公开(公告)号：US08234909B2

公开(公告)日：2012-08-07

申请号：US12548057

申请日：2009-08-26

申请人： Balram Suman ,  Srinivasa Rao Vaddiraju ,  Wei Xu

发明人： Balram Suman ,  Srinivasa Rao Vaddiraju ,  Wei Xu

IPC分类号： G01N15/08

CPC分类号： G01M3/38 ,  B01D46/2418 ,  B01D46/42 ,  G01N15/082 ,  G01N21/95692

摘要： Methods are disclosed for inspecting a cylindrical porous ceramic body by positioning a diffuser near, and spaced apart from, the first end of a ceramic body; flowing a tracer flow toward the diffuser, wherein a first portion of the tracer flow passes through the diffuser, and a second portion of the tracer flow does not pass through the diffuser, the first and second portions of the tracer flow then entering the first end of the ceramic body, wherein the average velocity of the first portion of the tracer flow entering the ceramic body VAVG1 is lower than the average velocity of the second portion of the tracer flow entering the ceramic body VAVG2; directing light toward the second end of the ceramic body; and detecting reflected light coming from a location proximate the second transverse face at the second end of the ceramic body.

摘要翻译： 公开了用于通过将陶瓷体的第一端附近和间隔开设置扩散器来检查圆柱形多孔陶瓷体的方法; 使示踪剂流向扩散器流动，其中示踪剂流的第一部分通过扩散器，并且示踪剂流的第二部分不通过扩散器，示踪剂流的第一和第二部分然后进入第一端 其中进入陶瓷体VAVG1的示踪剂流的第一部分的平均速度低于进入陶瓷体VAVG2的示踪剂流的第二部分的平均速度; 将光引向陶瓷体的第二端; 以及检测来自陶瓷体的第二端处靠近第二横向面的位置的反射光。

公开(公告)号：US20110048109A1

公开(公告)日：2011-03-03

申请号：US12548057

申请日：2009-08-26

申请人： Balram Suman ,  Srinivasa Rao Vaddiraju ,  Wei Xu

发明人： Balram Suman ,  Srinivasa Rao Vaddiraju ,  Wei Xu

IPC分类号： G01N15/08 ,  G01M3/02

CPC分类号： G01M3/38 ,  B01D46/2418 ,  B01D46/42 ,  G01N15/082 ,  G01N21/95692

摘要： Methods are disclosed for inspecting a cylindrical porous ceramic body by positioning a diffuser near, and spaced apart from, the first end of a ceramic body; flowing a tracer flow toward the diffuser, wherein a first portion of the tracer flow passes through the diffuser, and a second portion of the tracer flow does not pass through the diffuser, the first and second portions of the tracer flow then entering the first end of the ceramic body, wherein the average velocity of the first portion of the tracer flow entering the ceramic body VAVG1 is lower than the average velocity of the second portion of the tracer flow entering the ceramic body VAVG2; directing light toward the second end of the ceramic body; and detecting reflected light coming from a location proximate the second transverse face at the second end of the ceramic body.

摘要翻译： 公开了用于通过将陶瓷体的第一端附近和间隔开设置扩散器来检查圆柱形多孔陶瓷体的方法; 使示踪剂流朝向扩散器流动，其中示踪剂流的第一部分通过扩散器，并且示踪剂流的第二部分不通过扩散器，示踪剂流的第一和第二部分然后进入第一端 其中进入陶瓷体VAVG1的示踪剂流的第一部分的平均速度低于进入陶瓷体VAVG2的示踪剂流的第二部分的平均速度; 将光引向陶瓷体的第二端; 以及检测来自陶瓷体的第二端处靠近第二横向面的位置的反射光。

公开(公告)号：US08591795B2

公开(公告)日：2013-11-26

申请号：US12631054

申请日：2009-12-04

申请人： Prantik Mazumder ,  Balram Suman

发明人： Prantik Mazumder ,  Balram Suman

IPC分类号： C30B28/04

CPC分类号： C30B15/007 ,  C30B11/00 ,  C30B19/062 ,  C30B29/06

摘要： A method of making an article of a semiconducting material involves selecting a target thickness for the article and then submerging a mold into a molten semiconducting material for a submersion time effective to form a solid layer of semiconducting material over an external surface of the mold where the thickness of the solid layer is substantially equal to the target thickness. The submersion time is selected to be substantially equal to a transition time, which is determined from a plot of solid layer thickness versus submersion time for a mold having particular attributes, including mold composition, mold thickness and initial mold temperature. The transition time, and thus the submersion time, corresponds to a maximum in solid layer thickness in the solid layer thickness versus submersion time curve for the particular mold.

