1/1368 , H01L27/12
CPC classification number: H01L27/124 , G02F1/133345 , G02F1/133516 , G02F1/13394 , G02F1/134363 , G02F1/13439 , G02F1/136209 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/136222 , G02F2001/136295 , G02F2201/121 , G02F2201/123 , H01L21/76802 , H01L21/76877 , H01L27/1288 , H01L29/458
Abstract: Embodiments of the disclosure disclose an array substrate and a fabrication method thereof, and a display device. The fabrication method of the array substrate comprises: forming a thin film transistor; forming a passivation layer covering the thin film transistor, the passivation layer having a via hole and the via hole exposing at least a portion of a drain electrode of the thin film transistor; forming a via-hole conductive layer, the via-hole conductive layer covering the portion of the drain electrode exposed at the via hole and connected to the drain electrode; treating the via-hole conductive layer, so that a reflectivity of the via-hole conductive layer is lower than a reflectivity of the drain electrode; and forming a pixel electrode, the pixel electrode being connected with the drain electrode through the via-hole conductive layer.
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公开(公告)号：US20210366966A1
公开(公告)日：2021-11-25
申请号：US17200930
申请日：2021-03-15
Applicant: BOE Technology Group Co., Ltd.
Inventor： Shipei LI , Lizhen ZHANG , Sheng XU , Wei HE , Huili WU , Xuefei ZHAO , Fang HE , Yi ZHOU , Ying ZHAO , Wusheng LI , Qi YAO
IPC: H01L27/146
Abstract: A photosensitive sensor, a preparation method thereof, and an electronic device, wherein the photosensitive sensor includes a substrate, the substrate having a sensing area, a plurality of regularly arranged sensing units being provided in the sensing area, a shielding layer being provided on a side of the sensing units away from the substrate, the shielding layer covering the sensing area, a material of the shielding layer being a transparent conductive material, and the shielding layer being connected with a constant voltage signal terminal.
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10.发明申请公开(公告)号：US20200313037A1
公开(公告)日：2020-10-01
申请号：US16601472
申请日：2019-10-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wei HE , Xiang LI , Huili WU , Shipei LI , Fang HE , Renquan GU , Sheng XU , Dongsheng YIN , Xuefei ZHAO , Lizhen ZHANG , Wusheng LI , Qi YAO
Abstract: A patterning method of a quantum dot layer, a quantum dot layer pattern, a quantum dot device, a manufacturing method of the quantum dot device, and a display apparatus are provided, The patterning method of the quantum dot layer includes: forming a quantum dot layer, in which the quantum dot layer includes quantum dots and a photoinitiator; irradiating a preset portion of the quantum dot layer by light having a preset wavelength to quench the quantum dots in the preset portion and form a patterned quantum dot layer.
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