公开(公告)号：US20160343780A1

公开(公告)日：2016-11-24

申请号：US14914350

申请日：2015-11-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yidong Guo ,  Chunping Long

IPC: H01L27/32 ,  H01L21/02 ,  H01L31/18 ,  H01L29/786 ,  H01L51/00 ,  H01L31/075 ,  H01L29/66

CPC classification number: H01L27/3227 ,  H01L27/142 ,  H01L27/3244 ,  H01L31/068 ,  H01L31/1804 ,  H01L51/0097 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  Y02E10/547 ,  Y02P70/521

Abstract: An array substrate, a fabrication method thereof, and an organic light-emitting diode display device are provided; the array substrate (10) comprises a base substrate (100), the base substrate (100) including a display region (102) and a peripheral region (101) surrounding the display region (102), the display region (102) including: a plurality of data lines (12) and a plurality of gate lines (11) intersecting with each other, a plurality of pixel regions (21), formed in a matrix and defined by the plurality of data lines (12) and the plurality of gate lines (11) intersecting with each other formed on the base substrate (100), wherein a thin film transistor (32) is formed in each of the plurality of pixel regions (21); and further, the array substrate (10) also comprises at least one solar cell unit (31), which, together with the thin film transistor (32), is located on a same side of the base substrate (100), and is formed in at least one of the plurality of pixel regions (21) and the peripheral region (101).

Abstract translation: 提供阵列基板，其制造方法和有机发光二极管显示装置; 所述阵列基板（10）包括基底（100），所述基底基板（100）包括显示区域（102）和围绕所述显示区域（102）的外围区域（101），所述显示区域（102）包括： 多个数据线（12）和多条相互交叉的栅极线（11），由矩阵形成并由多条数据线（12）定义的多个像素区域（21） 形成在基板（100）上的彼此相交的栅极线（11），其中在所述多个像素区域（21）的每一个中形成薄膜晶体管（32）。 此外，阵列基板（10）还包括至少一个与薄膜晶体管（32）一起位于基底（100）的同一侧上的太阳能电池单元（31），并形成 在多个像素区域（21）和外围区域（101）中的至少一个中。

公开(公告)号：US10790341B2

公开(公告)日：2020-09-29

申请号：US14914350

申请日：2015-11-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yidong Guo ,  Chunping Long

IPC: H01L27/32 ,  H01L31/18 ,  H01L31/068 ,  H01L27/142 ,  H01L51/00

Abstract: An array substrate, a fabrication method thereof, and an organic light-emitting diode display device are provided; the array substrate (10) comprises a base substrate (100), the base substrate (100) including a display region (102) and a peripheral region (101) surrounding the display region (102), the display region (102) including: a plurality of data lines (12) and a plurality of gate lines (11) intersecting with each other, a plurality of pixel regions (21), formed in a matrix and defined by the plurality of data lines (12) and the plurality of gate lines (11) intersecting with each other formed on the base substrate (100), wherein a thin film transistor (32) is formed in each of the plurality of pixel regions (21); and further, the array substrate (10) also comprises at least one solar cell unit (31), which, together with the thin film transistor (32), is located on a same side of the base substrate (100), and is formed in at least one of the plurality of pixel regions (21) and the peripheral region (101).

公开(公告)号：US20180217421A1

公开(公告)日：2018-08-02

申请号：US15322547

申请日：2016-05-23

Applicant: Boe Technology Group Co., Ltd.

Inventor： Shantao Chen ,  Huijuan Zhang ,  Yidong Guo

IPC: G02F1/1337 ,  G02F1/1368 ,  G02F1/1333 ,  H01L27/12

CPC classification number: G02F1/1337 ,  G02F1/133371 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2201/123 ,  H01L27/1214 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

Abstract: Embodiments of the present disclosure provide a display substrate and manufacturing method thereof and a display device. The method of manufacturing the display substrate comprises: forming a pattern including an active layer on a base substrate using an amorphous silicon material, the active layer including at least one step region having a film thickness greater than a film thickness of other regions of the active layer; crystallizing the amorphous silicon material in the active layer into a polysilicon material.