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11 条记录 (耗时 0.02 秒)

    Pixel device
    1.
    发明授权
    Pixel device 有权
    像素设备

    公开(公告)号：US07245285B2

    公开(公告)日：2007-07-17

    申请号：US10833121

    申请日：2004-04-28

    申请人： Bao-Sung Bruce Yeh ,  James Richard Przybyla ,  Michael John Regan

    发明人： Bao-Sung Bruce Yeh ,  James Richard Przybyla ,  Michael John Regan

    IPC分类号： G09G3/34 ,  G09G3/38 ,  G02B26/02

    CPC分类号： G09G3/3466 ,  G02B26/001

    摘要： A pixel device, comprising; a first plate, a second plate disposed under the first plate, and a third plate disposed under the second plate; a first power supply for providing a first voltage to the first plate; a second power supply for providing a second voltage to the second plate; and a third power supply for providing a third voltage to the third plate.

    摘要翻译： 一种像素装置，包括： 第一板，设置在第一板下方的第二板和设置在第二板下方的第三板; 用于向所述第一板提供第一电压的第一电源; 用于向所述第二板提供第二电压的第二电源; 以及用于向第三板提供第三电压的第三电源。

    LDMOS and CMOS integrated circuit and method of making
    4.
    发明授权
    LDMOS and CMOS integrated circuit and method of making 失效
    LDMOS和CMOS集成电路及其制作方法

    公开(公告)号：US06902258B2

    公开(公告)日：2005-06-07

    申请号：US10954065

    申请日：2004-09-28

    申请人： Zhizang Chen ,  Bao-Sung Bruce Yeh ,  S. Jonathan Wang ,  Cathy P. Peltier

    发明人： Zhizang Chen ,  Bao-Sung Bruce Yeh ,  S. Jonathan Wang ,  Cathy P. Peltier

    IPC分类号： H01L21/8238 ,  B41J2/05 ,  H01L21/00 ,  H01L23/48

    CPC分类号： H01L21/823892 ,  H01L21/823807 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (Vt) implant.

    摘要翻译： 在基板上形成集成电路（IC）。 IC具有第一阱，其具有包括第二导电低压晶体管的第一掺杂剂浓度。 IC还具有掺杂浓度等于包括第一导电高压晶体管的第一掺杂剂浓度的第二阱。 此外，IC具有第三阱，其具有与包括第一导电低压晶体管的第一阱相反类型的第二掺杂剂浓度。 产生第一导电低压晶体管和第二导电低电压晶体管，而没有阈值电压（V OUT）。

    LDMOS and CMOS integrated circuit and method of making
    6.
    发明申请
    LDMOS and CMOS integrated circuit and method of making 失效
    LDMOS和CMOS集成电路及其制作方法

    公开(公告)号：US20050041070A1

    公开(公告)日：2005-02-24

    申请号：US10954065

    申请日：2004-09-28

    申请人： Zhizang Chen ,  Bao-Sung Bruce Yeh ,  S. Jonathan Wang ,  Cathy Peltier

    发明人： Zhizang Chen ,  Bao-Sung Bruce Yeh ,  S. Jonathan Wang ,  Cathy Peltier

    IPC分类号： H01L21/8238 ,  B41J2/05

    CPC分类号： H01L21/823892 ,  H01L21/823807 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (Vt) implant.

    摘要翻译： 在基板上形成集成电路（IC）。 IC具有第一阱，其具有包括第二导电低压晶体管的第一掺杂剂浓度。 IC还具有掺杂浓度等于包括第一导电高压晶体管的第一掺杂剂浓度的第二阱。 此外，IC具有第三阱，其具有与包括第一导电低压晶体管的第一阱相反类型的第二掺杂剂浓度。 产生第一导电低压晶体管和第二导电低压晶体管，而没有阈值电压（Vt）植入。

    LDMOS and CMOS integrated circuit and method of making
    7.
    发明授权
    LDMOS and CMOS integrated circuit and method of making 失效
    LDMOS和CMOS集成电路及其制作方法

    公开(公告)号：US06818494B1

    公开(公告)日：2004-11-16

    申请号：US09817703

    申请日：2001-03-26

    申请人： Zhizang Chen ,  Bao-Sung Bruce Yeh ,  S. Jonathan Wang ,  Cathy P. Peltier

    发明人： Zhizang Chen ,  Bao-Sung Bruce Yeh ,  S. Jonathan Wang ,  Cathy P. Peltier

    IPC分类号： H01L218238

    CPC分类号： H01L21/823892 ,  H01L21/823807 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (Vt) implant.

    摘要翻译： 在基板上形成集成电路（IC）。 IC具有第一阱，其具有包括第二导电低压晶体管的第一掺杂剂浓度。 IC还具有掺杂浓度等于包括第一导电高压晶体管的第一掺杂剂浓度的第二阱。 此外，IC具有第三阱，其具有与包括第一导电低压晶体管的第一阱相反类型的第二掺杂剂浓度。 产生第一导电低压晶体管和第二导电低压晶体管，而没有阈值电压（Vt）植入。