ANTENNA AND DISPLAY APPARATUS
    2.
    发明公开

    公开(公告)号:US20240186703A1

    公开(公告)日:2024-06-06

    申请号:US17760258

    申请日:2021-11-17

    发明人: Yali Wang Feng Qu

    IPC分类号: H01Q9/04 H01Q1/22

    CPC分类号: H01Q9/0428 H01Q1/22

    摘要: An antenna is provided. The antenna includes a ground plate, and a slot extending through the ground plate; a first dielectric layer on the ground plate and the slot; a microstrip feed line and a first radiating patch on a side of the first dielectric layer away from the ground plate, the first radiating patch being coupled to the microstrip feed line and configured to receive a signal from the microstrip feed line; a second dielectric layer on a side of the ground plate and the slot away from the first dielectric layer, the first radiating patch, and the microstrip feed line; and a second radiating patch on a side of the second dielectric layer away from the ground plate, the second radiating patch being configured to receive a signal by aperture coupling through the slot.

    Radio frequency duplexer circuit and radio frequency substrate

    公开(公告)号:US11722115B2

    公开(公告)日:2023-08-08

    申请号:US17514895

    申请日:2021-10-29

    发明人: Xiyuan Wang Feng Qu

    IPC分类号: H03H7/46 H03H7/01

    摘要: The present disclosure provides a radio frequency duplexer circuit and a radio frequency substrate. The radio frequency duplexer circuit includes a first terminal, a second terminal, a third terminal, a low-pass filter, and a high-pass filter. The low-pass filter includes N first filter sub-circuits coupled in series and a first tuning sub-circuit. Among the N first filter sub-circuits coupled in series, a first end of a 1st first filter sub-circuit is coupled to the first terminal, and a second end of a Nth first filter sub-circuit is coupled to the second terminal. The high-pass filter includes M second filter sub-circuits coupled in series and a second tuning sub-circuit. Among the M second filter sub-circuits coupled in series, a first end of a 1st second filter sub-circuit is coupled to the first terminal, and a second end of a Mth second filter sub-circuit is coupled to the third terminal.

    Semiconductor Substrate Manufacturing Method and Semiconductor Substrate

    公开(公告)号:US20230006070A1

    公开(公告)日:2023-01-05

    申请号:US17782035

    申请日:2021-05-27

    摘要: A semiconductor substrate manufacturing method and a semiconductor substrate. The manufacturing method includes: forming a first semiconductor layer on the base substrate at a first temperature with a first oxide semiconductor material; forming the second semiconductor layer directly on the first semiconductor layer with a second oxide semiconductor material; and performing a patterning process such that the first semiconductor layer and the second semiconductor layer are respectively patterned into a seed layer and a first channel layer. Both the first oxide semiconductor material and the second oxide semiconductor material are capable of forming crystalline phases at a second temperature, the second temperature is less than or equal to 40° C., and the first temperature is greater than or equal to 100° C.