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1.发明申请THIN FILM TRANSISTOR, AMORPHOUS SILICON FLAT DETECTION SUBSTRATE AND MANUFACTURING METHOD 有权薄膜晶体管，非晶硅平板检测基板和制造方法公开(公告)号：US20150340511A1
公开(公告)日：2015-11-26
申请号：US14354204
申请日：2013-06-20
发明人： Changjiang YAN , Jun LONG , Zongmin TIAN , Zhenyu XIE , Xu CHEN
IPC分类号： H01L29/786 , H01L27/146 , H01L29/66
CPC分类号： H01L29/78618 , H01L27/1225 , H01L27/14623 , H01L27/14663 , H01L29/66969 , H01L29/78693
摘要： A thin film transistor, an amorphous silicon flat detection substrate and a manufacturing method are provided. The material for a source electrode and a drain electrode of the thin film transistor is a conductor converted from the material for the amorphous metal oxide active layer by depositing an insulating substance containing hydrogen ions not less than a preset value, which reduces the valence band level difference between the source and the drain electrodes and the active layer, realizes good lattice matching and improves electricity characteristics of the thin film transistor.
摘要翻译： 提供薄膜晶体管，非晶硅平板检测基板和制造方法。 用于薄膜晶体管的源电极和漏电极的材料是通过沉积含有不低于预设值的氢离子的绝缘物质而从非晶金属氧化物有源层的材料转换的导体，其降低了价带水平 源电极和漏电极和有源层之间的差异实现了良好的晶格匹配并且改善了薄膜晶体管的电特性。
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2.发明申请COLOR FILTER SUBSTRATE, DISPLAY DEVICE AND METHOD FOR MANUFACTURING A COLOR FILTER SUBSTRATE 有权彩色滤光片基板，显示装置及制造彩色滤光片基板的方法公开(公告)号：US20150276999A1
公开(公告)日：2015-10-01
申请号：US14488075
申请日：2014-09-16
发明人： Jing LI , Changjiang YAN , Wenyu ZHANG
CPC分类号： G02B5/201 , G02B26/026
摘要： The present invention relates to the field of displays and discloses a color filter substrate, a display device and a method for manufacturing a color filter substrate. The color filter substrate comprises: a transparent substrate; a light-electricity converting module, provided on the transparent substrate and configured to convert a light beam incident from the transparent substrate into electric energy. The display device comprises the color filter substrate. In the invention, a light-electricity converting module is set on a transparent substrate, thus a light beam incident from the transparent substrate may be converted into electric energy, so that the sunlight transmitted into a display panel may be transformed into electric energy; because the solar energy is abundant, it may meet the demand of the display panel, and the service time of the display panel may be prolonged.
摘要翻译： 显示器技术领域本发明涉及显示器领域，并公开了一种滤色器基板，显示装置及其制造方法。 滤色器基板包括：透明基板; 光电转换模块，设置在所述透明基板上并且被配置为将从所述透明基板入射的光束转换为电能。 显示装置包括滤色器基板。 在本发明中，将光电转换模块设置在透明基板上，从而可以将从透明基板入射的光束转换成电能，从而将透射到显示面板的太阳光转换为电能; 因为太阳能充足，所以可以满足显示面板的需要，可延长显示面板的使用时间。
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3.发明申请公开(公告)号：US20170287950A1
公开(公告)日：2017-10-05
申请号：US15625436
申请日：2017-06-16
发明人： Zhenyu XIE , Shaoying XU , Tiansheng LI , Changjiang YAN , Jing LI , Zongmin TIAN
IPC分类号： H01L27/12 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1248 , H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.
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公开(公告)号：US20160247835A1
公开(公告)日：2016-08-25
申请号：US14769658
申请日：2014-10-24
发明人： Xiaohui JIANG , Changjiang YAN , Jiaxiang ZHANG
IPC分类号： H01L27/12 , H01L21/768 , H01L21/311
CPC分类号： H01L27/1248 , H01L21/31116 , H01L21/31138 , H01L21/76816 , H01L21/77 , H01L27/12 , H01L27/1244 , H01L27/1262 , Y02P80/30
摘要： An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises: a base substrate (1), thin-film transistors (TFTs), an isolation layer (10) and an organic resin layer (8) formed on the base substrate (1), and a common electrode layer (12) formed on the organic resin layer (8). The isolation layer (10) covers source electrodes (6) and drain electrodes (7) of the TFTs; the organic resin layer (8) covers the isolation layer (10) and is provided with first through holes (9) corresponding to the drain electrodes (7) of the TFTs; the isolation layer (10) is provided with second through holes (11) communicated with the first through holes (9) to expose partial drain electrodes (7); and the dimension of the second through holes (11) is greater than that of the first through holes (9). The array substrate, the manufacturing method thereof and the display device resolve the problem of forming dark dots, ensure the product quality, reduce the waste of production materials, and reduce the production cost.
