Initial Signal Generator, Display Panel and Display Method Thereof, and Display Apparatus

    公开(公告)号:US20250131880A1

    公开(公告)日:2025-04-24

    申请号:US18689080

    申请日:2022-08-31

    Abstract: A display panel and a display method thereof, and a display apparatus are provided. The display panel includes multiple pixel units arranged in an array, a pixel unit including multiple sub-pixels, a sub-pixel including a pixel drive circuit and a light emitting element connected with the pixel drive circuit, the display panel further including an initial signal generator, the display panel including a low frequency driving mode and a normal driving mode, the low frequency driving mode including a refresh frame stage for writing data to the pixel unit and a hold frame stage for holding the data written to the pixel unit, the initial signal generator being configured to acquire a current display brightness value band and a pattern to be displayed in the low frequency driving mode; quantize the pattern to be displayed to get an average picture level; determine a corresponding anode reset voltage according to the current display brightness value band and the average picture level. and in the hold frame stage, output the corresponding anode reset voltage to the pixel drive circuit to reset an anode of the light emitting element.

    POLY-SILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
    3.
    发明申请
    POLY-SILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE 审中-公开
    聚硅薄膜晶体管及其制造方法,阵列基板及其制造方法及显示装置

    公开(公告)号:US20160254368A1

    公开(公告)日:2016-09-01

    申请号:US14433701

    申请日:2014-08-21

    Abstract: A poly-silicon thin film transistor and its manufacturing method, an array substrate and its manufacturing method, and a display device are provided. The method for manufacturing a poly-silicon thin film transistor includes forming a poly-silicon layer on a base substrate so that the poly-silicon layer includes a first poly-silicon area, second poly-silicon areas located at the both sides of the first poly-silicon area and third poly-silicon areas located at a side of the second poly-silicon areas away from the first poly-silicon area; forming a barrier layer between a gate electrode and a gate insulation layer by a dry etching method so that the barrier layer corresponds to the first poly-silicon area; and with the barrier layer as a mask doping the second poly-silicon areas to form lightly doped areas. By this method, the lightly doped areas may have the same length, and thus the problem of excessive leakage current is avoided.

    Abstract translation: 提供多晶硅薄膜晶体管及其制造方法,阵列基板及其制造方法以及显示装置。 多晶硅薄膜晶体管的制造方法包括在基底基板上形成多晶硅层,使得多晶硅层包括第一多晶硅区域,位于第一多晶硅层两侧的第二多晶硅区域 位于所述第二多晶硅区域远离所述第一多晶硅区域的一侧的多晶硅区域和第三多晶硅区域; 通过干蚀刻法在栅电极和栅极绝缘层之间形成阻挡层,使得阻挡层对应于第一多晶硅区域; 并且将阻挡层作为掩模掺杂第二多晶硅区域以形成轻掺杂区域。 通过该方法,轻掺杂区域可以具有相同的长度,因此避免了过度泄漏电流的问题。

    ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE
    4.
    发明申请
    ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE 有权
    阵列基板及其制造方法,显示装置

    公开(公告)号:US20160247840A1

    公开(公告)日:2016-08-25

    申请号:US14386209

    申请日:2013-12-03

    Abstract: An array substrate and a display device are presented. The array substrate includes: a base substrate and a plurality of thin film transistor units located on the base substrate, wherein, the thin film transistor unit includes: a first gate electrode located on the base substrate, a gate insulating layer located on the first gate electrode, a drain electrode disposed in the same layer as the first gate electrode, an active layer located on the drain electrode, a source electrode located on the active layer, a first transparent conductive layer is provided between the base substrate and the first gate electrode and the drain electrode that are disposed in the same layer, and the gate insulating layer is also disposed between the first gate electrode plus the first transparent conductive layer beneath it and the drain electrode plus the first transparent conductive layer beneath it.

    Abstract translation: 呈现阵列基板和显示装置。 阵列基板包括:基底基板和位于基底基板上的多个薄膜晶体管单元,其中,薄膜晶体管单元包括:位于基底基板上的第一栅电极,位于第一栅极上的栅极绝缘层 电极,设置在与第一栅电极相同的层中的漏电极,位于漏电极上的有源层,位于有源层上的源电极,第一透明导电层设置在基底基板和第一栅电极之间 和漏电极,并且栅绝缘层也设置在第一栅电极与其下的第一透明导电层之间,漏电极加上其下的第一透明导电层。

    ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, THIN-FILM TRANSISTOR (TFT) AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, THIN-FILM TRANSISTOR (TFT) AND MANUFACTURING METHOD THEREOF 有权
    阵列基板及其制造方法,显示装置,薄膜​​晶体管(TFT)及其制造方法

    公开(公告)号:US20160027807A1

    公开(公告)日:2016-01-28

    申请号:US14420217

    申请日:2014-07-17

    Inventor: Jiaxiang ZHANG

    Abstract: An array substrate and a manufacturing method thereof, a display device, a thin-film transistor (TFT) and a manufacturing method thereof. The array substrate comprises a base substrate and a pixel electrode and a TFT formed on the base substrate. The TFT includes an active layer and a source/drain pattern. The source/drain pattern is connected with the active layer. The pixel electrode is connected with the active layer. The array substrate can improve the aperture ratio of pixels and the chargeability of the TFT.

    Abstract translation: 阵列基板及其制造方法,显示装置,薄膜​​晶体管(TFT)及其制造方法。 阵列基板包括基底基板和形成在基底基板上的像素电极和TFT。 TFT包括有源层和源极/漏极图案。 源极/漏极图案与有源层连接。 像素电极与有源层连接。 阵列基板可以提高像素的开口率和TFT的带电性。

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