摘要翻译： 制造半导体材料制品的方法包括选择制品的目标厚度，然后将模具浸入熔融半导体材料中以便浸入时间有效地在模具的外表面上形成半导体材料的固体层，其中 固体层的厚度基本上等于目标厚度。 浸入时间被选择为基本上等于转变时间，其从具有特定属性的模具的实心层厚度对浸没时间的图确定，包括模具成分，模具厚度和初始模具温度。 过渡时间，从而浸没时间对应于固体层厚度对于特定模具的固体层厚度与浸没时间曲线的最大值。

公开(公告)号：US20120129293A1

公开(公告)日：2012-05-24

申请号：US13300829

申请日：2011-11-21

申请人： Sergey Potapenko ,  Balram Suman ,  Lili Tian ,  Alex Usenko

发明人： Sergey Potapenko ,  Balram Suman ,  Lili Tian ,  Alex Usenko

IPC分类号： H01L31/18 ,  H01L21/22

CPC分类号： C30B11/002 ,  C30B29/06 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： The invention relates to methods of making unsupported articles of semiconducting material using thermally active molds having an external surface temperature, Tsurface, and a core temperature, Tcore, whererin Tsurface>Tcore.

摘要翻译： 本发明涉及使用具有外表面温度Tsurface和核心温度Tcore，其中T表面> Tcore的热活性模具制造无支撑物品的半导体材料的方法。

公开(公告)号：US08480803B2

公开(公告)日：2013-07-09

申请号：US12609987

申请日：2009-10-30

申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Christopher Scott Thomas

发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Christopher Scott Thomas

IPC分类号： C30B11/14

CPC分类号： C30B15/007 ,  C30B19/062 ,  C30B29/06

摘要： A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal.

摘要翻译： 制造半导体材料的方法包括从熔融半导体材料的熔体中取出已经在模具的外表面上形成半导体材料的固体层的固体模具。 在退出动作期间，控制一个或多个温度，力和相对退出速率，以便在退出期间在固体层上形成的半导体材料的固体覆层中实现一个或多个期望属性 。

公开(公告)号：US08242033B2

公开(公告)日：2012-08-14

申请号：US12632837

申请日：2009-12-08

申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Natesan Venkataraman

发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Natesan Venkataraman

IPC分类号： H01L21/00

CPC分类号： C30B29/64 ,  C30B11/003 ,  C30B29/02 ,  C30B29/06 ,  C30B29/08 ,  C30B29/16 ,  C30B29/42 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02667 ,  H01L31/182 ,  H01L31/1872 ,  Y02E10/546 ,  Y02P70/521

摘要： Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed.

摘要翻译： 公开了制备和/或处理半导体材料制品的方法。 在各种方法中，提供了半导体材料的第一制品，第一半导体材料被充分加热以熔化半导体材料，并且熔化的半导体材料在基本平行于熔融半导体制品的最短尺寸的方向上固化 材料。 还公开了通过本文所述方法制备的半导体材料制品。

公开(公告)号：US20110135902A1

公开(公告)日：2011-06-09

申请号：US12631054

申请日：2009-12-04

申请人： Prantik Mazumder ,  Balram Suman

发明人： Prantik Mazumder ,  Balram Suman

IPC分类号： B28B1/30

CPC分类号： C30B15/007 ,  C30B11/00 ,  C30B19/062 ,  C30B29/06

摘要： A method of making an article of a semiconducting material involves selecting a target thickness for the article and then submerging a mold into a molten semiconducting material for a submersion time effective to form a solid layer of semiconducting material over an external surface of the mold where the thickness of the solid layer is substantially equal to the target thickness. The submersion time is selected to be substantially equal to a transition time, which is determined from a plot of solid layer thickness versus submersion time for a mold having particular attributes, including mold composition, mold thickness and initial mold temperature. The transition time, and thus the submersion time, corresponds to a maximum in solid layer thickness in the solid layer thickness versus submersion time curve for the particular mold.