摘要翻译： 公开了阵列基板，其制造方法和显示装置。 阵列基板包括：基底（1），薄膜晶体管（TFT），隔离层（10）和形成在基底基板（1）上的有机树脂层（8），以及公共电极层 ）形成在有机树脂层（8）上。 隔离层（10）覆盖TFT的源电极（6）和漏极（7）; 有机树脂层（8）覆盖隔离层（10）并且设置有与TFT的漏电极（7）对应的第一通孔（9） 所述隔离层（10）设置有与所述第一通孔（9）连通以暴露部分漏电极（7）的第二通孔（11）。 并且第二通孔（11）的尺寸大于第一通孔（9）的尺寸。 阵列基板及其制造方法和显示装置解决形成暗点的问题，确保产品质量，减少生产材料的浪费，降低生产成本。
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5.发明申请公开(公告)号：US20160254290A1
公开(公告)日：2016-09-01
申请号：US14443777
申请日：2014-10-28
发明人： Jiaxiang ZHANG , Xiaohui JIANG , Changjiang YAN
IPC分类号： H01L27/12
CPC分类号： H01L27/1248 , H01L21/77 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1262 , H01L27/1274 , H01L29/41733 , H01L29/42384 , H01L29/78633 , H01L29/78645
摘要： The present invention provides a low-temperature polysilicon thin film transistor array substrate and a method of fabricating the same, and a display device. The array substrate comprises: a substrate; a polysilicon active layer provided on the substrate; a first insulation layer provided on the active layer; a plurality of gates and a gate line provided on the first insulation layer; a second insulation layer provided on the gates; a source, a drain, a data line and a pixel electrode electrically connected with the drain, which are provided on the second insulation layer, the source covers the plurality of gates. The plurality of gates are provided directly below the source, so that the leakage current is reduced and the aperture ratio of panel is improved.
摘要翻译： 本发明提供一种低温多晶硅薄膜晶体管阵列基板及其制造方法以及显示装置。 阵列基板包括：基板; 设置在所述基板上的多晶硅有源层; 设置在所述有源层上的第一绝缘层; 设置在所述第一绝缘层上的多个栅极和栅极线; 设在门上的第二绝缘层; 源极，漏极，数据线和与漏极电连接的像素电极，其设置在第二绝缘层上，源极覆盖多个栅极。 多个栅极设置在源极的正下方，从而降低漏电流，提高面板的开口率。
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6.发明申请ARRAY SUBSTRATE, DISPLAY DEVICE AND MANUFACTURING METHOD OF THE ARRAY SUBSTRATE 有权阵列基板，显示装置和阵列基板的制造方法公开(公告)号：US20160211277A1
公开(公告)日：2016-07-21
申请号：US14386651
申请日：2013-12-03
发明人： Changjiang YAN , Jiaxiang ZHANG , Jian GUO , Zhenyu XIE , Xu CHEN
IPC分类号： H01L27/12 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L29/66765 , H01L29/78669
摘要： An array substrate, a display device and a manufacturing method of the array substrate. The array substrate includes: a base substrate (1) and a plurality of pixel units located on the base substrate (1), each of the pixel units including a thin film transistor unit. The thin film transistor unit includes: a gate electrode located on the base substrate (1), a gate insulating layer (3) located on the gate electrode, an active layer (4) located on the gate insulating layer (3) and opposed to the gate electrode in position, an ohmic layer (5) located on the active layer (4), a source electrode (6a) and a drain electrode (6b) that are located on the ohmic layer (5) and a resin passivation layer (8) that are located on the source electrode (6a) and the drain electrode (6b) and covers the substrate.
摘要翻译： 阵列基板，显示装置以及阵列基板的制造方法。 阵列基板包括：基底基板（1）和位于基底基板（1）上的多个像素单元，每个像素单元包括薄膜晶体管单元。 所述薄膜晶体管单元包括：位于所述基底基板（1）上的栅极电极，位于所述栅电极上的栅极绝缘层（3），位于所述栅极绝缘层（3）上的有源层（4） 位于位置的栅电极，位于有源层（4）上的欧姆层（5），位于欧姆层（5）上的源极（6a）和漏电极（6b）和树脂钝化层 8），其位于源电极（6a）和漏电极（6b）上并覆盖基板。
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7.发明申请THIN FILM TRANSISTOR ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE 审中-公开薄膜晶体管阵列基板，其制造方法和显示装置公开(公告)号：US20150311224A1
公开(公告)日：2015-10-29
申请号：US14421279
申请日：2014-04-28
发明人： Jiaxiang ZHANG , Jian GUO , Xiaohui JIANG , Changjiang YAN
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , G02F1/133555 , G02F1/134363 , G02F2001/134318 , H01L21/84 , H01L27/12 , H01L27/1262
摘要： Disclosed are a TFT array substrate, a method for fabricating the same and a display device. The TFT array substrate includes a plurality of pixel units, each of the plurality of pixel units includes a common electrode (9). The common electrode (9), is comb-shaped, and includes a plurality of strip electrodes and a plurality of slits. Each of the strip electrodes is configured for reflecting light incident on the strip electrode, and each of the slits is configured for transmitting light incident on the slit. As the comb-shaped common electrode with both a reflective region and a transmissive region is formed through a single patterning process, the fabrication process is simplified and the fabrication cost and difficulty are reduced.
摘要翻译： 公开了TFT阵列基板，其制造方法和显示装置。 TFT阵列基板包括多个像素单元，多个像素单元中的每一个包括公共电极（9）。 公共电极（9）是梳形的，并且包括多个条状电极和多个狭缝。 每个带状电极被配置为反射入射在带状电极上的光，并且每个狭缝被配置为透射入射在狭缝上的光。 由于通过单个图案化工艺形成具有反射区域和透射区域的梳状公共电极，因此简化了制造工艺，并且降低了制造成本和难度。
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