摘要翻译： 制造半导体材料制品的方法包括选择制品的目标厚度，然后将模具浸入熔融半导体材料中以便浸入时间有效地在模具的外表面上形成半导体材料的固体层，其中 固体层的厚度基本上等于目标厚度。 浸入时间被选择为基本上等于转变时间，其从具有特定属性的模具的实心层厚度对浸没时间的图确定，包括模具成分，模具厚度和初始模具温度。 过渡时间，从而浸没时间对应于固体层厚度对于特定模具的固体层厚度与浸没时间曲线的最大值。

公开(公告)号：US20130052802A1

公开(公告)日：2013-02-28

申请号：US13214366

申请日：2011-08-22

申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman

发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman

IPC分类号： H01L21/20 ,  B29C33/38

CPC分类号： C30B29/06 ,  C30B11/002 ,  C30B15/007 ,  C30B19/12

摘要： The disclosure relates to substrate molds with variable thermal mass. The disclosure relates to substrate molds comprising refractory materials having a leading edge and a trailing edge, wherein the substrate mold has a graded thermal mass comprising a leading edge thermal mass (Mt(lead)) and a trailing edge thermal mass (Mt(trail)), wherein Mt(lead) is less than Mt(trail). The disclosure also relates to methods of making articles of semiconducting material and methods of minimizing total thickness variation in articles of semiconducting material, said methods comprising using the molds disclosed.

摘要翻译： 本公开涉及具有可变热质量的基底模具。 本公开涉及包括具有前缘和后缘的耐火材料的基底模具，其中所述基底模具具有包括前缘热质（Mt（铅））和后缘热质（Mt（线））的分级热质， ），其中Mt（铅）小于Mt（trail）。 本公开还涉及制造半导体材料的方法和使半导体材料制品中的总厚度变化最小化的方法，所述方法包括使用所公开的模具。

公开(公告)号：US20130011319A1

公开(公告)日：2013-01-10

申请号：US13176804

申请日：2011-07-06

申请人： Lewis A. Bernstein ,  Dana Craig Bookbinder ,  Jason A. Dillard ,  Jennifer L. Porter ,  Balram Suman ,  Pushkar Tandon

发明人： Lewis A. Bernstein ,  Dana Craig Bookbinder ,  Jason A. Dillard ,  Jennifer L. Porter ,  Balram Suman ,  Pushkar Tandon

IPC分类号： C01B33/12 ,  B01J19/00

CPC分类号： C01B33/183 ,  B01J12/00 ,  C03B37/01413 ,  C03B2207/42 ,  C03B2207/46

摘要： An apparatus for mixing a vaporized precursor with a gas for producing silica particles is provided. The apparatus includes a mixer housing, a precursor delivery chamber having an output in communication with the mixer housing for delivering a vaporized precursor in the mixer housing, and an oxidizing gas delivery chamber having an output in communication with the mixer housing for delivering an oxidizing gas to be mixed with the vaporized precursor. The apparatus further includes a flashback member disposed within the mixer housing and between the output of the precursor delivery chamber and the output of the oxidizing gas delivery chamber. The flashback member is located at a minimum distance from the output of the oxidizing gas delivery chamber defined by Lminimum (cm)=0.453 U (Re)−0.5567, wherein U is the flow rate in cm/sec of precursor and Re is the flow Reynolds number. The flashback member may include a tapered surface on at least one side to reduce recirculation of vaporized gas.

摘要翻译： 提供了一种用于混合蒸发的前体与用于生产二氧化硅颗粒的气体的装置。 该装置包括混合器壳体，前体输送室，其具有与混合器壳体连通的输出，用于将混合器壳体内的蒸发前体输送;以及氧化气体输送室，具有与混合器壳体连通的输出，用于输送氧化气体 与蒸发的前体混合。 该装置还包括设置在混合器壳体内并且在前体输送室的输出和氧化气体输送室的输出之间的回火构件。 回闪构件位于距离最小（cm）= 0.453U（Re）-0.5567所限定的氧化气体输送室的输出的最小距离处，其中U是前体的流速（cm / sec），Re是流量 雷诺数。 闪回构件可以在至少一侧上包括锥形表面以减少气化气体的再循环。

公开(公告)号：US20120027996A1

公开(公告)日：2012-02-02

申请号：US12844305

申请日：2010-07-27

申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman

发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman

IPC分类号： B29C41/14

CPC分类号： H01L31/182 ,  C30B15/007 ,  C30B15/06 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T428/24479

摘要： A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold.

摘要翻译： 制造半导体材料的固体层的方法包括选择具有前缘厚度和不同后缘厚度的模具，使得在固体层厚度相对于有效浸入时间的各个图中，将浸入前缘和后缘的熔融半导体 与前缘和后缘相邻的固体层的厚度基本相等。 模具浸入熔融半导体材料中并从熔融半导体材料中取出，以在模具的外表面上形成半导体材料的固体层。